SMD10U50SP (SamHop)
MOS Controlled Diode

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Sa mHop Microelectronics C orp.
MOS Controlled Diode
SMD10U50SPGreen
Product
Ver 1.1
PRODUCT SUMMARY
VRRM IO VF(MAX) @ 25°C IR(MAX) @ 25°C
50V 10A
0.50V
0.5mA
FEATURES
Low Profile Design for Smart Phone Charger
Ideal for SMT Mounting
Low forward voltage drop
High forward surge capability
Excellent High Temperature Stability
TO-277
Top View
Bottom View
ANODE PINS
BOTTOMSIDE
HEAT SINK
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
VRM
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
IO Average Rectified Output Current
I FSM
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
EAS
Non-Repetitive Avalanche Energy
(TJ= 25°C,IAS = 10,L = 5mH)
PARM
Repetitive Peak Avalanche Energy
Value
50
50
50
35
10
120
170
24000
Unit
V
V
V
V
A
A
mJ
W
THERMAL CHARACTERISTICS
Symbol
R JA
TJ
T STG
Parameter
Thermal Resistance, Junction-to-Ambient
Operating Temperature Range
Storage Temperature Range
Value
70
-55 to 150
-55 to 175
Unit
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
VF
Parameter
Forward Voltage Drop
IR Leakage Current
Conditions
IF = 10A, TJ = 25°C
IF = 10A, TJ = 125°C
VR = 50V, TJ = 25°C
VR = 50V, TJ = 125°C
CT Total Capacitance
VR = 50V, f = 1MHz
Min
Details are subject to change without notice.
1
Typ Max Unit
0.46 0.50
V
0.44 0.49
V
150 500 uA
100 mA
155 pF
Apr,14,2015
www.samhop.com.tw


SMD10U50SP (SamHop)
MOS Controlled Diode

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SMD10U50SP
Ver 1.1
100
10
TA=150 C
1 125 C
85 C
0.1
25 C -55 C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5
VF, Instantaneous Forward Voltage (V)
Figure 1. Typical Forward Characteristics
1000000
100000
10000
1000
100
10
1
0.1
0.01
1
TA=150 C
10 20
125 C
85 C
25 C
-55 C
30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
100000
10000
f = 1MHz
1000
100
0
10 20 30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 3. Total Capacitance vs. Reverse Voltage
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
IF(AV) Average Forward Current (A)
Figure 4. Forward Power Dissipation
12
Based on Lead Temp (°C)
10
8
Note 1
6
4
2
0
0 25 50 75 100 125 150
TC, Case Temp (°C)
Figure 4. Forward Power Dissipation
100000
10000
1000
100
0 0.1 1 10 100 1000 10000
TP, Pulse Duration (uS)
Figure 6. Maximum Avalanche Power Curve
Note : 1.Device mounted on FR-4 substrate, 2oz copper.
2
Apr,14,2015
www.samhop.com.tw


SMD10U50SP (SamHop)
MOS Controlled Diode

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SMD10U50SP
PACKAGE OUTLINE DIMENSIONS
TO-277
HE
E
L1
L2
Ver 1.1
L
SYMBOLS
HE
E
D
B1
B2
A
C
L
L1
L2
L3
D1
E1
MILLIMETERS
MIN.
MAX.
6.40 6.60
5.60 5.80
4.10 4.30
1.70 1.90
0.80 1.00
1.05 1.20
0.30 0.40
0.85 1.10
4.20 4.40
3.52 Typ.
1.10 1.40
3.00 3.30
1.86 Typ.
L3
Mounting Pad Layout (unit:mm)
4.6 1.3
1
Apr,14,2015
3 www.samhop.com.tw


SMD10U50SP (SamHop)
MOS Controlled Diode

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SMD10U50SP
TOP MARKING DEFINITION
TO-277
Ver 1.1
10U50SP
XXXXXX
Product No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
Assembly House
Apr,14,2015
4 www.samhop.com.tw




SMD10U50SP.pdf
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