Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Si3853DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.200 @ VGS = –4.5 V
0.340 @ VGS = –2.5 V
ID (A)
"1.8
"1.3
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (v)
Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
0.5
A
3 mm S
G
TSOP-6
Top View
16
25
34
2.85 mm
K
N/C
D
S
G
K
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
–20
20
"12
"12
Continuous Drain Current (TJ = 150_C) (MOSFET)a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"1.8
"1.5
–1.05
1.15
0.73
1.0
0.64
"7
0.5
7
–55 to 150
"1.6
"1.2
–0.75
0.83
0.53
0.76
0.48
Notes
a. Surface Mounted on 1” x1” FR4 Board.
Unit
V
A
W
_C
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
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Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Si3853DV
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
93
103
130
140
75
80
Maximum
110
125
150
165
90
95
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = –16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V, TJ = 75_C
VDS w –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –1.8 A
VGS = –2.5 V, ID = –1.0 A
VDS = –5 V, ID = –1.8 A
IS = –1.05 A, VGS = 0 V
–0.5
–5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = –10 V, VGS = –4.5 V, ID = –1.8 A
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.05 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ
0.160
0.280
3.6
–0.83
2.7
0.4
0.6
11
34
19
24
20
Max Unit
"100
–1
–10
0.200
0.340
–1.10
V
nA
mA
A
W
S
V
4.0
nC
17
50
30 ns
36
40
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 0.5 A
IF = 0.5 A, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 75_C
Vr = 20 V, TJ = 125_C
Vr = 10 V
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2-2
Typ
0.42
0.33
0.002
0.06
1.5
31
Max
0.48
0.4
0.100
1
10
Unit
V
mA
pF
Document Number: 70979
S-61846—Rev. A, 04-Oct-99


Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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New Product
Si3853DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 4.5 thru 4 V
8
3.5 V
3V
6
4 2.5 V
8
6
4
MOSFET
Transfer Characteristics
TC = –55_C
25_C
125_C
2 2V
1.5 V
0
012345
VDS – Drain-to-Source Voltage (V)
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
Capacitance
450
0.5
VGS = 2.5 V
0.4
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
0.1
0
01234567
ID – Drain Current (A)
Ciss
360
270
180
Coss
90
Crss
0
0
4
8 12 16
VDS – Drain-to-Source Voltage (V)
20
Gate Charge
4.5
VDS = 10 V
3.6 ID = 1.8 A
2.7
1.8
0.9
0
0 0.6 1.2 1.8 2.4 3.0
Qg – Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
1.6 VGS = 10 V
ID = 1.8 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-3


Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Si3853DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
TJ = 150_C
1
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.6
ID = 1.8 A
0.5
ID = 1.2 A
0.4
0.3
TJ = 25_C
0.2
0.1
0.1
0.00
0.3 0.6 0.9 1.2
VSD – Source-to-Drain Voltage (V)
1.5
0
012345
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6
ID = 250 mA
0.4
Single Pulse Power, Junction-to-Ambient
8
6
0.2
0.0
–0.2
4
2
–0.4
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.1 1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 130_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 70979
S-61846—Rev. A, 04-Oct-99


Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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New Product
Si3853DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
MOSFET
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
5
1 10
SCHOTTKY
Forward Voltage Drop
1
0.1
0.01
20 V
10 V
TJ = 150_C
1
TJ = 25_C
0.001
0.0001
0
25 50 75 100 125
TJ – Junction Temperature (_C)
150
150
0.1
0
Capacitance
0.2 0.4
0.6
0.8
VF – Forward Voltage Drop (V)
1.0
120
90
60
30
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
0
0 4 8 12 16 20
VKA – Reverse Voltage (V
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2-5


Si3853DV (Vishay Siliconix)
P-Channel 20-V (D-S) MOSFET With Schottky Diode

No Preview Available !

Click to Download PDF File for PC

Si3853DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 140_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
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2-6
Document Number: 70979
S-61846—Rev. A, 04-Oct-99




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