SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
20
rDS(on) (W)
0.020 @ VGS = 4.5 V
0.030 @ VGS = 2.5 V
0.060 @ VGS = 4.5 V
0.100 @ VGS = 2.5 V
ID (A)
9.1
7.5
5.3
4.1
FEATURES
D TrenchFETr Power MOSFET
S1 1
G1 2
S2 3
G2 4
SO-8
8D
7D
6D
5D
G2
Top View
Ordering Information:
Si4500BDY
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G1
S2
D
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
10 sec.
9.1
7.3
2.1
2.5
1.6
Steady State 10 sec.
20
"12
6.6
5.3
5.3 4.9
30
1.1 2.1
1.3 2.5
0.8 1.6
55 to 150
Steady State
20
"12
3.8
3.1
20
1.1
1.3
0.8
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
N-Channel
Typ
40
75
20
Max
50
95
22
P- Channel
Typ
41
75
23
Max
50
95
26
Unit
_C/W
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SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 20 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 4.5 V
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 9.1 A
VGS = 4.5 V, ID = 5.3 A
VGS = 2.5 V, ID = 3.3 A
VGS = 2.5 V, ID = 1 A
VDS = 15 V, ID = 9.1 A
VDS = 15 V, ID = 5.3 A
IS = 2.1 A, VGS = 0 V
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
Qgs P-Channel
VDS = 10 V, VGS = 4.5 V, ID = 5.3 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
P-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 2.1 A, di/dt = 100 A/ms
IF = 2.1 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
0.6
30
20
1.5
1.5
"100
"100
1
1
5
5
0.016
0.048
0.024
0.082
29
11
0.8
0.8
0.020
0.060
0.030
0.100
1.2
1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11 17
6.0 9
2.5
nC
1.3
3.2
1.6
35 50
20 30
50 80
35 60
31 50
55 85 ns
15 30
35 60
30 60
25 50
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Document Number: 72281
S-41428—Rev. B, 26-Jul-04


SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 3 V
2.5 V
25
30
25
N−CHANNEL
Transfer Characteristics
20 20
15
2V
10
5
0
0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
1.5 V
1234
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
VGS = 2.5 V
VGS = 4.5 V
5 10 15 20 25 30
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
4 ID = 9.1 A
15
10 TC = 125_C
5 25_C
55_C
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
1600
Capacitance
1400
1200
Ciss
1000
800
600
Coss
400
200
0
0
Crss
4 8 12 16
VDS Drain-to-Source Voltage (V)
3.0
20
On-Resistance vs. Junction Temperature
1.6
1.4
VIDG=S
= 4.5
9.1 A
V
3 1.2
2 1.0
1
0
0 2 4 6 8 10 12
Qg Total Gate Charge (nC)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
0.8
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
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SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
30
TJ = 150_C
10
TJ = 25_C
0
0
0.3 0.6 0.9 1.2
VSD Source-to-Drain Voltage (V)
1.5
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
0.06
ID = 9.1 A
0.05
0.04
ID = 3.3 A
0.03
0.02
0.01
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
Threshold Voltage
0.4
ID = 250 mA
0.2
0.0
0.2
0.4
0.6
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
Single Pulse Power
80
70
60
50
40
30
20
10
0
0.001
0.01
0.1 1
Time (sec)
10
Safe Operating Area
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
10
P(t) = 0.001
1 ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
0.1
BVDSS Limited
1 10
VDS Drain-to-Source Voltage (V)
100
100 600
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Document Number: 72281
S-41428—Rev. B, 26-Jul-04


SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
75_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
102
101
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 3.5 V
3V
16
20
16
P-CHANNEL
Transfer Characteristics
TC = 55_C
25_C
12
2.5 V
8
2V
4
1.5 V
0
012345
VDS Drain-to-Source Voltage (V)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
12 125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS Gate-to-Source Voltage (V)
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SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
On-Resistance vs. Drain Current
0.20
Capacitance
800
0.16
0.12
VGS = 2.5 V
0.08
0.04
0.00
048
VGS = 4.5 V
12 16 20
700
600
500
400
300
200
100
Crss
0
04
Coss
8
Ciss
12 16
20
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
Gate Charge
5
VDS = 10 V
ID = 5.3 A
4
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 5.3 A
1.4
3 1.2
2 1.0
1 0.8
0
012345678
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
TJ = 25_C
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
ID = 1 A
ID = 5.3 A
1
0.0 0.3 0.6 0.9 1.2
VSD Source-to-Drain Voltage (V)
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1.5
0.04
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
Document Number: 72281
S-41428—Rev. B, 26-Jul-04


SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.3
0.2 ID = 250 mA
0.1
0.0
0.1
0.2
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
80
70
60
50
40
30
20
10
0
0.001
P-CHANNEL
Single Pulse Power
0.01
0.1 1
Time (sec)
10
100 600
2
1
Duty Cycle = 0.5
Safe Operating Area
100
IDM Limited
rDS(on) Limited
10 P(t) = 0.0001
P(t) = 0.001
1 LIiDm(oitne)d
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
dc
1 10
VDS Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
75_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
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SI4500BDY (Vishay Siliconix)
Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
Square Wave Pulse Duration (sec)
1
P-CHANNEL
10
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Document Number: 72281
S-41428—Rev. B, 26-Jul-04




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