XN2401 (Panasonic Semiconductor)
Silicon PNP epitaxial planer transistor

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Composite Transistors
XN2401
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
(Base-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SB709A × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 7R
Internal Connection
Tr1
5
1
4
32
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Ratio between 2 elements
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE (small/large)*1
VCE(sat)
fT
Cob
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VCE = –10V, IC = –2mA
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
0.5
typ
0.99
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
1


XN2401 (Panasonic Semiconductor)
Silicon PNP epitaxial planer transistor

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Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
– 60
Ta=25˚C
– 50 IB= – 300µA
– 250µA
– 40
– 200µA
– 30
–150µA
– 20
–100µA
–10 –50µA
0
0 –2 –4 –6 –8 –10 –12 –14 –16 –18
Collector to emitter voltage VCE (V)
XN2401
IC — IB
– 60
VCE= – 5V
Ta=25˚C
– 50
– 40
– 30
– 20
–10
0
0 –100 –200 –300 –400
Base current IB (µA)
– 400
– 350
IB — VBE
VCE= – 5V
Ta=25˚C
– 300
– 250
– 200
–150
–100
– 50
0
0 –0.4 –0.8 –1.2 –1.6
Base to emitter voltage VBE (V)
– 240
– 200
–160
IC — VBE
VCE= – 5V
25˚C
Ta=75˚C –25˚C
–120
– 80
– 40
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
–10
IC/IB=10
–3
–1 25˚C Ta=75˚C
– 0.3
– 25˚C
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
600
VCE= –10V
500
400
Ta=75˚C
300 25˚C
– 25˚C
200
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
Cob — VCB
8
f=1MHz
7
IE=0
Ta=25˚C
6
5
4
3
2
1
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
2


XN2401 (Panasonic Semiconductor)
Silicon PNP epitaxial planer transistor

No Preview Available !

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Composite Transistors
NF — IE
6
VCB=–5V
f=1kHz
5 Rg=2k
Ta=25˚C
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3
Emitter current IE (mA)
10
NF — IE
20
VCB=–5V
18
Rg=50k
Ta=25˚C
16
14
12 f=100Hz
10
8 1kHz
6 10kHz
4
2
0
0.1 0.2 0.3 0.5 1
2 3 5 10
Emitter current IE (mA)
XN2401
h Parameter — IE
300
200
hfe
100
50
30 hoe (µS)
20
10
5
hie (k)
3
2
VCE=–5V
f=270Hz
hre (×10–4)
Ta=25˚C
1
0.1 0.2 0.3 0.5 1 2 3 5 10
Emitter current IE (mA)
h Parameter — VCE
300 IE=2mA
200 f=270Hz
hfe Ta=25˚C
100
50
30
20
hoe (µS)
10
5
3 hre (×10–4)
2
hie (k)
1
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to emitter voltage VCE (V)
3




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