2N2219 (Philips)
NPN switching transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
1997 Sep 03


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed switching
DC and VHF/UHF amplification, for 2N2219 only.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PNP complement: 2N2905 and 2N2905A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
2
MAM317
3
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2219
2N2219A
VCEO
collector-emitter voltage
2N2219
2N2219A
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
2N2219
2N2219A
toff turn-off time
CONDITIONS
MIN.
open emitter
open base
Tamb 25 °C
IC = 10 mA; VCE = 10 V
IC = 20 mA; VCE = 20 V; f = 100 MHz
75
250
300
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
MAX. UNIT
60 V
75 V
30 V
40 V
800 mA
800 mW
MHz
MHz
250 ns
1997 Sep 03
2


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N2219
2N2219A
collector-emitter voltage
2N2219
2N2219A
emitter-base voltage
2N2219
2N2219A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open base; IC 500 mA
open collector
Tamb 25 °C
Tcase 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
60 V
75 V
30 V
40 V
5V
6V
800 mA
800 mA
200 mA
800 mW
3W
65
+150
°C
200 °C
65
+150
°C
VALUE
190
50
UNIT
K/W
K/W
1997 Sep 03
3


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICBO
IEBO
hFE
hFE
hFE
hFE
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
2N2219
collector cut-off current
2N2219A
emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
2N2219A
DC current gain
DC current gain
DC current gain
2N2219
2N2219A
collector-emitter saturation voltage
2N2219
2N2219A
collector-emitter saturation voltage
2N2219
2N2219A
base-emitter saturation voltage
2N2219
2N2219A
base-emitter saturation voltage
2N2219
2N2219A
collector capacitance
emitter capacitance
2N2219A
transition frequency
2N2219
2N2219A
noise figure
2N2219A
IE = 0; VCB = 50 V
IE = 0; VCB = 50 V; Tamb = 150 °C
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tamb = 150 °C
IC = 0; VEB = 3 V
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V; Tamb = 55 °C
IC = 150 mA; VCE = 1 V; note 1
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V
IC = ic = 0; VEB = 500 mV
IC = 20 mA; VCE = 20 V; f = 100 MHz;
IC = 0.2 mA; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
MIN. MAX. UNIT
10 nA
10 µA
10 nA
10 µA
10 nA
35
50
75
35
50
100 300
30
40
400 mV
300 mV
1.6 V
1V
1.3 V
0.6 1.2 V
2.6 V
2V
8 pF
25 pF
250
300
MHz
MHz
4 dB
1997 Sep 03
4


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
SYMBOL
PARAMETER
CONDITIONS
Switching times (between 10% and 90% levels) for type 2N2219A; see Fig.2
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MIN. MAX. UNIT
35 ns
15 ns
20 ns
250 ns
200 ns
60 ns
handbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450
DUT
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .
VBB = 3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1997 Sep 03
5


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
Product specification
2N2219; 2N2219A
SOT5/11
j
B
k
A
α
1
2
3
a
D
D1
A
seating plane
w M AMBM
b
L
05
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A a b D D1 j k L w
6.60
6.35
5.08
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
α
45°
OUTLINE
VERSION
SOT5/11
1997 Sep 03
IEC
REFERENCES
JEDEC
EIAJ
TO-39
6
10 mm
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11


2N2219 (Philips)
NPN switching transistors

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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
7


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NPN switching transistors

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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
117047/00/03/pp8
Date of release: 1997 Sep 03
Document order number: 9397 750 02823




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