R1045NC28L (IXYS)
Distributed Gate Thyristor

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Date:- 17th October, 2016
Data Sheet Issue:- A1
Distributed Gate Thyristor
Types R1045NC28L & R1045NC32L
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (continuous), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
2800-3200
2800-3200
2800-3200
2900-3200
UNITS
V
V
V
V
MAXIMUM
LIMITS
1055
700
405
2125
1745
12.5
14.0
781×103
980×103
300
600
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 1 of 13
October 2016


R1045NC28L (IXYS)
Distributed Gate Thyristor

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Characteristics
Distributed Gate Thyristor types R1045NC28L & R1045NC32L
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.5 ITM=2000A
- 3.0 ITM=3150A
- 1.64
- 0.43
- - VD=80% VDRM, Linear ramp, Gate o/c
- 100 Rated VDRM
- 100 Rated VRRM
-3
Tj=25°C
- 300
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.5 1.0 VD=67% VDRM, ITM=1000A, di/dt=10A/µs,
1.5 3.0 IFG=2A, tr=0.5µs, Tj=25°C
950 1100
460 - ITM=1000A, tp=1000µs, di/dt=60A/µs,
85 - Vr=50V
11 -
-
50
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
65
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.024 Double side cooled
- 0.048 Single side cooled
- 26
510 -
UNITS
V
V
V
m
V/s
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 2 of 13
October 2016


R1045NC28L (IXYS)
Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
28
30
32
VDRM VDSM VRRM
V
2800
3000
3200
VRSM
V
2900
3100
3300
VD VR
DC V
1650
1750
1800
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed
300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device
current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1)
should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise,
an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’
current IG should remain flowing for the same duration as the anode current and have a magnitude in the
order of 1.5 times IGT.
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 3 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings
shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max
1
tpulsetq tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the
frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
 WAV EP f and TSINK(max .) 125 WAV RthJ Hs
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150s integration time i.e.
(iii)
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 4 of 13
150s
Qrr irr.dt
0
K Factor t1
t2
October 2016


R1045NC28L (IXYS)
Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated
from the following:
 TSINK(new) TSINK(original) E k f RthJ Hs
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W(TOT) W (original) E f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design purposes,
the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
 TSINKnewTSINKoriginalE Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to
a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67%
of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained
from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 4 Vr
CS
di
dt
Vr = Commutating source voltage
Where: CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 5 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 8 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms
of IT given below:
VT A B lnIT C IT D IT
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients 125°C Coefficients
A 1.648959
B 0.3878319
C 4.8967×104
D -0.0524557
2.641502
-0.2123417
3.4813×104
0.01736376
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 6 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
16.2 D.C. Thermal Impedance Calculation
rt
pn
rp
1
t
ep

p1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
p = Time Constant of rth term.
Term
rp
p
Term
rp
p
1
0.01248
0.884
D.C. Double Side Cooled
23
6.216×10-3
1.939×10-3
0.1221
0.03612
4
1.527×10-3
7.612×10-3
5
1.038×10-3
1.93×10-3
1
0.02836
6.345
2
5.574×10-3
3.55
D.C. Single Side Cooled
34
3.588×10-3 6.222×10-3
0.582
0.132
5
2.04×10-3
0.0496
6
1.675×10-3
0.01015
7
1.258×10-3
2.225×10-3
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 7 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Curves
Figure 1 - On-state characteristics of Limit device
10000
R1045NC28L to 32L
Issue A1
Tj = 25 C
Tj = 125 C
Figure 2 - Transient thermal impedance
0.1
R1045NC28L to 32L
Issue A1
SSC 0.048KW
DSC 0.024K/W
0.01
1000
0.001
0.0001
100
0
12345
Instantaneous on-state voltage - VT (V)
6
0.00001
0.00001
0.001
0.1
Time (s)
10
Figure 3 - Gate characteristics - Trigger limits
10
R1045NC28L to 32L
Issue A1
9 Tj=25 C
8
7
Max VG dc
6
Figure 4 - Gate characteristics - Power curves
30
R1045NC28L to 32L
Issue A1
Tj=25 C
25
Max VG dc
20
5 15
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6
Gate Trigger Current - IGT (A)
0.8
10
5
0
0
PG 5W dc
PG Max 30W dc
Min VG dc
2468
Gate Trigger Current - IGT (A)
10
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 8 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Figure 5 - Total recovered charge, Qrr
10000
R1045NC28L to 32L
Issue A1
Tj = 125 C
2000A
1500A
1000A
500A
1000
Figure 6 - Recovered charge, Qra (50% chord)
10000
R1045NC28L to 32L
Issue A1
Tj = 125 C
1000
2000A
1500A
1000A
500A
100
1
10 100
Commutation rate - di/dt (A/µs)
1000
100
1
10 100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
1000
R1045NC28L to 32L
Issue A1
Tj = 125 C
2000A
1500A
1000A
500A
Figure 8 - Maximum recovery time, trr (50% chord)
100
R1045NC28L to 32L
Issue A1
Tj = 125 C
100 10
2000A
1500A
1000A
500A
10
1
10 100
Commutation rate - di/dt (A/µs)
1000
1
1 10 100 1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 9 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Figure 9 Reverse recovery energy per pulse
10000
R1045NC28L to 32L
Issue A1
Tj = 125 C
CS=2µF & RS=15
Vr = 67% VRRM
Figure 10 - Sine wave energy per pulse
1.00E+02
R1045NC28L to 32L
Issue A1
Tj=125 C
1.00E+01
2000A
1500A
1000A
500A
4kA
3kA
1.00E+00
2kA
1kA
1.00E-01
500A
1000
1
10 100
Commutation rate - di/dt (A/µs)
1000
250A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 11 - Sine wave frequency ratings
1.00E+05
500A
R1045NC28L to 32L
Issue A1
THs=55 C
100% Duty Cycle
1kA
1.00E+04
2kA
1.00E+03
3kA
4kA
Figure 12 - Sine wave frequency ratings
1.00E+05
R1045NC28L to 32L
Issue A1
500A
100% Duty Cycle
THs=85 C
1.00E+04
1kA
2kA
1.00E+03 3kA
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 10 of 13
October 2016


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Distributed Gate Thyristor

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Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Figure 13 - Square wave frequency ratings
1.00E+05
500A
R1045NC28L to 32L
Issue A1
THs=55 C
di/dt=100A/µs
100% Duty Cycle
1kA
1.00E+04
1.00E+03
2kA
3kA
4kA
Figure 14 - Square wave frequency ratings
1.00E+05
500A
R1045NC28L to 32L
Issue A1
THs=55 C
di/dt=500A/µs
100% Duty Cycle
1.00E+04 1kA
2kA
1.00E+03
3kA
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 15 - Square wave frequency ratings
1.00E+05
250A
R1045NC28L to 32L
Issue A1
THs=85 C
di/dt=100A/µs
500A
1.00E+04 1kA
100% Duty Cycle
Figure 16 - Square wave frequency ratings
1.00E+05
250A
R1045NC28L to 32L
Issue A1
THs=85 C
di/dt=500A/µs
100% Duty Cycle
1.00E+04
1kA
1.00E+03
2kA
3kA
4kA
1.00E+02
2kA
1.00E+03
3kA
4kA
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
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Figure 17 - Square wave energy per pulse
1.00E+03
1.00E+02
R1045NC28L to 32L
Issue A1
di/dt=100A/µs
Tj=125 C
1.00E+01
1.00E+00
4kA
3kA
2kA
1kA
1.00E-01 500A
1.00E-02
250A
Distributed Gate Thyristor types R1045NC28L & R1045NC32L
Figure 18 - Square wave energy per pulse
1.00E+03
R1045NC28L to 32L
Issue A1
di/dt=500A/µs
Tj=125 C
1.00E+02
4kA
3kA
2kA
1.00E+01
1.00E+00
1.00E-01
1kA
500A
250A
1.00E-03
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
100000
Gate may temporarily lose control of conduction angle
I2t: VRRM10V
1.00E+07
I2t: 60% VRRM
10000
1.00E+06
ITSM: VRRM10V
1000
1 3 5 10
Duration of surge (ms)
ITSM: 60% VRRM
R1045NC28L to 32L
Issue A1
Tj (initial) = 125 C
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
1.00E+05
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
Page 12 of 13
October 2016


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Outline Drawing & Ordering Information
Distributed Gate Thyristor types R1045NC28L & R1045NC32L
ORDERING INFORMATION
(Please quote 10 digit code as below)
R1045
NC

Fixed
Type Code
Fixed
Outline Code
Fixed Voltage Code
VDRM/100
28 & 32
Typical order code: R1045NC32L 3200V VDRM, & VRRM 65µs tq, 27.7mm clamp height capsule
tq Code
L=65µs
IXYS Semiconductor GmbH
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D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
www.ixysuk.com
www.ixys.com
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: service@ixyslongbeach.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
© IXYS UK Westcode Ltd.
Data Sheet. Types R1045NC28L & R1045NC32L Issue A1
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October 2016




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