SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.077 at VGS = 4.5 V
0.120 at VGS = 2.5 V
P-Channel - 30
0.170 at VGS = - 4.5 V
0.300 at VGS = - 2.5 V
ID (A)
3
2
-2
- 1.2
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low RDS(on) N- and P-Channel for High
Efficiency
• Optimized for High-Side/Low-Side
• Minimized Conduction Losses
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices Including PDAs, Cellular Phones and
Pagers
D1 S2
G2
G1
2.85 mm
Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free)
Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
10 s Steady State
P-Channel
10 s Steady State
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3 2.5 - 2 - 1.7
2.3
2.0
- 1.6
- 1.3
Pulsed Drain Current
IDM 8
-8
Continuous Source Current (Diode Conduction)a
IS
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.15
0.70
0.83
0.53
1.15
0.70
0.83
0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
93 110
130 150
75 90
P-Channel
Typ.
Max.
93 110
130 150
75 90
Unit
°C/W
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
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SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
SPECIFICATIONS TJ = 25°C, unless otherwise noted
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 3 A
VGS = - 4.5 V, ID = - 2 A
VGS = 2.5 V, ID = 2 A
VGS = - 2.5 V, ID = - 1.2 A
VDS = 5 V, ID = 3 A
VDS = - 5 V, ID = - 2 A
IS = 1.05 A, VGS = 0 V
IS = - 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 2 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 4.5 V, ID = - 2 A
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.05 A, dI/dt = 100 A/µs
IF = - 1.05 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
0.6
- 0.6
5
-5
Typ. Max. Unit
0.062
0.135
0.095
0.235
10
5
0.80
- 0.83
1.5
- 1.5
± 100
± 100
1
-1
5
-5
0.077
0.170
0.120
0.300
1.10
- 1.10
V
nA
µA
A
Ω
S
V
3 4.5
3.8 6
0.6
nC
0.6
1.0
1.5
58
58
12 23
15 23
13 23
ns
20 30
7 12
20 30
15 25
18 30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72032
S09-1927-Rev. C, 28-Sep-09


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
8
7 VGS = 5 V thru 2.5 V
6
8
7
6
5
4
3 2V
2
5
4
3
2
1
1.5 V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1
0
0.0
0.5 450
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.4
0.3
0.2
0.1
0.0
0
VGS = 2.5 V
VGS = 4.5 V
2468
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
6
5
VDS = 15 V
ID = 2 A
4
3
2
1
0
012345
Qg - Total Gate Charge (nC)
Gate Charge
360
Ciss
270
180
90 Coss
Crss
0
06
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 4.5 V
ID = 3 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
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SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
10 0.25
TJ = 150 °C
1
TJ = 25 °C
0.20
0.15
0.10
0.05
ID = 3 A
0.1
0.00 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
ID = 250 µA
0.2
0.0
- 0.2
- 0.4
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
10 Limited by RDS(on)*
0
0.01 0.1
1
10 30
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM Limited
100 µs
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1
ID(on)
Limited
1 ms
10 ms
0.1
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
10 s, 1 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
Si3590DV
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
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SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
8
VGS = 5 V thru 3.5 V
7
3V
6
5
4
2.5 V
3
2
2V
1
1.5 V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
8
7 TC = - 55 °C
25 °C
6
5 125 °C
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.75 500
0.60
0.45
0.30
VGS = 2.5 V
0.15
VGS = 4.5 V
0.00
0
1234567
ID - Drain Current (A)
On-Resistance vs. Drain Current
8
6
5
VDS = 15 V
ID = 2 A
4
3
2
1
0
012345
Qg - Total Gate Charge (nC)
Gate Charge
400
Ciss
300
200
100 Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 4.5 V
ID = 2 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 72032
S09-1927-Rev. C, 28-Sep-09


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
10 0.5
Si3590DV
Vishay Siliconix
0.4
TJ = 150 °C
1
TJ = 25 °C
0.3
ID = 2 A
0.2
0.1
0.1
0.00
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
0.4
0.3 ID = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
10 Limited by RDS(on)*
0.0
01234567
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
0
0.01 0.1
1
10 30
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM Limited
100 µs
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
1 1 ms
ID(on)
Limited
10 ms
0.1 TC = 25 °C
Single Pulse
100 ms
10 s, 1 s
0.01
BVDSS Limited
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72032.
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Document Number: 72032
S09-1927-Rev. C, 28-Sep-09


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
Package Information
Vishay Siliconix
e1 e1
54
E1 E
1
23
-B-
654
E1 E
1
23
-B-
eb
5-LEAD TSOP
D
0.08 C
0.15 M C B A
-A-
A2 A
eb
6-LEAD TSOP
4x 1
R
R
- C - A1
Seating Plane
4x 1
(L1)
0.15 M C B A
0.17 Ref
c
L2
Gauge Plane
Seating Plane
L
Document Number: 71200
18-Dec-06
MILLIMETERS
Dim Min Nom Max
A 0.91 - 1.10
A1 0.01 - 0.10
A2 0.90 - 1.00
b 0.30 0.32 0.45
c 0.10 0.15 0.20
D 2.95 3.05 3.10
E 2.70 2.85 2.98
E1 1.55 1.65 1.70
e 0.95 BSC
e1 1.80 1.90 2.00
L 0.32 - 0.50
L1 0.60 Ref
L2 0.25 BSC
R 0.10
-
-
048
1 7 Nom
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
INCHES
Min Nom Max
0.036 - 0.043
0.0004
-
0.004
0.035 0.038 0.039
0.012 0.013 0.018
0.004 0.006 0.008
0.116 0.120 0.122
0.106 0.112 0.117
0.061 0.065 0.067
0.0374 BSC
0.071 0.075 0.079
0.012 - 0.020
0.024 Ref
0.010 BSC
0.004
-
-
048
7 Nom
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SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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AN823
Vishay Siliconix
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see http://www.vishay.com/doc?71200 and see
http://www.vishay.com/doc?72610 for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
0.167
4.25
0.014
0.35
0.026
0.65
0.074
1.875
0.122
3.1
0.049
1.25
0.049
1.25
0.010
0.25
FIGURE 1. Recommended Copper Spreading Footprint
Document Number: 71743
27-Feb-04
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Ramp-Up Rate
Temperature @ 155 " 15_C
Temperature Above 180_C
Maximum Temperature
Time at Maximum Temperature
Ramp-Down Rate
+6_C/Second Maximum
120 Seconds Maximum
70 180 Seconds
240 +5/0_C
20 40 Seconds
+6_C/Second Maximum
FIGURE 2. Solder Reflow Temperature Profile
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SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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AN823
Vishay Siliconix
255 260_C
1X4_C/s (max)
10 s (max)
140 170_C
3_C/s (max)
60-120 s (min)
Pre-Heating Zone
217_C
60 s (max)
Reflow Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
3-6_C/s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
1.2
1.0
0.8
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
FIGURE 4. Si3434DV
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Document Number: 71743
27-Feb-04


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
Return to Index
Return to Index
0.039
(1.001)
0.020
(0.508)
0.019
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72610
Revision: 21-Jan-08


SI3590DV (Vishay Siliconix)
N- and P-Channel 30-V (D-S) MOSFET

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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1 Document Number: 91000




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