BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

® BUZ10
N - CHANNEL 50V - 0.06- 23A TO-220
STripFETMOSFET
T YPE
VDSS
RDS(o n)
ID
BUZ 10
50 V < 0.07 23 A
s TYPICAL RDS(on) = 0.06
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
IDM Drain Current (pulsed)
Ptot T otal Dissipat ion at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
February 2000
Va l u e
50
50
± 20
23
92
75
-65 to 175
175
E
55/ 15 0/ 56
Un it
V
V
V
A
A
W
oC
oC
1/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

BUZ10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2. 0
62.5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Valu e
10
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing Tj = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
50
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 14 A
Resistance
Min.
2.1
Typ.
3
0.06
Max.
4
0.07
Unit
V
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V ID = 14 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
6
Typ.
11
Max.
Unit
S
900 pF
130 pF
40 pF
SWITCHING
Symbo l
td(on)
tr
td(off)
tf
P ar am et e r
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
RGS = 4.7
ID = 10 A
VGS = 10 V
Min.
Typ.
20
45
48
10
Max.
Unit
ns
ns
ns
ns
2/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM
VSD ()
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
ISD = 46 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 23 A
VDD = 30 V
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
di/dt = 100 A/µs
Tj = 150 oC
BUZ10
Min.
Typ.
Max.
23
92
Unit
A
A
50
0.17
1.9
V
ns
µC
Safe Operating Area
Thermal Impedance
3/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

BUZ10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

Normalized Gate Threshold Voltage vs
Temperature
BUZ10
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

BUZ10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
BUZ10
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
7/8


BUZ10 (STMicroelectronics)
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

Click to Download PDF File for PC

BUZ10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all informaiton previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
8/8 .




BUZ10.pdf
Click to Download PDF File