SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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N-Channel 100 V (D-S) MOSFET
Si2328DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.250 at VGS = 10 V
ID (A)
1.5
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• 100 % Rg and UIS Tested
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2328DS (D8)*
*Marking Code
Ordering Information: Si2328DS-T1-E3 (Lead (Pb)-free)
Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
Avalanche Currentb
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
Power Dissipationa
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
100
± 20
1.5 1.15
1.2 0.92
6
6
1.8
0.6
1.25 0.73
0.80 0.47
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s
Steady State
Maximum Junction-to-Foot
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
RthJA
RthJF
Typical
80
130
45
Maximum
100
170
55
Unit
°C/W
Document Number: 71796
www.vishay.com
S11-2000-Rev. F, 10-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Si2328DS
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 70 °C
VDS 15 V, VGS = 10 V
VGS = 10 V, ID = 1.5 A
VDS = 15 V, ID = 1.5 A
IS = 1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Qg
Qgs VDS = 50 V, VGS = 10 V, ID = 1.5 A
Qgd
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 33
ID 0.2 A, VGEN = 10 V, Rg = 6
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.5 A, dI/dt = 100 A/µs
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Limits
Typ.
Max.
100
24
± 100
1
75
6
0.195 0.250
4
0.8 1.2
3.3 5
0.47
1.45
0.5 1.3 2.4
7 11
11 17
9 15
10 15
50 100
Unit
V
nA
µA
A
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
VGS = 10 V, 9 V, 8 V
7V
12
99
6V
66
5V
3
3 V, 2 V, 1 V
4V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = 125 °C
3
25 °C
- 55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
Document Number: 71796
2 S11-2000-Rev. F, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Si2328DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6 250
0.5
0.4
VGS = 10 V
0.3
0.2
0.1
0.0
0
369
ID - Drain Current (A)
On-Resistance vs. Drain Current
12
200
Ciss
150
100
50
Crss
0
0
Coss
20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
20
VDS = 50 V
ID = 1.5 A
16
2.5
VGS = 10 V
ID = 1.5 A
2.0
12 1.5
8 1.0
4 0.5
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
10
1 TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.6
0.5 ID = 1.5 A
0.4
0.3
0.2
0.1
0.0
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71796
www.vishay.com
S11-2000-Rev. F, 10-Oct-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Si2328DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6
0.3
0.0
- 0.3
- 0.6
- 0.9
ID = 250 µA
12
10
8
TA = 25 °C
6
4
2
- 1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1 1
10
Time (s)
Single Pulse Power
100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 176 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71796.
www.vishay.com
Document Number: 71796
4 S11-2000-Rev. F, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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SOT-23 (TO-236): 3-LEAD
b
Package Information
Vishay Siliconix
3
E1 E
12
S
A A2
A1
e
e1
D
0.10 mm C
0.004"
Seating Plane
C
C
q
L
L1
0.25 mm
Gauge Plane
Seating Plane
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
S
q
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
MILLIMETERS
Min Max
0.89 1.12
0.01 0.10
0.88 1.02
0.35
0.085
2.80
2.10
0.50
0.18
3.04
2.64
1.20 1.40
0.95 BSC
1.90 BSC
0.40 0.60
0.64 Ref
0.50 Ref
3° 8°
Min
0.035
0.0004
0.0346
0.014
0.003
0.110
0.083
0.047
0.016
3°
INCHES
0.0374 Ref
0.0748 Ref
0.025 Ref
0.020 Ref
Max
0.044
0.004
0.040
0.020
0.007
0.120
0.104
0.055
0.024
Document Number: 71196
09-Jul-01
www.vishay.com
1


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
0.059
1.5
0.081
2.05
0.150
3.8
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
Document Number: 70739
26-Nov-03
www.vishay.com
1


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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RECOMMENDED MINIMUM PADS FOR SOT-23
Application Note 826
Vishay Siliconix
0.037
(0.950)
0.022
(0.559)
Return to Index Return to Index
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000




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