BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 123
Type
BSS 123
BSS 123
VDS
100 V
ID
0.17 A
Ordering Code
Q62702-S512
Q67000-S245
Pin 1
G
Pin 2
S
RDS(on)
6
Package
SOT-23
Tape and Reel Information
E6327
E6433
Marking
SAs
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 28 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
100
100
± 14
± 20
0.17
0.68
0.36
Unit
V
A
W
Semiconductor Group
1
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Values
Unit
-55 ... + 150 °C
-55 ... + 150
350
K/W
285
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.17 A
V(BR)DSS
100
VGS(th)
0.8
IDSS
IGSS
RDS(on)
-
-
-
-
-
-
1.5
0.1
2
10
3
4.5
-
2
1
60
50
6
10
V
µA
nA
Semiconductor Group
2
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 0.17 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
0.08
-
-
-
-
-
-
-
0.2
65
10
4
5
5
10
12
-
85
15
6
8
8
13
16
Unit
S
pF
ns
Semiconductor Group
3
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
ISM
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.34 A, Tj = 25 °C
-
-
-
-
-
0.85
0.17
0.68
1.3
Unit
A
V
Semiconductor Group
4
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Power dissipation
Ptot = ƒ(TA)
0.40
W
Ptot 0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS 10 V
0.18
A
ID 0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
120
V
116
V 114
(BR)DSS
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj
5 Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.38
A
l
Ptot = 0Wkjih g f
e
0.32
ID
0.28
0.24
0.20
0.16
0.12
0.08
VGS [V]
a 2.0
b 2.5
c 3.0
d d 3.5
e 4.0
f 4.5
g 5.0
ch
6.0
i 7.0
j 8.0
k 9.0
l 10.0
b
0.04
a
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
19
16
RDS (on)
14
a
bc
12
10
8
6d
4
2
VGS [V] =
ab
c
d
e
f
2.05 3.0 3.5 4.0 4.5 5.0
0
e
f
hj
i
g
k
ghi j k
6.0 7.0 8.0 9.0 10.0
0.00 0.04 0.08 0.12 0.16 0.20 A 0.28
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
1.0
A
ID 0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.40
S
gfs
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 A
ID
0.8
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.17 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
15 4.6
V
13 4.0
RDS (on) 12
11
10
VGS(th) 3.6
3.2
9 2.8
8 98%
7
6
5
2.4
98%
2.0
typ
1.6
4
3
2
1
0
-60 -20
typ
20 60
100 °C 160
Tj
1.2
0.8
0.4
0.0
-60
-20
2%
20 60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 0
pF
C
10 2
A
I
F
Ciss
10 -1
10 1
Coss
Crss
10 0
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -2
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -3
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Sep-13-1996


BSS123 (Siemens Semiconductor Group)
Small-Signal Transistor

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BSS 123
Package outlines
SOT-23
Dimensions in mm
Semiconductor Group
8
Sep-13-1996




BSS123.pdf
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