FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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March 2013
FDPF7N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 5 A, 1.5
Features
• RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A
• Low Gate Charge (Typ.12.8 nC)
• Low Crss (Typ. 9 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
G
DS
TO-220
Absolute Maximum Ratings
GDS
G
TO-220F
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FDPF7N50U
500
5*
3.0 *
20 *
30
125
5
8.9
20
31.3
0.25
-55 to +150
300
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDPF7N50U
4.0
62.5
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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Package Marking and Ordering Information
Device Marking
FDPF7N50U
Device
FDPF7N50U
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250A
ID = 250A, Referenced to 25C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250A
VGS = 10V, ID = 2.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.5A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 5A
RG = 25
VDS = 400V, ID = 5A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 5A
dIF/dt =100A/s
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
1.2
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
40
0.04
Max Unit
--
--
25
250
100
-100
V
V/C
A
A
nA
nA
5.0 V
1.5
-- S
940 pF
190 pF
13.5 pF
20
120
60
80
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
5A
20 A
1.6 V
-- ns
-- C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
2
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS
Top : 10.0 V
8.0V
7.5 V
15
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
5
* Notes :
1. 250s Pulse Test
2. TC = 25oC
0
0 10 20 30 40 50
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0.0
0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
5 10 15
ID, Drain Current [A]
20
Figure 5. Capacitance Characteristics
1000
100
10
100
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
100
25oC
10-1
10-2
2
* Note :
1. VDS = 40V
2. 250s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
101
100
10-1
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 57 A
0
0 5 10 15
QG, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
3
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Drain Current
Vs. Case Temperature
1.2 6
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
- FDPF7N50U
4
2
0
25 50 75 100 125 150
TC, Case Temperature [oC]
101
100
Operation in This Area
is Limited by R DS(on)
10 us
100 us
1 ms
10 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 10. Transient Thermal Response Curve
D =0.5
100 0.2
0.1
0.05
1 0 -1
0.02
0.01
1 0 -2
1 0 -5
single pulse
PDM
* N otes :
t1
t2
1. ZJC(t) = 4.0 oC /W M ax.
2. D uty Factor, D =t1/t2
3. T - T = P * Z (t)
JM C
DM JC
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q uare W ave P ulse D uration [sec]
101
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
4
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
5
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
6
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N-Channel MOSFET

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Mechanical Dimensions
TO-220M03
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
7
Dimensions in Millimeters
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FDPF7N50U (Fairchild Semiconductor)
N-Channel MOSFET

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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
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