SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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New Product
N-Channel 100-V (D-S) MOSFET
Si2328DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.250 @ VGS = 10 V
ID (A)
1.5
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2328DS (D8)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Avalanche Currentb
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
L = 0.1 mH
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
1.5
1.2
1.25
0.80
100
"20
6
6
1.8
0.6
–55 to 150
1.15
0.92
0.73
0.47
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
80
130
45
Maximum
100
170
55
Unit
_C/W
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SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Si2328DS
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 70_C
VDS w 15 V, VGS = 10 V
VGS = 10 V, ID = 1.5 A
VDS = 15 V, ID = 1.5 A
IS = 1.0 A, VGS = 0 V
VDS = 50 V, VGS = 10 V, ID = 1.5 A
VDD = 50 V, RL = 33 W
ID ^ 0.2 A, VGEN = 10 V, RG = 6 W
IF = 1.5 A, di/dt = 100 A/ms
Limits
Min Typ Max
Unit
100
2
"100
1
75
6
0.195
0.250
4
0.8 1.2
V
nA
mA
A
W
S
V
3.3
0.47
1.45
4.0
nC
7 11
11 17
ns
9 15
10 15
50 100 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12
VGS = 10, 9, 8 V
7V
12
99
6V
66
3
0
0
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2
5V
3, 2, 1 V
4V
2468
VDS Drain-to-Source Voltage (V)
10
3
0
0
Transfer Characteristics
TC = 125_C
25_C
55_C
246
VGS Gate-to-Source Voltage (V)
8
Document Number: 71796
S-05372Rev. A, 25-Dec-01


SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

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Click to Download PDF File for PC

New Product
Si2328DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.6
250
Capacitance
0.5
0.4
VGS = 10 V
0.3
0.2
0.1
0.0
0369
ID Drain Current (A)
Gate Charge
20
VDS = 10 V
ID = 1.5 A
16
12
200
Ciss
150
100
50 Coss
Crss
0
0 20 40 60 80 100
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 1.5 A
2.0
12 1.5
8 1.0
4 0.5
0
0123456
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
1 TJ = 150_C
0.1
TJ = 25_C
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
1.2
Document Number: 71796
S-05372Rev. A, 25-Dec-01
0.0
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5 ID = 1.5 A
0.4
0.3
0.2
0.1
0.0
0
2468
VGS Gate-to-Source Voltage (V)
10
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SI2328DS (Vishay Siliconix)
N-Channel 100-V (D-S) MOSFET

No Preview Available !

Click to Download PDF File for PC

Si2328DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
12
0.3
ID = 250 mA
0.0
10
8
0.3
6
0.6
4
0.9
2
1.2
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
0.01
Single Pulse Power
TA = 25_C
0.1 1 10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 176_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 71796
S-05372Rev. A, 25-Dec-01




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