H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B1/ H11B2/ H11B3
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Isolation test voltage, 5300 VRMS
• Coupling capacitance, 0.5 pF
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
i179005
A1
C2
NC 3
6B
5C
4E
e3 Pb
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The H11B1/ H11B2/ H11B3 are industry standard
optocouplers, consisting of a gallium arsenide infra-
red LED and a silicon photodarlington.
Order Information
Part
H11B1
H11B2
H11B3
H11B1-X007
H11B1-X009
H11B2-X009
Remarks
CTR > 500 %, DIP-6
CTR > 200 %, DIP-6
CTR > 100 %, DIP-6
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
CTR > 200 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
Pdiss
Value
3.0
60
100
1.33
Unit
V
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
Test condition
Symbol
BVCEO
BVECO
BVCBO
Value
25
7.0
30
Unit
V
V
V
Document Number 83609
Rev. 1.5, 26-Oct-04
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H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B1/ H11B2/ H11B3
Vishay Semiconductors
Parameter
Collector current (continuous)
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation test voltage
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Total package dissipation (LED
plus detector)
Derate linearly from 25 °C
Storage temperature
Test condition
between emitter and detector,
refer to standard climate
23 °C/50 %RH, DIN 50014
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature
Lead soldering time at 260 °C
Symbol
IC
Pdiss
Symbol
VISO
RIO
RIO
Ptot
Tstg
Tamb
Value
100
150
2.0
Value
5300
7.0
7.0
175
1012
1011
260
3.5
- 55 to + 150
- 55 to + 100
10
Unit
mA
mW
mW/°C
Unit
VRMS
mm
mm
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reserve current
Junction capacitance
Test condition
IF = 50 mA
IF = 10 mA
VR = 3.0 V
VF = 0 V, f = 1.0 mHz
Part Symbol Min Typ. Max Unit
H11B1
VF
1.1 1.5
V
H11B2
VF
1.1 1.5
V
H11B3
VF
1.1 1.5
V
IR 10 µA
Cj 50 pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-base breakdown
voltage
Collector-emitter leakage
current
Test condition
IC = 1.0 mA, IF = 0 mA
IE = 100 µA, IF = 0 mA
IC = 100 µA, IF = 0 mA
VCE = 10 V, IF = 0 mA
Symbol
Min
Typ.
Max
Unit
BVCEO
30
V
BVECO
7.0
V
BVCBO
30
V
ICEO
100 nA
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Document Number 83609
Rev. 1.5, 26-Oct-04


H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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Coupler
Parameter
Saturation voltage collector-
emitter
Capacitance (input-output)
Test condition
IC = 1.0 mA, IC = 1.0 mA
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Test condition
VCE = 5.0 V, IF = 1.0 mA
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Symbol
Min
Typ.
Max
Unit
VCEsat
1.0 V
CIO 0.5
pF
Part Symbol Min Typ. Max Unit
H11B1 CTRDC
500
%
H11B2 CTRDC
200
%
H11B3 CTRDC
100
%
Switching Characteristics
Parameter
Switching times
Test condition
IF = 5.0 mA, VCE = 10 V, RL = 100
Symbol
ton
toff
Min
Typ.
5.0
30
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Max
Unit
µs
µs
1.4
1. 3 Ta = -55°C
1.2
1.1 Ta = 25°C
1.0
0.9
0.8
0.7
.1
ih11b1_01
Ta = 100°C
1 10
IF - Forward Current - mA
100
Figure 1. Forward Voltage vs. Forward Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
.1
Normalized to:
Vce = 5 V
IF = 1 mA
Vce = 5 V
Vce = 1 V
1 10
IF - LED Current - mA
100
ih11b1_02
Figure 2. Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Document Number 83609
Rev. 1.5, 26-Oct-04
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H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B1/ H11B2/ H11B3
Vishay Semiconductors
100
Normalized to:
Vce = 5 V
10 IF = 2 mA
1
Vce = 5 V
Vce = 1V
.1
.01
.1
ih11b1_03
1 10
IF - LED Current - mA
100
Figure 3. Normalized Non-Saturated and Saturated ICE vs. LED
Current
80
Vcc = 5V
Vth = 1.5 V
60
1.0 k
40
20
0
0
ih11b1_06
220 ıˇ
470
100
5 10 15
IF - LED Current - mA
20
Figure 6. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
10 Normalized to:
IF = 10 mA
1 Vce = 5 V
.1
Vce = 5 V
Vce = 1V
.01
.001
.1
ih11b1_04
1 10
IF - LED Current - mA
100
Figure 4. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
20
1k
15
10
100
5
Vcc = 5 V
Vth = 1.5 V
0
0
ih11b1_07
5 10 15
IF - LED Current - mA
20
Figure 7. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
10000
Vce = 5 V
8000
6000
4000
2000
Vce = 1 V
0
.01 .1 1 10 100
Ib - Base Current - µA
ih11b1_05
Figure 5. Non-Saturated and Saturated HFE vs. Base Current
IF
tD
VO tR
tPLH
tPHL
VTH = 1.5 V
tS tF
ih11b1_08
Figure 8. Switching Waveform
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Document Number 83609
Rev. 1.5, 26-Oct-04


H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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VCC = 10 V
F=10 KHz,
DF=50% RL
VO
IF =5 mA
ih11b1_09
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Figure 9. Switching Schematic
Package Dimensions in Inches (mm)
321
.248 (6.30)
.256 (6.50)
pin one ID
4 56
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
i178004
ISO Method A
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Document Number 83609
Rev. 1.5, 26-Oct-04
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H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B1/ H11B2/ H11B3
Vishay Semiconductors
Option 7
.300 (7.62)
TYP.
.028 (0.7)
MIN.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18494
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Document Number 83609
Rev. 1.5, 26-Oct-04


H11B3 (Vishay Siliconix)
(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B1/ H11B2/ H11B3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83609
Rev. 1.5, 26-Oct-04
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