BCM856DS (nexperia)
PNP/PNP matched double transistors

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BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number
Package
Nexperia
BCM856BS
SOT363
BCM856BS/DG
BCM856DS
SOT457
BCM856DS/DG
JEITA
SC-88
SC-74
Package configuration
very small
small
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
I AEC-Q101 qualified
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 65 V
- - 100 mA
200 290 450


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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Per device
hFE1/hFE2 hFE matching
VBE1VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
[1] 0.9
1
-
[2] - - 2 mV
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Graphic symbol
654
654
123
001aab555
TR2
TR1
123
sym018
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
BCM856BS
SC-88 plastic surface-mounted package; 6 leads
BCM856BS/DG
BCM856DS
SC-74 plastic surface-mounted package (TSOP6); 6 leads
BCM856DS/DG
Version
SOT363
SOT457
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© Nexperia B.V. 2017. All rights reserved
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*BS
PB*
DS
R9
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
[1] -
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1] -
Per device
Ptot total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
Tamb 25 °C
[1] -
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max Unit
80
65
5
100
200
V
V
V
mA
mA
200 mW
250 mW
300 mW
380 mW
150
+150
+150
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© Nexperia B.V. 2017. All rights reserved
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a) thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
Rth(j-a) thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Conditions
in free air
in free air
Min Typ Max Unit
[1] - - 625 K/W
[1] - - 500 K/W
[1] - - 416 K/W
[1] - - 328 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
IEBO
hFE
VCEsat
VBEsat
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCB = 30 V;
IE = 0 A
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
VEB = 5 V;
IC = 0 A
VCE = 5 V;
IC = 10 µA
VCE = 5 V;
IC = 2 mA
IC = 10 mA;
IB = 0.5 mA
IC = 100 mA;
IB = 5 mA
IC = 10 mA;
IB = 0.5 mA
IC = 100 mA;
IB = 5 mA
Min Typ Max Unit
- - 15 nA
- - 5 µA
- - 100 nA
- 250 -
200 290 450
- 50 200 mV
- 200 400 mV
[1] -
760 -
mV
[1] -
920 -
mV
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBE
base-emitter voltage
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 10 mA
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance
VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
fT
transition frequency
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
NF noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 k;
f = 10 Hz to
15.7 kHz
VCE = 5 V;
IC = 0.2 mA;
RS = 2 k;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2 hFE matching
VBE1VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min
[2] 600
[2] -
-
-
100
-
-
[3] 0.9
[4] -
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
650
-
-
10
175
1.6
3.1
1
-
Max
700
760
2.2
-
-
-
-
-
2
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
0.20
IC
(A)
0.16
0.12
0.08
0.04
IB (mA) = 2.5
2.25
2.0
1.75
1.5
1.25
006aaa540
1.0
0.75
0.5
0.25
600
hFE
400
200
(1)
(2)
(3)
006aaa541
0
0 2 4 6 8 10
VCE (V)
Tamb = 25 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
0
102
101
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 2. DC current gain as a function of collector
current; typical values
1.3
VBEsat
(V)
1.1
0.9
0.7
0.5
0.3
(1)
(2)
(3)
006aaa542
10
VCEsat
(V)
1
101
(1)
(2)
(3)
006aaa543
0.1
101
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
102
101
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© Nexperia B.V. 2017. All rights reserved
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
1
VBE
(V)
0.8
0.6
006aaa544
103
fT
(MHz)
102
006aaa545
0.4
101
1
10
102
103
IC (mA)
10
1
10 102
IC (mA)
Fig 5.
VCE = 5 V; Tamb = 25 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
VCE = 5 V; Tamb = 25 °C
Transition frequency as a function of collector
current; typical values
8
Cc
(pF)
6
006aaa546
15
Ce
(pF)
13
006aaa547
11
4
9
2
7
0
0 2 4 6 8 10
VCB (V)
Fig 7.
f = 1 MHz; Tamb = 25 °C
Collector capacitance as a function of
collector-base voltage; typical values
5
0 2 4 6
VEB (V)
Fig 8.
f = 1 MHz; Tamb = 25 °C
Emitter capacitance as a function of
emitter-base voltage; typical values
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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8. Application information
BCM856BS; BCM856DS
PNP/PNP matched double transistors
VCC
R1
TR1
l out
TR2
Fig 9. Current mirror
006aaa524
9. Test information
V
OUT1
IN1
TR1 TR2
OUT2
IN2
Fig 10. Differential amplifier
V+
006aaa526
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
2.2
1.8
65
4 0.45
0.15
1.1
0.8
3.1
2.7
65
1.1
0.9
4 0.6
0.2
2.2 1.35
2.0 1.15
pin 1
index
3.0 1.7
2.5 1.3
pin 1 index
12
0.65
1.3
Dimensions in mm
3
0.3
0.2
0.25
0.10
06-03-16
12
0.95
1.9
Dimensions in mm
3
0.40
0.25
Fig 11. Package outline SOT363 (SC-88)
Fig 12. Package outline SOT457 (SC-74)
0.26
0.10
04-11-08
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
11. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3 000
10 000
BCM856BS SOT363 4 mm pitch, 8 mm tape and reel; T1
[2] -115
-135
4 mm pitch, 8 mm tape and reel; T2
[3] -125
-165
BCM856BS/DG SOT363 4 mm pitch, 8 mm tape and reel; T1
[2] -115
-135
4 mm pitch, 8 mm tape and reel; T2
[3] -125
-165
BCM856DS SOT457 4 mm pitch, 8 mm tape and reel; T1
[2] -115
-135
4 mm pitch, 8 mm tape and reel; T2
[3] -125
-165
BCM856DS/DG SOT457 4 mm pitch, 8 mm tape and reel; T1
[2] -115
-135
4 mm pitch, 8 mm tape and reel; T2
[3] -125
-165
[1] For further information and the availability of packing methods, see Section 15.
[2] T1: normal taping
[3] T2: reverse taping
12. Soldering
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig 13. Reflow soldering footprint SOT363 (SC-88)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© Nexperia B.V. 2017. All rights reserved
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig 14. Wave soldering footprint SOT363 (SC-88)
3.45
1.95
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 15. Reflow soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
1.475
5.05
1.475
5.3
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 16. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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BCM856BS; BCM856DS
PNP/PNP matched double transistors
13. Revision history
Table 10. Revision history
Document ID
Release date
BCM856BS_BCM856DS_1 20080807
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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PNP/PNP matched double transistors

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BCM856BS; BCM856DS
PNP/PNP matched double transistors
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet Development
Preliminary [short] data sheet Qualification
Product [short] data sheet
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
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BCM856BS; BCM856DS
PNP/PNP matched double transistors
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 8
9 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
14.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Contact information. . . . . . . . . . . . . . . . . . . . . 13
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 07 August 2008




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