1N60 (VOLTTS)
Shottky Barrier Diode

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Wuxi Xuyang Electronics Co Ltd
FEATURES
1. High reliability
2. Low reverse current and low forward voltage
APPLICATIONS
Low current certification and high speed switching.
1N60-1N60P
Shottky Barrier Diode
CONSTRUCTION
Silicon epitaxial planar.
ABSOLUTE MAXIMUM RATINGS
Tj=25ºC
Parameter
Repetitive peak reverse voltage
Peak forward surge current
Forward continuous current
Storage temperature range
Test Conditions
tp =< 1s
Ta = 25ºC
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
V RRM
V RRM
I FSM
I FSM
IF
IF
Tstg
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
ºC
MAXIMUM THERMAL RESISTANCE
Tj=25ºC
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
250
Unti
K/W
Pag.1/2
Rua Juquiá, 217 - Vila Antonieta - S.B.C. - Cep: 09629-040 - SP - Brasil
Tel: (11) 4367-7411 - Fax: (11) 4367-7416 - www.voltts.com.br - voltts@voltts.com.br


1N60 (VOLTTS)
Shottky Barrier Diode

No Preview Available !

Click to Download PDF File for PC

Wuxi Xuyang Electronics Co Ltd
ABSOLUTE MAXIMUM RATINGS
1N60-1N60P
Shottky Barrier Diode
T =2j5ºC
Parameter
Test Conditions
Repetitive peak reverse voltage
IF = 1mA
IF = 30mA
IF = 200mA
Peak forward surge current
VR = 15V
Forward continuous current
Storage temperature range
VR = 1V, f = 1MHz
VR = 10V, f = 1MHz
IF=IR=1mA Irr=1mA RC=100
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VF
VF
VF
VF
IR
IR
CJ
CJ
t rr
Min
Typ
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
Max
0.5
0.5
1.0
1.0
0.5
1.0
1.0
Unit
V
V
V
V
mA
mA
pF
pF
ns
DIMENSION IN mm
Standard Glass Case
JEDEC DO 35
Pag.2/2
Rua Juquiá, 217 - Vila Antonieta - S.B.C. - Cep: 09629-040 - SP - Brasil
Tel: (11) 4367-7411 - Fax: (11) 4367-7416 - www.voltts.com.br - voltts@voltts.com.br




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