RM150CZ-H (Mitsubishi Electric Semiconductor)
HIGH POWER GENERAL USE INSULATED TYPE

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MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
RM150DZ/CZ/UZ-M,-H,-24,-2H
IF(AV) Average forward current .......... 150A
VRRM Repetitive peak reverse voltage
.............. 400/800/1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(DZ Type)
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3–φ6.5
4–M8
A1 K1 K2 A2
18 16
18 16
30 32 30
68.5
68.5
150
LABEL
(DZ Type)
(DZ)
A1
(CZ)
A1
(UZ)
A1
K1 K2
SR1
A2
SR2
K1 K2
SR1
A2
SR2
K1 K2
SR1
A2
SR2
(Bold line is connective bar.)
Feb.1999


RM150CZ-H (Mitsubishi Electric Semiconductor)
HIGH POWER GENERAL USE INSULATED TYPE

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MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
M
400
480
320
Voltage class
H 24
800 1200
960 1350
640 960
Symbol
IF (RMS)
IF (AV)
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=109°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M8
Mounting screw M6
— Weight
Typical value
2H
1600
1700
1280
Ratings
235
150
3500
5.1 × 104
1000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Unit
V
V
V
Unit
A
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
— Insulation resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=450A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
Limits
Typ.
Max.
30
1.35
0.22
0.1
10 — —
Unit
mA
V
°C/ W
°C/ W
M
Feb.1999


RM150CZ-H (Mitsubishi Electric Semiconductor)
HIGH POWER GENERAL USE INSULATED TYPE

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MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24.-2H
HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVE
MAXIMUM FORWARD CHARACTERISTIC
10 4
7 Tj=25°C
5
3
2
10 3
7
5
3
2
10 2
7
5
3
2
10 1
0.5 1.0 1.5 2.0
FORWARD VOLTAGE (V)
2.5
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10 0 2 3 5 710 1
0.250
0.200
0.150
0.100
0.050
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
ALLOWABLE CASE TEMPERATURE
VS. AVERAGE FORWARD CURRENT
160
RESISTIVE, INDUCTIVE LOAD
140
DC
120 OPERATION
100 SINGLE-PHASE
OPERATION
THREE-PHASE
80 OPERATION
60
0 50 100 150 200 250
AVERAGE FORWARD CURRENT (A)
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
4000
3000
2000
1000
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM POWER DISSIPATION
250
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
200 OPERATION
THREE-PHASE
150 OPERATION
DC
OPERATION
100
50
0
0 50 100 150 200 250
AVERAGE FORWARD CURRENT (A)
Feb.1999




RM150CZ-H.pdf
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