STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
P-CHANNEL 20V - 0.06- 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
20 V < 0.07
SCHOTTKY
IF(AV)
VRRM
3 A 40 V
ID
4A
VF(MAX)
0.44 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
EAS (1) Single Pulse Avalanche Energy
Value
20
20
± 20
4
3.4
16
2
20
Unit
V
V
V
A
A
A
W
mJ
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V
Value
Unit
40 V
10 A
TL = 120°C
δ = 0.5
3
A
tp = 10 ms
Sinusoidal
75
A
tp = 2 µs
F = 1 kHz
1
A
10000
V/µs
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
February 2001
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY
Tstg Storage Temperature Range
Tl Junction Temperature
(*) Mounted on FR-4 board (Steady State)
62.5
100
-55 to 150
150
°C/W
°C/W
°C
°C
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1 µA
10 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5 A
VGS = 4.5V, ID = 2.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
16
Typ.
1.6
0.06
0.07
Max.
2.5
0.07
0.085
Unit
V
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
5
1350
490
130
Max.
Unit
S
pF
pF
pF
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15V, ID = 3A RG = 4.7
VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 24V, ID = 6A,
VGS = 4.5 V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V, ID = 2A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
Vclamp = 24 V, ID = 6 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
Min.
Min.
Typ.
25
35
12.5
5
3
Typ.
125
30
83
40
75
Max.
16
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current
TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 1 A
TJ = 125 °C , IF = 1 A
TJ = 25 °C , IF = 2 A
TJ = 125 °C , IF = 2 A
TJ = 25 °C , IF = 3 A
TJ = 125 °C , IF = 3 A
Min.
Typ.
45
36
1.6
Max.
4
16
1.2
Unit
A
A
V
ns
nC
A
Min.
Typ.
14
8
0.37
0.28
0.41
0.34
0.4
Max.
50
18
0.42
0.32
0.46
0.39
0.5
0.44
Unit
µA
mA
V
V
V
V
V
V
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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Gate Charge vs Gate-source Voltage
Capacitance Variations
STS4DPFS2LS
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
DIM.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
1.27
3.81
MAX.
MIN.
1.75
0.25 0.003
1.65
0.85 0.025
0.48 0.013
0.25 0.007
0.5 0.010
45 (typ.)
5.0 0.188
6.2 0.228
4.0 0.14
1.27 0.015
0.6
8 (max.)
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
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STS4DPFS2LS (ST Microelectronics)
P-CHANNEL POWER MOSFET

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STS4DPFS2LS
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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