80R1K4P7 (Infineon)
MOSFET

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IPA80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
1.4
Qg,typ
10
nC
ID 4 A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPA80R1K4P7
Package
PG-TO 220 FullPAK
Marking
80R1K4P7
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-07


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1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power dissipation
Operating and storage temperature
Mounting torque
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3)
Insulation withstand voltage
Ptot
Tj,Tstg
-
IS
IS,pulse
dv/dt
dif/dt
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-
-
-
-
-
-
Values
Typ. Max.
-4
- 2.7
- 8.9
-8
- 0.07
- 0.6
- 100
- 20
- 30
- 24
- 150
- 50
-3
- 8.9
-1
- 50
- 2500
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=0.6A; VDD=50V
mJ ID=0.6A; VDD=50V
A-
V/ns VDS=0to400V
V
static;
AC (f>1 Hz)
W TC=25°C
°C -
Ncm M2.5 screw
A TC=25°C
A
V/ns
A/µs
V
TC=25°C
VDS=0to400V,ISD<=0.7A,Tj=25°C
VDS=0to400V,ISD<=0.7A,Tj=25°C
Vrms,TC=25°C,t=1min
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Thermal resistance, junction
for SMD version
- ambient
RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
Min.
-
-
Values
Typ. Max.
- 5.1
- 80
Unit Note/TestCondition
°C/W -
°C/W leaded
- - - °C/W n.a.
- - 260 °C 1.6 mm (0.063 in.) from case for 10s
1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
Final Data Sheet
3
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3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Gate-source leakage curent incl. zener
diode
IGSS
Drain-source on-state resistance
Gate resistance
RDS(on)
RG
Min.
800
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.5
-1
10 -
-1
1.2 1.4
3.1 -
1.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.07mA
µA
VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
µA VGS=20V,VDS=0V
VGS=10V,ID=1.4A,Tj=25°C
VGS=10V,ID=1.4A,Tj=150°C
f=250kHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
250 -
6.5 -
8-
Unit Note/TestCondition
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=0to500V
- 97 - pF ID=constant,VGS=0V,VDS=0to500V
-
10 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22
-
8-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22
-
40 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22
-
20 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
1-
5-
10 -
4.5 -
Unit Note/TestCondition
nC VDD=640V,ID=1.4A,VGS=0to10V
nC VDD=640V,ID=1.4A,VGS=0to10V
nC VDD=640V,ID=1.4A,VGS=0to10V
V VDD=640V,ID=1.4A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
Final Data Sheet
4
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Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
800 -
5-
9-
Unit Note/TestCondition
V VGS=0V,IF=1.4A,Tf=25°C
ns VR=400V,IF=0.7A,diF/dt=50A/µs
µC VR=400V,IF=0.7A,diF/dt=50A/µs
A VR=400V,IF=0.7A,diF/dt=50A/µs
Final Data Sheet
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4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
25
20
15
10
5
Diagram2:Safeoperatingarea
102
101
100 µs
10 ms 1 ms
10 µs
1 µs
100 DC
10-1
10-2
10-3
0
0
Ptot=f(TC)
10-4
25 50 75 100 125 150
100
TC[°C]
101 102
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
103
Diagram3:Safeoperatingarea
102
Diagram4:Max.transientthermalimpedance
101
101
100
10-1
10-2
10-3
100 µs
10 ms1 ms
DC
10 µs
1 µs
0.5
0.2
100 0.1
0.05
0.02
0.01
single pulse
10-4
100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
Final Data Sheet
10-1
103 10-5
10-4
ZthJC=f(tP);parameter:D=tp/T
10-3
tp[s]
10-2
10-1
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Diagram5:Typ.outputcharacteristics
12
10
8
6
4
2
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V 10 V
8V
7V
Diagram6:Typ.outputcharacteristics
7
6
6V 5
5.5 V
5V
4
3
2
4.5 V
1
0
15 20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15 20
Diagram7:Typ.drain-sourceon-stateresistance
7.0
5 V 5.5 V 6 V
6.0
6.5 V
7V
10 V
5.0
4.0
3.0
2.0
Diagram8:Drain-sourceon-stateresistance
3.5
3.0
2.5
98%
2.0
typ
1.5
1.0
0.5
1.0
024
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
6
0.0
8 10
-50 -25 0 25 50 75 100 125 150
Tj[°C]
RDS(on)=f(Tj);ID=1.4A;VGS=10V
Final Data Sheet
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Diagram9:Typ.transfercharacteristics
10
9
8
7
6
5
4
3
2
1
0
0246
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
8
Diagram10:Typ.gatecharge
10
25 °C
9
8
7
6
120 V
640 V
150 °C
5
4
3
2
1
0
10 12
02468
Qgate[nC]
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
10
Diagram11:Forwardcharacteristicsofreversediode
102
25 °C
125 °C
Diagram12:Avalancheenergy
9
8
7
101 6
5
4
100 3
2
1
10-1
0.0
0.5
IF=f(VSD);parameter:Tj
1.0
VSD[V]
1.5
0
2.0 25 50 75 100 125 150
Tj[°C]
EAS=f(Tj);ID=0.6A;VDD=50V
Final Data Sheet
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Diagram13:Drain-sourcebreakdownvoltage
950
900
850
Diagram14:Typ.capacitances
104
103
Ciss
102
800 101 Coss
Crss
750 100
700
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
10-1
0
100 200 300 400 500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
100 200 300 400 500 600 700 800
VDS[V]
Eoss=f(VDS)
Final Data Sheet
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5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
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6PackageOutlines
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
DIM MILLIMETERS
INCHES
MIN MAX MIN MAX
A
4.50
4.90
0.177
0.193
A1
2.34
2.85
0.092
0.112
A2
2.42
2.86
0.095
0.113
b
0.65
0.90
0.026
0.035
b1
0.95
1.38
0.037
0.054
b2
0.95
1.51
0.037
0.059
b3
0.65
1.38
0.026
0.054
b4
0.65
1.51
0.026
0.059
c
0.40
0.63
0.016
0.025
D
15.67
16.15
0.617
0.636
D1
8.97
9.83
0.353
0.387
E
10.00
10.65
0.394
0.419
e 2.54 (BSC)
0.100 (BSC)
e1 5.08
0.200
N3
3
H
28.70
29.75
1.130
1.171
L
12.78
13.75
0.503
0.541
L1
2.83 3.45
0.111
0.136
2.95 3.38
0.116
0.133
Q
3.15 3.50
0.124
0.138
DOCUMENT NO.
Z8B00003319
SCALE 0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
18-03-2016
REVISION
06
Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches
Final Data Sheet
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7AppendixA
Table11RelatedLinks
IFXCoolMOSWebpage:www.infineon.com
IFXDesigntools:www.infineon.com
Final Data Sheet
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RevisionHistory
IPA80R1K4P7
Revision:2018-02-07,Rev.2.1
Previous Revision
Revision Date
2.0 2016-07-05
2.1 2018-02-07
Subjects (major changes since last revision)
Release of final version
Corrected front page text
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2018InfineonTechnologiesAG
AllRightsReserved.
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(“Beschaffenheitsgarantie”).
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informationgiveninthisdocumentwithrespecttosuchapplication.
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
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