BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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BZT52-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar power Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-G3-08 to BZT52C75-G3-08
BZT52-G-series
BZT52B2V4-G3-08 to BZT52B75-G3-08
BZT52C2V4-G3-18 to BZT52C75-G3-18
BZT52B2V4-G3-18 to BZT52B75-G3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
9.4 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Diode on ceramic substrate 0.7 mm;
5 mm2 pad areas
Diode on ceramic substrate 0.7 mm;
2.5 mm2 pad areas
Ptot
Ptot
Zener current
See Table “Electrical Characteristics”
Thermal resistance junction to ambient air
Valid provided that electrodes are kept at
ambient temperature
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
VALUE
500
410
300
150
- 65 to + 150
- 55 to + 150
UNIT
mW
mW
K/W
°C
°C
°C
Rev. 1.3, 27-Feb-13
1 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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BZT52-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
REVERSE
RANGE (1)
CURRENT VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE
ZENER
CURRENT (4)
PART NUMBER
MARKING
CODE
VZ at IZT1
IZT1 IZT2
VR at IR
ZZ at IZT1 ZZK at IZT2
VZ
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
V
mA V nA
10-4/°C
mA
MIN. NOM. MAX.
BZT52C2V4-G
Y1
2.2 2.4 2.6 5 1
- 100
85
600 - 9 to - 4 -
-
BZT52C2V7-G
Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134
BZT52C3V0-G
Y3
2.8 3.0 3.2 5 1
- 100 80 (< 95) < 500
- 9 to - 3
98
118
BZT52C3V3-G
Y4
3.1 3.3 3.5 5 1
- 100 80 (< 95) < 500
- 8 to - 3
92
109
BZT52C3V6-G
Y5
3.4 3.6 3.8 5 1
- 100 80 (< 95) < 500
- 8 to - 3
85
100
BZT52C3V9-G
Y6
3.7 3.9 4.1 5 1
- 100 80 (< 95) < 500
- 7 to - 3
77
92
BZT52C4V3-G
Y7
4 4.3 4.6 5 1
- 100 80 (< 95) < 500
- 6 to - 1
71
84
BZT52C4V7-G
Y8
4.4 4.7 5
51
- 100 70 (< 78) < 500
- 5 to + 2
64
76
BZT52C5V1-G
Y9
4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480
- 3 to + 4
56
67
BZT52C5V6-G
YA
5.2 5.6 6
5 1 > 1 100 10 (< 40) < 400
- 2 to + 6
50
59
BZT52C6V2-G
YB
5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200
- 1 to + 7
45
54
BZT52C6V8-G
YC
6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150
+ 2 to + 7
41
49
BZT52C7V5-G
YD
7 7.5 7.9 5 1 > 5 100 4 (< 7)
< 50
+ 3 to + 7
37
44
BZT52C8V2-G
YE
7.7 8.2 8.7 5
1 > 6 100 4.5 (< 7)
< 50
+ 4 to + 7
34
40
BZT52C9V1-G
YF
8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50
+ 5 to + 8
30
36
BZT52C10-G
YG
9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70
+ 5 to + 8
28
33
BZT52C11-G
YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25
30
BZT52C12-G
YI
11.4 12 12.7 5 1 > 9 100 7 (< 20)
< 90
+ 6 to + 9
23
28
BZT52C13-G
YK
12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110
+ 7 to + 9
21
25
BZT52C15-G
YL
13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110
+ 7 to + 9
19
23
BZT52C16-G
YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17
20
BZT52C18-G
YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15
18
BZT52C20-G
YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14
17
BZT52C22-G
YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13
16
BZT52C24-G
YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11
13
BZT52C27-G
YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10
12
BZT52C30-G
YT
28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10
9
10
BZT52C33-G
YU
31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10
8
9
BZT52C36-G
YW
34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10
8
9
BZT52C39-G
YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7
8
BZT52C43-G
YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6
7
BZT52C47-G
YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5
6
BZT52C51-G
Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5
6
BZT52C56-G
Z2
52 56 60 2.5 1
- 100 < 135 (2) < 1000 (3) typ. + 10 (2)
-
-
BZT52C62-G
Z3
58 62 66 2.5 1
- 100 < 150 (2) < 1000 (3) typ. + 10 (2)
-
-
BZT52C68-G
Z4
64 68 72 2.5 1
- 100 < 200 (2) < 1000 (3) typ. + 10 (2)
-
-
BZT52C75-G
Z5
70 75 79 2.5 1
- 100 < 250 (2) < 1000 (3) typ. + 10 (2)
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.3, 27-Feb-13
2 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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BZT52-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
REVERSE
RANGE (1)
CURRENT VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE
ZENER
CURRENT (4)
PART NUMBER
MARKING
CODE
VZ at IZT1
V
IZT1 IZT2
mA
VR at IR ZZ at IZT1 ZZK at IZT2
V nA
VZ
10-4/°C
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
mA
MIN. NOM. MAX.
BZT52B2V4-G
V1 2.35 2.4 2.45 5 1 - 100 85
600 - 9 to - 4 -
-
BZT52B2V7-G
V2 2.65 2.7 2.75 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134
BZT52B3V0-G
V3
2.94 3.0 3.06 5 1
- 100 80 (< 95) < 500
- 9 to - 3
98
118
BZT52B3V3-G
V4
3.23 3.3 3.37 5 1
- 100 80 (< 95) < 500
- 8 to - 3
92
109
BZT52B3V6-G
V5
3.53 3.6 3.67 5 1
- 100 80 (< 95) < 500
- 8 to - 3
85
100
BZT52B3V9-G
V6
3.82 3.9 3.98 5 1
- 100 80 (< 95) < 500
- 7 to - 3
77
92
BZT52B4V3-G
V7
4.21 4.3 4.39 5 1
- 100 80 (< 95) < 500
- 6 to - 1
71
84
BZT52B4V7-G
V8
4.61 4.7 4.79 5 1
- 100 70 (< 78) < 500
- 5 to + 2
64
76
BZT52B5V1-G
V9
5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480
- 3 to + 4
56
67
BZT52B5V6-G
VA
5.49 5.6 5.71 5
1 > 1 100 10 (< 40) < 400
- 2 to + 6
50
59
BZT52B6V2-G
VB
6.08 6.2 6.32 5
1 > 2 100 4.8 (< 10) < 200
- 1 to + 7
45
54
BZT52B6V8-G
VC
6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150
+ 2 to + 7
41
49
BZT52B7V5-G
VD
7.35 7.5 7.65 5 1 > 5 100 4 (< 7)
< 50
+ 3 to + 7
37
44
BZT52B8V2-G
VE
8.04 8.2 8.36 5
1 > 6 100 4.5 (< 7)
< 50
+ 4 to + 7
34
40
BZT52B9V1-G
VF
8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50
+ 5 to + 8
30
36
BZT52B10-G
VG
9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70
+ 5 to + 8
28
33
BZT52B11-G
VH
10.8 11 11.2 5 1 > 8.5 100 6 (< 20)
< 70
+ 5 to + 9
25
30
BZT52B12-G
VI
11.8 12 12.2 5 1 > 9 100 7 (< 20)
< 90
+ 6 to + 9
23
28
BZT52B13-G
VK
12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110
+ 7 to + 9
21
25
BZT52B15-G
VL
14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110
+ 7 to + 9
19
23
BZT52B16-G
VM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17
20
BZT52B18-G
VN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15
18
BZT52B20-G
VO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14
17
BZT52B22-G
VP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13
16
BZT52B24-G
VR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11
13
BZT52B27-G
VS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10
12
BZT52B30-G
VT
29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10
9
10
BZT52B33-G
VU
32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10
8
9
BZT52B36-G
VW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8
9
BZT52B39-G
VX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7
8
BZT52B43-G
VY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6
7
BZT52B47-G
VZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5
6
BZT52B51-G
BZT52B56-G
BZT52B62-G
BZT52B68-G
BZT52B75-G
U1 50 51 52 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5
U2 54.9 56 57.1 2.5 1 - 100 < 135 (2) < 1000 (3) typ. + 10 (2) -
U3
60.8 62 63.2 2.5 1
- 100 < 150 (2) < 1000 (3) typ. + 10 (2)
-
U4 66.6 68 69.4 2.5 1 - 100 < 200 (2) < 1000 (3) typ. + 10 (2) -
U5 73.5 75 76.5 2.5 1 - 100 < 250 (2)) < 1500 (3) typ. + 10 (2) -
6
-
-
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.3, 27-Feb-13
3 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZT52-G-Series
Vishay Semiconductors
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Fig. 1 - Forward Characteristics
1V
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1
18119
2
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
103
7
5
4
R
zj
3 47 + 51
43
2 39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
IZ mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.3, 27-Feb-13
4 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TI j
=
=
25 °C
5 mA
Z
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
ΔVZ 20
ΔTj 15
10
5 mA
IZ = 1 mA
20 mA
5
0
-5
1
18135
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
VZ at IZ = 5 mA
0.3
0.2
0.1
25 15
10
8
7
6.2
5.9
5.6
0
-1
- 0.2
0
18124
5.1
3.6 4.7
20 40 60 80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZT52-G-Series
Vishay Semiconductors
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18136
20 40 60
80 100 V
VZ at IZ = 2 mA
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
7
ΔVZ 6
5
4
3
2
1
0
-1
0
18158
20 40
VZ at IZ = 5 mA
51
43
36
IZ = 5 mA
60 80 100 120 140 °C
Tj
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
1.6
1.4
1.2
ΔVZ 1.0
ΔVZ = rZth x IZ
IZ = 5 mA
VZ >= 56 V; IZ = 2.5 mA
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18159
10
100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 1.3, 27-Feb-13
5 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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BZT52-G-Series
Vishay Semiconductors
V
5 ΔVZ = rzth x IZ
4
ΔVZ
3
2
IZ = 5 mA
1
IZ = 2.5 mA
0
0
18160
20 40 60 80 100 V
VZ at IZ = 5 mA
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
Tj = 25 °C 2.7
3.9 5.6
40
lZ
3.3 4.7
6.8
8.2
30
20
Test
10
current
IZ 5 mA
0
0 1 2 3 4 5 6 7 8 9 10 V
18111
VZ
Fig. 14 - Breakdown Characteristics
mA
30 10
12
Tj = 25 °C
lZ
20
10
Test
current
IZ 5 mA
15
18
22
27
33 36
0
0 10 20 30 40 V
18112
VZ
Fig. 15 - Breakdown Characteristics
18157
Fig. 16 - Breakdown Characteristics
Rev. 1.3, 27-Feb-13
6 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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PACKAGE DIMENSIONS in millimeters (inches): SOD-123
BZT52-G-Series
Vishay Semiconductors
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
Rev. 1.3, 27-Feb-13
7 Document Number: 83340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BZT52C2V7-G (Vishay)
Small Signal Zener Diodes

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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000




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