MGP4N60E (ON)
Insulated Gate Bipolar Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 60 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
Low On–Voltage 2.0 V typical at 3.0 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
C
G
E
Order this document
by MGP4N60E/D
MGP4N60E
IGBT IN TO–220
4.0 A @ 90°C
6.0 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
6.0 Adc
4.0
8.0 Apk
62.5 Watts
0.51 W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
TL
2.0
65
260
10 lbfSin (1.13 NSm)
°C/W
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncIG. 1B99T7 Device Data
1


MGP4N60E (ON)
Insulated Gate Bipolar Transistor

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MGP4N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
— mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
V(BR)ECS
15
— Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
µAdc
— — 10
— — 200
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
— — 50 mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 1.5 Adc)
(VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 3.0 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
Vdc
— 1.6 1.9
— 1.5 —
— 2.0 2.4
VGE(th)
Vdc
4.0 6.0 8.0
— 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc)
gfe — 1.8 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 342 —
— 40 —
— 3.0 —
pF
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 3.0 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 )
Energy losses include “tail”
(VCC = 360 Vdc, IC = 3.0 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 3.0 Adc,
VGE = 15 Vdc)
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
— 34 — ns
— 30 —
— 36 —
— 216 —
0.10 0.15
mJ
— 33 — ns
— 32 —
— 56 —
— 340 —
— 0.165 —
mJ
— 18.1 —
nC
— 3.8 —
— 7.8 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
LE
nH
— 7.5 —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2 Motorola IGBT Device Data


MGP4N60E (ON)
Insulated Gate Bipolar Transistor

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15
TJ = 25°C
12
20 V 17.5 V
15 V
9
12.5 V
6
VGE = 10 V
3
0
02 4 6
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
8
15
TJ = 125°C
12
MGP4N60E
20 V 17.5 V
15 V
9
12.5 V
6
VGE = 10 V
3
0
02 4 6
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8
Figure 2. Output Characteristics
15
VCE = 100 V
12.5 5 ms PULSE WIDTH
10
7.5
5.0
2.5
0
5
TJ = 125°C
25°C
79
11 13 15
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
17
800
TJ = 25°C
VGE = 0 V
600
Cies
400
Coes
200
Cres
0
0 5 10 15 20 25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
IC = 3.0 A
2.0
VGE = 15 V
80 ms PULSE WIDTH
1.8
2.0 A
1.6 1.5 A
1.4
–50 –25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
20
16
QT
12
Q1
Q2
8
TJ = 25°C
4 VCC = 300 V
IC = 3.0 A
0
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola IGBT Device Data
3


MGP4N60E (ON)
Insulated Gate Bipolar Transistor

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MGP4N60E
TJ = 125°C
VDD = 360 V
0.2 VGE = 15 V
0.1
IC = 3.0 A
2.0 A
1.0 A
0.20
VCC = 360 V
WVGE = 15 V
0.15 RG = 20
0.10
0.05
IC = 3.0 A
2.0 A
1.5 A
0
5 15 25 35 45
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
0.20
TJ = 125°C
VCC = 360 V
W0.15 VGE = 15 V
RG = 20
0.10
0.05
0
01
2
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector Current
3
0
–50 –25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 8. Turn–Off Losses versus
Junction Temperature
150
10
WTJ = 125°C
RGE = 20
VGE = 15 V
1
1 10 100 1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 10. Reverse Biased Safe
Operating Area
4 Motorola IGBT Device Data


MGP4N60E (ON)
Insulated Gate Bipolar Transistor

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PACKAGE DIMENSIONS
MGP4N60E
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
CASE 221A–09
TO–220AB
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Motorola IGBT Device Data
MGP4N605E/D




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