BAT68-05 (Siemens Semiconductor Group)
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

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Silicon Schottky Diodes
q For mixer applications in the VHF/UHF range
q For high-speed switching
BAT 68 …
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 68
Marking
83
Ordering Code Pin Configuration
(tape and reel)
Q62702-A926
Package1)
SOT-23
BAT 68-04
84
Q62702-A4
BAT 68-05
85
Q62702-A15
BAT 68-06
86
Q62702-A19
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
02.96


BAT68-05 (Siemens Semiconductor Group)
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

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Click to Download PDF File for PC

q For mixer applications in the VHF/UHF range
q For high-speed switching
BAT 68 …
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 68-07
Marking
87
Ordering Code Pin Configuration
(tape and reel)
Q62702-A44
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Power dissipation, TS 60 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
IF
Ptot
Tj
Tstg
Values
Unit
8V
130 mA
150 mW
150 ˚C
– 55 … + 150
Rth JA
Rth JS
750
590
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
2


BAT68-05 (Siemens Semiconductor Group)
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

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BAT 68 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Reverse current
VR = 1 V
VR = 1 V, TA = 60 ˚C
Forward voltage1)
IF = 1 mA
IF = 10 mA
Diode capacitance
VR = 0, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
Symbol
min.
VBR 8
Values
typ. max.
––
Unit
V
IR µA
– – 0.1
– – 1.2
VF mV
– – 340
– – 500
CT – – 1 pF
rf – – 10
1) Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, VF = 20 mV max.
Semiconductor Group
3


BAT68-05 (Siemens Semiconductor Group)
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

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Forward current IF = f (VF)
BAT 68 …
Forward current IF = f (TS, TA*)
*Package mounted on alumina
BAT 68-04, -05, -06, -07
Forward current IF = f (TS; TA*)
*Package mounted on alumina
BAT 68
Reverse current IR = f (VR)
Semiconductor Group
4


BAT68-05 (Siemens Semiconductor Group)
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

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Diode capacitance CT = f (VR)
f = 1 MHz
BAT 68 …
Differential forward resistance rf = f (IF)
f = 10 kHz
Semiconductor Group
5




BAT68-05.pdf
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