NTE128P (NTE)
Silicon Complementary Transistors General Purpose Amp

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NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D High VCE Ratings
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PTOT
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
BVCEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
IC = 10mA, IB = 0
VCB = 80V
VEB = 4V
IC = 10mA, VCE = 2V
IC = 350mA, VCE = 2V
IC = 350mA
IC = 50mA
VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
80 – – V
– – 100 nA
– – 100 nA
100 – –
100 – 300
– – 0.35 V
50 – –
– – 15 pF


NTE128P (NTE)
Silicon Complementary Transistors General Purpose Amp

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.200 (5.08)
.180 (4.57)
.100 (2.54)
EBC
.180
(4.57)
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R




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