AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
n General Description
The AME8808 family of positive, linear regulators feature
low quiescent current (30µA typ.) with low dropout volt-
age, making them ideal for battery applications. The
space-saving SOT-223 and DPAK-2 packages are attrac-
tive for "Pocket" and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.
The AME8808 is stable with an output capacitance of
2.2µF or greater.
n Features
l Very Low Dropout Voltage
l Guaranteed 750mA Output
l Accurate to within 1.5%
l 30µA Quiescent Current
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Space-Saving SOT-223 and DPAK-2 Package
l Factory Pre-set Output Voltages
l Low Temperature Coefficient
n Functional Block Diagram
IN OUT
Overcurrent
Shutdown
Thermal
Shutdown
R1
AMP
V ref=1.215V
R2
GND
n Applications
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
l Electronic Scales
n Typical Application
IN
5V
IN AME8808 OUT
GND
C1
1 µF
OUT
C2
2 . 2µF
1


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
n Pin Configuration
SOT-223 Top View
12 3
1. GND
2. VOUT
3. VIN
750mA CMOS LDO
DPAK-2 Top View
12 3
1. GND
2. VOUT (Connected with heat sink)
3. VIN
n Ordering Information
P a rt N u m b e r M a rk in g O u tp u t V o lta g e P a c k a g e O p e ra tin g T e m p . R a n g e
A M E 8 8 0 8A E G T A E Tyww
3 .3 V
S OT-223
-4 0 OC to +8 5 OC
A M E 8 8 0 8B E G T A E Uyww
3 .0 V
S OT-223
-4 0 OC to +8 5 OC
A M E 8 8 0 8C E G T A E V yww
A M E 8 8 0 8D E G T A E W yww
2 .8 V
2 .5 V
S OT-223
S OT-223
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
A M E 8 8 0 8E E G T A E X yww
3 .8 V
S OT-223
-4 0 OC to +8 5 OC
AME8808FEGT
AME8808GEGT
AME8808HEGT
A E Yyww
A E Zyww
A F A yww
3 .6 V
3 .5 V
2 .7 V
S OT-223
S OT-223
S OT-223
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
A M E 8 8 0 8 IE G T A F B yw w
3 .4 V
S OT-223
-4 0 OC to +8 5 OC
A M E 8 8 0 8JE G T A G Uyww
A M E 8 8 0 8K E G T A HW yww
2 .8 5 V
3 .7 V
S OT-223
S OT-223
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
A M E 8 8 0 8L E G T A JG yww
1 .5 V
S OT-223
-4 0 OC to +8 5 OC
A M E 8 8 0 8M E G T A JHyww
A M E 8 8 0 8NE G T A K Uyww
A M E 8 8 0 8O E G T A K V yww
1 .8 V
2 .9 V
3 .1 V
S OT-223
S OT-223
S OT-223
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
-4 0 OC to +8 5 OC
P le a s e c o ns ult A M E s a le s o ffic e o r a utho rize d R e p ./D is trib uto r fo r o the r o utp ut vo lta g e
a nd p a c k a g e typ e a va ila b ility.
2


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
n Ordering Information (contd.)
Part Number Marking Output Voltage Package Operating Temp. Range
A M E 8808A E CS
A M E 8808B E CS
A M E 8808CE CS
A M E 8808DE CS
A M E 8808E E CS
AME8808FECS
AME8808GECS
A M E 8808HE CS
A M E 8808IE CS
A M E 8808JE CS
A M E 8808K E CS
AME8808LECS
AME8808MECS
A M E 8808NE CS
AME8808OECS
AME8808
AECS
yyww
AME8808
BECS
yyww
AME8808
CECS
yyww
AME8808
DECS
yyww
AME8808
EECS
yyww
AME8808
FECS
yyww
AME8808
GECS
yyww
AME8808
HECS
yyww
AME8808
IECS
yyww
AME8808
JE CS
yyww
AME8808
KECS
yyww
AME8808
LECS
yyww
AME8808
MECS
yyww
AME8808
NECS
yyww
AME8808
OECS
yyww
3.3V
3.0V
2.8V
2.5V
3.8V
3.6V
3.5V
2.7V
3.4V
2.85V
3.7V
1.5V
1.8V
2.9V
3.1V
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
DP A K -2
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
-40OC to +85OC
Please consult AME sales office or authorized Rep./Distributor for other output voltage
and package type availability.
3


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
n Absolute Maximum Ratings
Pa ra m e te r
Input Voltage
Output Current
Input, Output Voltage
ESD Classification
Maximum
8
1
GND - 0.3 to VDD + 0.3
B
n Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Temperature Range
Junction Temperature
Rating
4.5 to 5.5
-40 to +85
-40 to +125
n Thermal Information
Parameter
Thermal Resistance (θjc)
SOT-223
DPAK-2
Internal Power Dissipation (PD)
(T = 100oC)
SOT-223
DPAK-2
Maximum Junction Temperature
Maximum Lead Temperature ( 10 Sec)
Maximum
160
60
625
3,000
150
300
750mA CMOS LDO
Unit
V
A
V
Unit
V
oC
oC
Unit
oC / W
mW
oC
oC
Caution: Stress above the listed absolute rating may cause permanent damage to the device
4


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
n Electrical Specifications
TA = 25 o C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Input Voltage
Output Voltage Accuracy
VIN
VO
Dropout Voltage
VDROPOUT
Output Current
Current Limit
Short Circuit Current
Quiescent Current
Ground Pin Current
IO
ILIM
ISC
IQ
IGND
Line Regulation
REGLINE
Load Regulation
REGLOAD
Over Temerature Shutdown OTS
Over Temerature Hysterisis OTH
VO Temperature Coefficient
TC
Power Supply Rejection PSRR
Note 1
IO=1mA
-1.5
IO=750mA
VO=VONOM -2.0%
1.5V<VO(NOM)<=2.0V
2.0V<VO(NOM)<=2.8V
2.8V<VO(NOM)<3.8V
See
chart
VO>1.2V
750
VO>1.2V
750 850
VO<0.8V
300
IO=0mA
30
IO=1mA to 750mA
30
IO=5mA
VIN=VO+1 to VO+2
VO < 2.0V
VO >= 2.0V
0.02
IO=1mA to 750mA
0.2
150
30
30
IO=100mA
CO=2.2mF
f=1kHz
f=10kHz
f=100kHz
50
20
15
8V
1.5 %
1400
1000 mV
750
mA
mA
600 mA
50 µA
50 µA
0.15 %
0.1 %
1%
oC
oC
ppm/oC
dB
Output Voltage Noise
f=10Hz to 100kHz
eN
IO=10mA,CBYP=0mF
Co=2.2mF
Co=100mF
30
mVrms
20
Note1:VIN(min)=VOUT+VDROPOUT
5


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
n Detailed Description
The AME8808 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro-
tection circuits. During normal operation, the error am-
plifier compares the output voltage to a precision refer-
ence. Over-current and Thermal shutdown circuits be-
come active when the junction temperature exceeds
150oC, or the current exceeds 750mA. During thermal
shutdown, the output voltage remains low. Normal op-
eration is restored when the junction temperature drops
below 120oC.
The AME8808 switches from voltage mode to current mode
when the load exceeds the rated output current. This
prevents over-stress. The AME8808 also incorporates
current foldback to reduce power dissipation when the
output is short circuited. This feature becomes active
when the output drops below 0.8 volts, and reduces the
current flow by 65%. Full current is restored when the
voltage exceeds 0.8 volts.
n Enable
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the
quiescent current is less than 1µA. This pin behaves
much like an electronic switch.
n External Capacitors
The AME8806/8809 is stable with an output capacitor
to ground of 2.2µF or greater. Ceramic capacitors have
the lowest ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the highest ESR, resulting in the poorest AC response.
Unfortunately, large value ceramic capacitors are com-
paratively expensive. One option is to parallel a 0.1µF
ceramic capacitor with a 10µF Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low over-
all cost.
A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
All capacitors should be placed in close proximity to the
pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
6


AME8808NEGT (Analog Microelectronics)
750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
Ground Current vs. Input Voltage
45
40
35 85O C
30
25
20 25O C
15
10
5
0
0 1 2 3 45 6 7 8
Input Voltage (V)
Load Step ( 1mA-600mA)
Output
C L=2.2µF
C I N = 2 . 2 µF
ILoad
TIME ( 20mS/DIV)
0
Drop Out Voltage vs. Output Voltage
0.3
0.25
0.2
ILOAD=600mA
0.15
0.1
0.05
0
2 2.5 3 3.5 4 4.5 5 5.5
Output Voltage (V)
Safe Operating Area
Power Supply Rejection Ratio
0
-10
-20
C L=2.2 µF Tantalum
CBYP=0
-30
-40
100mA
-50 100mA
-60
-70
-80
1.0E+01
100 µA
100 µA
1.0E+03
1.0E+05
10mA
1mA
1.0E+07
Frequency (Hz)
Line Transient Response
75OC rise
SOT-223
DPAK-2
With HS capable of twice θjc
Input-Output Voltage Differential (V)
C L O A D =2.2µF
IL O A D = 1 m A
VOUTDC=3.3V
VINDC=4.5V
TIME (200mS/DIV)
7


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750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
Noise Measurement
Overtemperature Shutdown
CL = 2.2µF
NO FILTER
RLOAD=6.6
0
TIME (20mS/DIV)
Current Limit Response
C L O A D =2.2µF
C IN=1.0µF
RLOAD=3.3
VOUTNOM=3.3V
TIME (2mS/DIV)
TIME (0.5Sec/DIV)
Short Circuit Response
C LOAD= 2 . 2µF
C IN= 1µF
RLOAD<100m
0
TIME (2mS/DIV)
8


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750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
750mA CMOS LDO
n Package Dimension
TO-252 (DPAK)
TO-252 (DPAK)
SYMBOLS
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
MIN
MAX
0.45 0.58
1.60 1.95
0.51 -
0.45 0.60
6.40 6.80
5.40 5.80
2.20 2.85
- * 2.30
- 0.90
- 0.97
5.20 5.50
0.89 2.03
INCHES
MIN
MAX
0.0177
0.06
0.02
0.0177
0.252
0.2126
0.0866
-
-
-
0.20
0.035
0.023
0.0768
-
0.0236
0.2677
0.2283
0.1122
* 0.0906
0.0354
0.038
0.22
0.08
* : Typical value
NOTES :
1. CONTROLLINGDIMENSION : MILLIMETERS.
2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
SYMBOLS
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
MIN
MAX
0.45 0.58
1.60 1.95
0.51 -
0.45 0.60
6.40 6.80
5.40 5.80
2.20 2.85
- * 2.30
- 0.90
- 0.97
5.20 5.50
0.89 2.03
INCHES
MIN
MAX
0.0177
0.06
0.02
0.0177
0.252
0.2126
0.0866
-
-
-
0.023
0.0768
-
0.0236
0.2677
0.2283
0.1122
* 0.0906
0.0354
0.038
0.20 0.22
0.035
0.08
* : Typical value
NOTES :
1. CONTROLLINGDIMENSION : MILLIMETERS.
2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
9


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750mA CMOS LDO

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Analog Microelectronics, Inc.
AME8808
n Package Dimension
SOT-223
750mA CMOS LDO
MILLIMETERS
INCHES
α SYMBOLS
MIN MAX MIN MAX
A
1.50
1.80
0.0591
0.0709
A1
0.02
0.10
0.0008
0.0039
B
0.60
0.838
0.0236
0.033
B1
2.895
3.15
0.1140
0.1240
C
0.24
0.381
0.0094
0.0150
D
6.299
6.706
0.2480
0.2640
E
3.30
3.708
0.1299
0.1460
e 2.30 BSC
0.090 BSC
e1 4.60 BSC
0.181 BSC
H
6.70
7.30
0.2638
0.2874
L 0.91 MIN
0.0360 MIN
L1 2.00 MAX
0.0787 MAX
L2 0.06 BSC
0.0024 BSC
α
° °° °
0 10 0 10
10


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750mA CMOS LDO

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www.analogmicro.com
E-Mail: info@analogmicro.com
Life Support Policy:
These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-
support devices or systems, without the express written approval of the president
of Analog Microelectronics, Inc.
Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its
devices and advises its customers to obtain the latest version of relevant information.
© Analog Microelectronics, Inc., August 2001
Document: 2006-DS8808-C
Corporate Headquarters
Analog Microelectronics, Inc.
3100 De La Cruz Blvd. Suite 201
Santa Clara, CA. 95054-2046
Tel : (408) 988-2388
Fax: (408) 988-2489
Asia Pacific Headquarters
AME, Inc.
2F, 187 Kang-Chien Road, Nei-Hu District
Taipei 114, Taiwan, R.O.C.
Tel : 886 2 2627-8687
Fax : 886 2 2659-2989




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