NTE56064 (NTE Electronics)
TRIAC / 8A / High Commutation

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NTE56063 & NTE56064
TRIAC, 8A, High Commutation
Description:
The NTE56063 and NTE56064 are glass passivated, high commutation TRIACs in an isolated full–
pack type package designed for use in motor control circuits where high static and dynamic dV/dt and
high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated
junction temperature, without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56063 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56064 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS 73°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
6A/µs.


NTE56064 (NTE Electronics)
TRIAC / 8A / High Commutation

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Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 10A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
Critical RateofRise of
OffState Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Critical RateofChange of
Commutating Current
dIcom/dt VDM = 400V, TJ = +95°C, ITRMS = 8A,
without Snubber, Gate Open
Gate Controlled TurnOn Time
Isolation Characteristics
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL f = 50 60Hz, Sinusoidal Waveform,
R.H. 65%, Clean and Dustfree
Capacitance from T2 to
External Heatsink
CISOL f = 1MHz
Min Typ Max Unit
2 18 50 mA
2 21 50 mA
2 34 50 mA
31 60 mA
34 90 mA
30 60 mA
31 60 mA
1.3 1.65 V
0.7 1.5 V
0.25 0.4
V
0.1 0.5 mA
1000 4000 V/µs
14 A/ms
2 µs
– – 2500 V
10 pF
Note 2. Device does not trigger in the MT2 (), G (+) quadrant.
.181 (4.6) Max
.114 (2.9)
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
G
.098 (2.5)
.100 (2.54)




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