IPW50R250CP (Infineon)
Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPW50R250CP
550 V
0.250
27 nC
PG-TO247
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM Stages for ATX, Notebook adapter, PDP and LCD TV
Type
IPW50R250CP
Package
PG-TO247
Marking
5R250P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=100 °C
T C=25 °C
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
13
9
31
345
0.52
5.2
50
±20
±30
114
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPW50R250CP
Value
7.8
31
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.52 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 °C
V GS=10 V, I D=7.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.22 0.25
0.54
2.2
-
-
Rev. 2.0
page 2
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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Parameter
Dynamic characteristics
Symbol Conditions
IPW50R250CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 400 V
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G= 23.1
-
-
-
-
-
-
-
-
1420
63
60
130
35
14
80
11
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
-
-
-
-
6 - nC
9-
27 36
5.2 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=7.8 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 300 - ns
- 3.1 - µC
- 23 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) I SDI D, di /dt 200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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1 Power dissipation
P tot=f(T C)
125
100
75
50
25
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
IPW50R250CP
limited by on-state
resistance
101
1 µs
10 µs
100 µs
1 ms
DC
10 ms
100
0
0 25 50 75 100 125 150 175
T C [°C]
10-1
100
101 102
V DS [V]
3 Max. transient thermal impedance
Z(thJC)=f(tp);
parameter: D=t p/T
101
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
35
20 V
10 V
30 8 V
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
Rev. 2.0
10-4
10-3
10-2
t p [s]
25
20
15
10
5
0
10-1
0
page 4
7V
6V
5.5 V
5V
4.5 V
5 10 15
V DS [V]
103
20
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
25
20
7V
15
10
5
20 V
10 V
8V 6V
IPW50R250CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.5
10 V
7V
1.2 6.5 V
5.5 V
5V
4.5 V
0.9
0.6
6V
5.5 V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=7.8 A; V GS=10 V
0.7
0.6
0.5
0.4
0.3
98 %
typ
0.2
0.1
-60 -20 20 60 100 140
T j [°C]
0.3
20 0
10 20
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
45
40
35
30
25
20
15
10
5
0
180 0 2 4 6
V GS [V]
Rev. 2.0
page 5
30 40
25 °C
150 °C
8 10
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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9 Typ. gate charge
V GS=f(Q gate); I D=7.8 A pulsed
parameter: V DD
10
8
100 V
6
400 V
4
2
IPW50R250CP
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
101
150 °C
25 °C
25 °C, 98%
150 °C, 98%
100
0
0 5 10 15 20 25 30
Q gate [nC]
10-1
0
0.5 1 1.5
V SD [V]
11 Avalanche energy
E AS=f(T j); I D=5.2 A; V DD=50 V
12 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=0.25 mA
2
350
300
250
200
150
100
50
0
25
Rev. 2.0
75 125
T j [°C]
580
560
540
520
500
480
460
440
175 -60 -20 20 60 100 140 180
T j [°C]
page 6
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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13 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
14 Typ. Coss stored energy
E oss= f(V DS)
IPW50R250CP
104
Ciss
103
Coss
102
101
Crss
100
0
100 200 300 400 500
V DS [V]
7
6
5
4
3
2
1
0
0 100 200 300 400 500
V DS [V]
Rev. 2.0
page 7
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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Definition of diode switching characteristics
IPW50R250CP
Rev. 2.0
page 8
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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PG-TO247 Outlines
IPW50R250CP
Rev. 2.0
page 9
2007-11-07


IPW50R250CP (Infineon)
Power Transistor

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IPW50R250CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2007-11-07




IPW50R250CP.pdf
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