FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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April 1999
PRELIMINARY
FDS3580
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
7.6 A, 80 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.031 @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
(Note 1c)
Operating and Storage Junction Temperature Range
5
6
7
8
Ratings
80
±20
7.6
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS3580
FDS3580
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS3580 Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 64 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
80
V
81 mV/°C
1
100
-100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2 2.5 4
V
ID = 250 µA, Referenced to 25°C -7 mV/°C
VGS = 10 V, ID = 7.6 A
0.022 0.027
VGS = 10 V, ID = 7.6 A, TJ=125°C
0.037 0.055
VGS = 6 V, ID = 7 A
0.024 0.031
VGS = 10 V, VDS = 5 V
30
VDS = 5 V, ID = 7.6 A
28
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1800
180
90
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 40 V, ID = 7.6 A,
VGS = 10 V
13 26
8 20
34 60
16 30
34 46
6.1
6.9
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.1 A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
0.74 1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDS3580 Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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Typical Characteristics
60
50
40
30
20
10
0
0
VGS = 10V
6.0V
5.0V
4.5V
4.0V
3.5V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
5
Figure 1. On-Region Characteristics.
2
1.8
ID = 7.6A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
TA = -55oC
25oC
125oC
30
20
10
0
2345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 4.0V
4.5V
5.0V
6.0V
7.0V 10V
10 20 30 40 50
ID, DIRAIN CURRENT (A)
60
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
0.05
0.04
ID = 3.8A
TA = 125oC
0.03
0.02
0.01
TA = 25oC
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1 TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDS3580 Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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Typical Characteristics (continued)
10
ID = 7.6A
8
6
VDS = 10V
20V
40V
4
2
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
CISS
f = 1MHz
VGS = 0 V
1200
800
400 COSS
CRSS
0
0 10
20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
70
80
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0 0. 2
0.0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 .00 0 1
0 .0 0 1
0.01
0.1
t 1, TIME (s e c )
1
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS3580 Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
ESD Label
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Customized
Label
F63TNR
Label
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Standard
(no flow code)
TNR
L86Z
Rail/Tube
F011
TNR
Qty per Reel/Tube/Bag
2,500
95
4,000
Reel Size
13" Dia - 13" Dia
Box Dimension (mm) 343x64x343 530x130x83 343x64x343
Max qty per Box
5,000
30,000
8,000
Weight per unit (gm)
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
Note/Comments
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2500
SPEC:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
SOIC-8 Unit Orientation
F852
NDS
9959
Pin 1
343mm x 342mm x 64mm
Standard Intermediate box
F63TNLabel
ESD Label
F63TN Label
ESD Label
Carrier Tape
Cover Tape
Trailer Tape
640mm minimum or
80 empty pockets
Components
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
SOIC(8lds) 6.50
(12mm)
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0 D1 E1 E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
F P1
5.50
+/-0.05
8.0
+/-0.1
P0
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
12mm
7" Dia
12mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
DETAIL AA
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
© 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A


FDS3580 (Fairchild Semiconductor)
80V N-Channel PowerTrenchTM MOSFET

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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.




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