FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
FC8V22080L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary battery protection circuits
„ Features
y Low drain-source ON resistance:Rds(on) typ. = 13 mΩVGS = 4.5 V)
y Built-in gate resistor
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
„ Marking Symbol: 4D
„ Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
„ Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
VDS
24
V
Gate-source Voltage
DC *1
Drain Current DC *2
Pulse *3
Total power
dissipation
Ta = 25 °C, DC *1
Ta = 25 °C, DC *2
Ta = 25 °C, t = 10 s *1
Channel Temperature
VGS
ID1
ID2
IDp
PD1
PD2
PD3
Tch
±12
7
10
70
1.0
2.0
1.2
150
V
A
A
A
W
°C
Storage Temperature Range
Tstg -55 to +150 °C
Thermal resistance (ch-a)
Rth(ch-a)
125
°C/W
Note *1 Mounted on FR4 board ( 25.4 mm × 25.4 mm × t0.8 mm )
Copper foil of the drain portion should have a area of 300mm2 or more.
*2 Mounted on Ceramic substrate (70 mm × 70 mm × t1.0 mm).
*3 t = 10 μs, Duty Cycle 1 %
Product Standards
MOS FET
FC8V22080L
2.9
0.3
8765
Unit: mm
0.16
1 2 3 4 (0.81)
0.65
1. Source(FET1) 5. Darin(FET1,2)
2. Gate(FET1) 6. Darin(FET1,2)
3. Source(FET2) 7. Darin(FET1,2)
4. Gate(FET2) 8. Darin(FET1,2)
Panasonic
WMini8-F1
JEITA
SC-115
Code
-
Internal Connection
8 7 65
FET 1
Rg
FET 2
Rg
1 2 34
1. Source(FET1) 5. Darin(FET1,2)
2. Gate(FET1) 6. Darin(FET1,2)
3. Source(FET2) 7. Darin(FET1,2)
4. Gate(FET2) 8. Darin(FET1,2)
Established : 2013-01-10
Revised : 2014-01-08
Page 1 of 5


FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
Product Standards
MOS FET
FC8V22080L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
24
V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
1.0 μA
Gate-source Leakage Current
IGSS VGS = ±8 V, VSS = 0 V
±10 μA
Gate-source Threshold Voltage
Vth ID = 0.33 mA, VDS = 10 V
0.40 0.90 1.4
V
RDS(on)1 ID = 3.5 A, VGS = 4.5 V
9.8 13 16.2
Drain-source On-state Resistance
RDS(on)2 ID = 3.5 A, VGS = 3.8 V
RDS(on)3 ID = 3.5 A, VGS = 3.1 V
10 13.8 18.1
10.8 15.5 22.1
mΩ
RDS(on)4 ID = 3.5 A, VGS = 2.5 V
12 18.5 32.9
Body Diode Forward Voltage
VSD IF = 7.0 A, VGS = 0 V
0.8 1.2
V
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance *1
Turn-on delay Time *1,*2
Rise Time *1,*2
Turn-off delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-source Charge *1
Gate-drain Charge *1
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, VGS = 0 to 4.0 V
ID = 3.5 A
VDD = 10 V, VGS = 4.0 to 0 V
ID = 3.5 A
VDD = 10 V
VGS = 0 to 4.0 V,
ID = 7.0 A
860
85
70
0.3
0.6
2.2
1.1
7.8
2.8
1.8
pF
μs
μs
nC
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Assured by design
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
VDD = 10 V
IS = 3.5 A
Rg
G2
RL = 2.85 Ω
Vout
S2
Vin G1 Rg
4 V 50 Ω
0V
PW = 10 μs
D.C. 1 %
S1
Vin
Vout
90 %
10 %
90 %
90 %
10 % 10 %
td(on) tr
td(off) tf
Page 2 of 5
Established : 2013-01-10
Revised : 2014-01-08


FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
Product Standards
MOS FET
FC8V22080L
Technical Data ( reference )
ID - VDS
RDS(on) - ID
7
VGS = 4.5 V
6
5
4
3 2.0 V
2
3.8 V
3.1 V
2.5 V
100
10
2.5 V
3.1 V
3.8 V
VGS = 4.5 V
1
0 Pulse measurement
0 0.1 0.2 0.3
Drain-source Voltage VDS (V)
ID - VGS
1 Pulse measurement
1 10
DSSraooiunurrcCceeurCcrueurnrrrteeInnDtt I(ISSA)((AA))
RDS(on) - VGS
10 50
ID = 3.5 A
8 40
6
Ta = 85
4
2 25
Pulse measurement
0
0 0.5 1
-40
1.5
Gate-source Voltage VGS (V)
2
30
20
10
0
0
Ta = 85
25
-40
Pulse measurement
246
Gate-source Voltage VGS (V)
8
IF - VF
100
10
Ta = 85
1
0.1
0.01
0
25
-40
Pulse measurement
0.5 1 1.5
Diode Forward Voltage VSD (V)
IGS - VGS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
1.0E-08
1.0E-09
1.0E-10
0
Ta = 85
25
-40
Pulse measurement
3 6 9 12
Gate-source Voltage VGS (V)
15
Page 3 of 5
Established : 2013-01-10
Revised : 2014-01-08


FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
Product Standards
MOS FET
FC8V22080L
Technical Data ( reference )
Dynamic Input/Output Characteristics
Safe Operating Area
5.0
4.5 ID = 7 A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
02
1000
10 V
8V
VDD = 12 V
468
Gate Charge (nC)
Rth - tsw
10
100
Limited by RDS(on)
VGS = 3.8V
10
1
DC
0.1
PW = 10μs
500 μs
1 ms
10 ms
100 ms
1s
0.01
0.1
10
1 10
Drain-source Voltage VDS (V)
100
Thermal Response
100
10
1
0.1
1E-04 0.001
Ta = 25 °C,
Mounted on FR4 board ( 25.4×25.4×t0.8mm ).
Copper foil of the drain portion should have
a area of 300mm2 or more.
0.01 0.1 1 10 100
1000
Pulse Width ( s )
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.1 0.02
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration ( s )
100
Established : 2013-01-10
Revised : 2014-01-08
Page 4 of 5


FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
WMini8-F1
2.9±0.1
0.30+-00..1005
8765
1234
0.65
(5°)
Product Standards
MOS FET
FC8V22080L
0.16+-00..1005
Unit: mm
„Land Pattern (Reference) (Unit: mm)
0.65 0.65 0.65
Established : 2013-01-10
Revised : 2014-01-08
0.4
Page 5 of 5


FC8V22080L (Panasonic)
Gate resistor installed Dual N-channel MOS FET

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Request for your special attention and precautions
in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the
laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit
examples of the products. No license is granted in and to any intellectual property right or other right owned by
Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the
infringement upon any such right owned by any other company which may arise as a result of the use of technical
information de-scribed in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment,
communications equipment, measuring instruments and household appliances), or for specific applications as expressly
stated in this book.
Please consult with our sales staff in advance for information on the following applications, moreover please exchange
documents separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,
automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) in
which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly
jeopardize life or harm the human body.
Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be held
responsible for any damage incurred as a result of or in connection with your using the products described in this book
for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification
and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-
to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating
conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed
the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down
and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,
arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,
for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors
(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We do
not guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.
When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed
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(7) When reselling products described in this book to other companies without our permission and receiving any claim of
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No.010618




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