MJ2955 (ON Semiconductor)
Complementary Silicon Power Transistors

No Preview Available !

Click to Download PDF File for PC

2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
general−purpose switching and amplifier applications.
Features
DC Current Gain − hFE = 20−70 @ IC = 4 Adc
Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCER
VCB
VEB
IC
IB
PD
60
70
100
7
15
7
115
0.657
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +200 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
1
http://onsemi.com
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
xxxx55G
AYYWW
MEX
xxxx55
G
A
YY
WW
MEX
= Device Code
xxxx = 2N30 or MJ20
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
ORDERING INFORMATION
Device
2N3055
2N3055G
MJ2955
Package
TO−204AA
TO−204AA
(Pb−Free)
TO−204AA
Shipping
100 Units / Tray
100 Units / Tray
100 Units / Tray
MJ2955G
TO−204AA
(Pb−Free)
100 Units / Tray
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N3055/D


MJ2955 (ON Semiconductor)
Complementary Silicon Power Transistors

No Preview Available !

Click to Download PDF File for PC

2N3055(NPN), MJ2955(PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Thermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC= 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
RqJC
Max Unit
1.52 _C/W
Symbol
Min Max Unit
OFF CHARACTERISTICS*
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
− Vdc
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS*(Note1)
VCER(sus)
70
− Vdc
ICEO
ICEX
− 0.7 mAdc
mAdc
− 1.0
− 5.0
IEBO
− 5.0 mAdc
DC Current Gain
hFE
(IC = 4.0 Adc, VCE = 4.0 Vdc)
20 70
(IC = 10 Adc, VCE = 4.0 Vdc)
5.0 −
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
− 1.1
3.0
Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
VBE(on)
Is/b
fT
hfe
fhfe
− 1.5 Vdc
2.87 − Adc
2.5 − MHz
15 120
10 − kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
20
50 ms
10 dc 1 ms
6
4
500 ms
2 250 ms
1
0.6 BONDING WIRE LIMIT
0.4 THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
6 10
20
40 60
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
http://onsemi.com
2


MJ2955 (ON Semiconductor)
Complementary Silicon Power Transistors

No Preview Available !

Click to Download PDF File for PC

2N3055(NPN), MJ2955(PNP)
500
300 TJ = 150°C
200
25°C
100
70 −55 °C
50
30
20
VCE = 4.0 V
10
7.0
5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain, 2N3055 (NPN)
200
100 25°C
70 −55 °C
50
30
20
TJ = 150°C
VCE = 4.0 V
10
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 4. DC Current Gain, MJ2955 (PNP)
2.0
1.6
IC = 1.0 A
1.2
4.0 A
TJ = 25°C
8.0 A
2.0
TJ = 25°C
1.6
IC = 1.0 A
4.0 A 8.0 A
1.2
0.8 0.8
0.4 0.4
0
5.0 10 20
50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region,
2N3055 (NPN)
0
5.0 10 20
50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA)
Figure 6. Collector Saturation Region,
MJ2955 (PNP)
1.4
TJ = 25°C
1.2
1.0
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 4.0 V
0.4
0.2
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
Figure 7. “On” Voltages, 2N3055 (NPN)
2.0
TJ = 25°C
1.6
1.2 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.8
0.4
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltages, MJ2955 (PNP)
http://onsemi.com
3


MJ2955 (ON Semiconductor)
Complementary Silicon Power Transistors

No Preview Available !

Click to Download PDF File for PC

2N3055(NPN), MJ2955(PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
E
V
H
A
N
C
−T−
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
2
1
−Y−
GB
−Q−
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B −−− 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N −−− 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
−−− 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
−−− 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
2N3055/D




MJ2955.pdf
Click to Download PDF File