S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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S-808xxC Series
www.sii-ic.com
© SII Semiconductor Corporation, 2001-2015
SUPER-SMALL PACKAGE HIGH-PRECISION
VOLTAGE DETECTOR
Rev.6.2_01
The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The
detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
output, are available. Super-low current consumption and miniature package lineup can meet demand from the
portable device applications.
Features
Super-low current consumption 1.3 μA typ. (detection voltage1.4 V, at VDD = 1.5 V)
0.8 μA typ. (detection voltage1.5 V, at VDD = 3.5 V)
High-precision detection voltage ±2.0%
Operating voltage range
0.65 V to 5.0 V (detection voltage1.4 V)
0.95 V to 10.0 V (detection voltage1.5 V)
Hysteresis characteristics
5% typ.
Detection voltage
0.8 V to 6.0 V (0.1 V step)
Output form
Nch open-drain output (Active Low)
CMOS output (Active Low)
Lead-free, Sn 100%, halogen-free*1
*1. Refer to “Product Name Structure” for details.
Applications
Battery checkers
Power failure detectors
Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote
controllers.
Constant voltage power monitor for cameras, video equipments and communication devices.
Power monitor for microcomputers and reset for CPUs.
Packages
SC-82AB
SOT-23-5
SOT-89-3
SNT-4A
TO-92
1


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
Block Diagrams
1. Nch Open-drain Output Products
VDD
*1
+
VSS
VREF
*1. Parasitic diode
2. CMOS Output Products
Figure 1
VDD
*1 +
VSS
VREF
*1. Parasitic diode
Figure 2
OUT
*1
*1
OUT
*1
2


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request.
Refer to the “1. Product Name” for the construction of the product name, “2. Packages” regarding the
package drawings and “3. Product Name List” for the full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5, SOT-89-3
S - 808xx C x xx - xxx T2 x
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
IC direction in tape specifications*1
Product code*2
Package code
NB: SC-82AB
MC: SOT-23-5
UA: SOT-89-3
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 1 and 3 in the “3. Product Name List
1-2. SNT-4A
S - 808xx C x PF - xxx TF U
Environmental code
U: Lead-free (Sn 100%), halogen-free
IC direction in tape specifications*1
Product code*2
Package code
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 2 and 4 in the “3. Product Name List
3


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
1-3. TO-92
S - 808xx C x Y - x 2 - U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Packing form
B: Bulk
Z: Tape and ammo
Package code
Y: TO-92
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
15 to 60
(e.g. When the detection voltage is 1.5 V,
it is expressed as 15.)
Rev.6.2_01
2. Packages
Package name
Package
SC-82AB
NP004-A-P-SD
SOT-23-5
SOT-89-3
SNT-4A
TO-92 (Bulk)
TO-92 (Tape and ammo)
MP005-A-P-SD
UP003-A-P-SD
PF004-A-P-SD
YS003-D-P-SD
YZ003-E-P-SD
Tape
NP004-A-C-SD
NP004-A-C-S1
MP005-A-C-SD
UP003-A-C-SD
PF004-A-C-SD
YZ003-E-C-SD
Drawing code
Reel
NP004-A-R-SD
MP005-A-R-SD
UP003-A-R-SD
PF004-A-R-SD
Zigzag
YZ003-E-Z-SD
Land
PF004-A-L-SD
4


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
3. Product Name List
3-1. Nch Open-drain Output Products
Table 1 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*1
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
SC-82AB
S-80808CNNB-B9MT2x
S-80809CNNB-B9NT2x
S-80810CNNB-B9OT2x
S-80811CNNB-B9PT2x
S-80812CNNB-B9QT2x
S-80813CNNB-B9RT2x
S-80814CNNB-B9ST2x
S-80815CNNB-B8AT2x
S-80816CNNB-B8BT2x
S-80817CNNB-B8CT2x
S-80818CNNB-B8DT2x
S-80819CNNB-B8ET2x
S-80820CNNB-B8FT2x
S-80821CNNB-B8GT2x
S-80822CNNB-B8HT2x
S-80823CNNB-B8IT2x
S-80824CNNB-B8JT2x
S-80825CNNB-B8KT2x
S-80826CNNB-B8LT2x
S-80827CNNB-B8MT2x
S-80828CNNB-B8NT2x
S-80829CNNB-B8OT2x
S-80830CNNB-B8PT2x
S-80831CNNB-B8QT2x
S-80832CNNB-B8RT2x
S-80833CNNB-B8ST2x
S-80834CNNB-B8TT2x
S-80835CNNB-B8UT2x
S-80836CNNB-B8VT2x
S-80837CNNB-B8WT2x
S-80838CNNB-B8XT2x
S-80839CNNB-B8YT2x
SOT-23-5
S-80815CNMC-B8AT2x
S-80816CNMC-B8BT2x
S-80817CNMC-B8CT2x
S-80818CNMC-B8DT2x
S-80819CNMC-B8ET2x
S-80820CNMC-B8FT2x
S-80821CNMC-B8GT2x
S-80822CNMC-B8HT2x
S-80823CNMC-B8IT2x
S-80824CNMC-B8JT2x
S-80825CNMC-B8KT2x
S-80826CNMC-B8LT2x
S-80827CNMC-B8MT2x
S-80828CNMC-B8NT2x
S-80829CNMC-B8OT2x
S-80830CNMC-B8PT2x
S-80831CNMC-B8QT2x
S-80832CNMC-B8RT2x
S-80833CNMC-B8ST2x
S-80834CNMC-B8TT2x
S-80835CNMC-B8UT2x
S-80836CNMC-B8VT2x
S-80837CNMC-B8WT2x
S-80838CNMC-B8XT2x
S-80839CNMC-B8YT2x
SOT-89-3
S-80815CNUA-B8AT2x
S-80816CNUA-B8BT2x
S-80817CNUA-B8CT2x
S-80818CNUA-B8DT2x
S-80819CNUA-B8ET2x
S-80820CNUA-B8FT2x
S-80821CNUA-B8GT2x
S-80822CNUA-B8HT2x
S-80823CNUA-B8IT2x
S-80824CNUA-B8JT2x
S-80824KNUA-D2BT2x*2
S-80825CNUA-B8KT2x
S-80826CNUA-B8LT2x
S-80827CNUA-B8MT2x
S-80828CNUA-B8NT2x
S-80829CNUA-B8OT2x
S-80830CNUA-B8PT2x
S-80831CNUA-B8QT2x
S-80832CNUA-B8RT2x
S-80833CNUA-B8ST2x
S-80834CNUA-B8TT2x
S-80835CNUA-B8UT2x
S-80836CNUA-B8VT2x
S-80837CNUA-B8WT2x
S-80838CNUA-B8XT2x
S-80839CNUA-B8YT2x
5


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
Table 1 (2/2)
Detection Hysteresis width
voltage range
(Typ.)
SC-82AB
SOT-23-5
SOT-89-3
4.0 V±2.0 %
0.200 V
S-80840CNNB-B8ZT2x S-80840CNMC-B8ZT2x S-80840CNUA-B8ZT2x
4.1 V±2.0 %
0.205 V
S-80841CNNB-B82T2x S-80841CNMC-B82T2x S-80841CNUA-B82T2x
4.2 V±2.0 %
0.210 V
S-80842CNNB-B83T2x S-80842CNMC-B83T2x S-80842CNUA-B83T2x
4.3 V±2.0 %
0.215 V
S-80843CNNB-B84T2x S-80843CNMC-B84T2x S-80843CNUA-B84T2x
4.4 V±2.0 %
0.220 V
S-80844CNNB-B85T2x S-80844CNMC-B85T2x S-80844CNUA-B85T2x
4.5 V±2.0 %
0.225 V
S-80845CNNB-B86T2x S-80845CNMC-B86T2x S-80845CNUA-B86T2x
4.6 V±2.0 %
0.230 V
S-80846CNNB-B87T2x S-80846CNMC-B87T2x S-80846CNUA-B87T2x
4.6 V± 0.10 V 0.10 V max.
S-80846KNUA-D2CT2x*3
4.7 V±2.0 %
0.235 V
S-80847CNNB-B88T2x S-80847CNMC-B88T2x S-80847CNUA-B88T2x
4.8 V±2.0 %
0.240 V
S-80848CNNB-B89T2x S-80848CNMC-B89T2x S-80848CNUA-B89T2x
4.9 V±2.0 %
0.245 V
S-80849CNNB-B9AT2x S-80849CNMC-B9AT2x S-80849CNUA-B9AT2x
5.0 V±2.0 %
0.250 V
S-80850CNNB-B9BT2x S-80850CNMC-B9BT2x S-80850CNUA-B9BT2x
5.1 V±2.0 %
0.255 V
S-80851CNNB-B9CT2x S-80851CNMC-B9CT2x S-80851CNUA-B9CT2x
5.2 V±2.0 %
0.260 V
S-80852CNNB-B9DT2x S-80852CNMC-B9DT2x S-80852CNUA-B9DT2x
5.3 V±2.0 %
0.265 V
S-80853CNNB-B9ET2x S-80853CNMC-B9ET2x S-80853CNUA-B9ET2x
5.4 V±2.0 %
0.270 V
S-80854CNNB-B9FT2x S-80854CNMC-B9FT2x S-80854CNUA-B9FT2x
5.5 V±2.0 %
0.275 V
S-80855CNNB-B9GT2x S-80855CNMC-B9GT2x S-80855CNUA-B9GT2x
5.6 V±2.0 %
0.280 V
S-80856CNNB-B9HT2x S-80856CNMC-B9HT2x S-80856CNUA-B9HT2x
5.7 V±2.0 %
0.285 V
S-80857CNNB-B9IT2x
S-80857CNMC-B9IT2x
S-80857CNUA-B9IT2x
5.8 V±2.0 %
0.290 V
S-80858CNNB-B9JT2x S-80858CNMC-B9JT2x S-80858CNUA-B9JT2x
5.9 V±2.0 %
0.295 V
S-80859CNNB-B9KT2x S-80859CNMC-B9KT2x S-80859CNUA-B9KT2x
6.0 V±2.0 %
0.300 V
S-80860CNNB-B9LT2x S-80860CNMC-B9LT2x S-80860CNUA-B9LT2x
*1. Describes the release voltage.
*2. Refer to the Table 18 in “Electricala Characteristics for Customized Products” for electrical characteristics.
*3. Refer to the Table 20 in “Electricala Characteristics for Customized Products” for electrical characteristics
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
6


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.5 V±2.0 %
4.6 V±2.0 %
4.6 V±0.10 V
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*2
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
0.225 V
0.230 V
0.10 V max.
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
Table 2 (1/2)
SNT-4A
S-80808CNPF-B9MTFU
S-80809CNPF-B9NTFU
S-80810CNPF-B9OTFU
S-80811CNPF-B9PTFU
S-80812CNPF-B9QTFU
S-80813CNPF-B9RTFU
S-80814CNPF-B9STFU
S-80815CNPF-B8ATFU
S-80816CNPF-B8BTFU
S-80817CNPF-B8CTFU
S-80818CNPF-B8DTFU
S-80819CNPF-B8ETFU
S-80820CNPF-B8FTFU
S-80821CNPF-B8GTFU
S-80822CNPF-B8HTFU
S-80823CNPF-B8ITFU
S-80824CNPF-B8JTFU
S-80825CNPF-B8KTFU
S-80826CNPF-B8LTFU
S-80827CNPF-B8MTFU
S-80828CNPF-B8NTFU
S-80829CNPF-B8OTFU
S-80830CNPF-B8PTFU
S-80831CNPF-B8QTFU
S-80832CNPF-B8RTFU
S-80833CNPF-B8STFU
S-80834CNPF-B8TTFU
S-80835CNPF-B8UTFU
S-80836CNPF-B8VTFU
S-80837CNPF-B8WTFU
S-80838CNPF-B8XTFU
S-80839CNPF-B8YTFU
S-80840CNPF-B8ZTFU
S-80841CNPF-B82TFU
S-80842CNPF-B83TFU
S-80843CNPF-B84TFU
S-80844CNPF-B85TFU
S-80845CNPF-B86TFU
S-80846CNPF-B87TFU
S-80847CNPF-B88TFU
S-80848CNPF-B89TFU
S-80849CNPF-B9ATFU
S-80850CNPF-B9BTFU
S-80851CNPF-B9CTFU
TO-92*1
S-80815CNY-n2-U
S-80816CNY-n2-U
S-80817CNY-n2-U
S-80818CNY-n2-U
S-80819CNY-n2-U
S-80820CNY-n2-U
S-80821CNY-n2-U
S-80822CNY-n2-U
S-80823CNY-n2-U
S-80824CNY-n2-U
S-80824KNY-n2-U*3
S-80825CNY-n2-U
S-80826CNY-n2-U
S-80827CNY-n2-U
S-80828CNY-n2-U
S-80829CNY-n2-U
S-80830CNY-n2-U
S-80831CNY-n2-U
S-80832CNY-n2-U
S-80833CNY-n2-U
S-80834CNY-n2-U
S-80835CNY-n2-U
S-80836CNY-n2-U
S-80837CNY-n2-U
S-80838CNY-n2-U
S-80839CNY-n2-U
S-80840CNY-n2-U
S-80841CNY-n2-U
S-80842CNY-n2-U
S-80843CNY-n2-U
S-80844CNY-n2-U
S-80845CNY-n2-U
S-80846CNY-n2-U
S-80846KNY-n2-U*4
S-80847CNY-n2-U
S-80848CNY-n2-U
S-80849CNY-n2-U
S-80850CNY-n2-U
S-80851CNY-n2-U
7


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
Table 2 (2/2)
Detection Hysteresis width
voltage range
(Typ.)
SNT-4A
TO-92*1
5.2 V±2.0 %
0.260 V
S-80852CNPF-B9DTFU
S-80852CNY-n2-U
5.3 V±2.0 %
0.265 V
S-80853CNPF-B9ETFU
S-80853CNY-n2-U
5.4 V±2.0 %
0.270 V
S-80854CNPF-B9FTFU
S-80854CNY-n2-U
5.5 V±2.0 %
0.275 V
S-80855CNPF-B9GTFU
S-80855CNY-n2-U
5.6 V±2.0 %
0.280 V
S-80856CNPF-B9HTFU
S-80856CNY-n2-U
5.7 V±2.0 %
0.285 V
S-80857CNPF-B9ITFU
S-80857CNY-n2-U
5.8 V±2.0 %
0.290 V
S-80858CNPF-B9JTFU
S-80858CNY-n2-U
5.9 V±2.0 %
0.295 V
S-80859CNPF-B9KTFU
S-80859CNY-n2-U
6.0 V±2.0 %
0.300 V
S-80860CNPF-B9LTFU
S-80860CNY-n2-U
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 18 in “Electricala Characteristics for Customized Products” for electrical characteristics.
*4. Refer to the Table 20 in “Electricala Characteristics for Customized Products” for electrical characteristics.
8


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
3-2. CMOS Output Products
Table 3 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.45 V typ.
4.5 V±2.0 %
4.6 V±2.0 %
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
4.70 V max.*1
0.225 V
0.230 V
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
SC-82AB
S-80808CLNB-B7MT2x
S-80809CLNB-B7NT2x
S-80810CLNB-B7OT2x
S-80811CLNB-B7PT2x
S-80812CLNB-B7QT2x
S-80813CLNB-B7RT2x
S-80814CLNB-B7ST2x
S-80815CLNB-B6AT2x
S-80816CLNB-B6BT2x
S-80817CLNB-B6CT2x
S-80818CLNB-B6DT2x
S-80819CLNB-B6ET2x
S-80820CLNB-B6FT2x
S-80821CLNB-B6GT2x
S-80822CLNB-B6HT2x
S-80823CLNB-B6IT2x
S-80824CLNB-B6JT2x
S-80825CLNB-B6KT2x
S-80826CLNB-B6LT2x
S-80827CLNB-B6MT2x
S-80828CLNB-B6NT2x
S-80829CLNB-B6OT2x
S-80830CLNB-B6PT2x
S-80831CLNB-B6QT2x
S-80832CLNB-B6RT2x
S-80833CLNB-B6ST2x
S-80834CLNB-B6TT2x
S-80835CLNB-B6UT2x
S-80836CLNB-B6VT2x
S-80837CLNB-B6WT2x
S-80838CLNB-B6XT2x
S-80839CLNB-B6YT2x
S-80840CLNB-B6ZT2x
S-80841CLNB-B62T2x
S-80842CLNB-B63T2x
S-80843CLNB-B64T2x
S-80844CLNB-B65T2x
S-80845CLNB-B66T2x
S-80846CLNB-B67T2x
S-80847CLNB-B68T2x
S-80848CLNB-B69T2x
S-80849CLNB-B7AT2x
S-80850CLNB-B7BT2x
S-80851CLNB-B7CT2x
SOT-23-5
S-80815CLMC-B6AT2x
S-80816CLMC-B6BT2x
S-80817CLMC-B6CT2x
S-80818CLMC-B6DT2x
S-80819CLMC-B6ET2x
S-80820CLMC-B6FT2x
S-80821CLMC-B6GT2x
S-80822CLMC-B6HT2x
S-80823CLMC-B6IT2x
S-80824CLMC-B6JT2x
S-80825CLMC-B6KT2x
S-80826CLMC-B6LT2x
S-80827CLMC-B6MT2x
S-80828CLMC-B6NT2x
S-80829CLMC-B6OT2x
S-80830CLMC-B6PT2x
S-80831CLMC-B6QT2x
S-80832CLMC-B6RT2x
S-80833CLMC-B6ST2x
S-80834CLMC-B6TT2x
S-80835CLMC-B6UT2x
S-80836CLMC-B6VT2x
S-80837CLMC-B6WT2x
S-80838CLMC-B6XT2x
S-80839CLMC-B6YT2x
S-80840CLMC-B6ZT2x
S-80841CLMC-B62T2x
S-80842CLMC-B63T2x
S-80843CLMC-B64T2x
S-80844CLMC-B65T2x
S-80845CLMC-B66T2x
S-80846CLMC-B67T2x
S-80847CLMC-B68T2x
S-80848CLMC-B69T2x
S-80849CLMC-B7AT2x
S-80850CLMC-B7BT2x
S-80851CLMC-B7CT2x
SOT-89-3
S-80815CLUA-B6AT2x
S-80816CLUA-B6BT2x
S-80817CLUA-B6CT2x
S-80818CLUA-B6DT2x
S-80819CLUA-B6ET2x
S-80820CLUA-B6FT2x
S-80821CLUA-B6GT2x
S-80822CLUA-B6HT2x
S-80823CLUA-B6IT2x
S-80824CLUA-B6JT2x
S-80825CLUA-B6KT2x
S-80826CLUA-B6LT2x
S-80827CLUA-B6MT2x
S-80828CLUA-B6NT2x
S-80829CLUA-B6OT2x
S-80830CLUA-B6PT2x
S-80831CLUA-B6QT2x
S-80832CLUA-B6RT2x
S-80833CLUA-B6ST2x
S-80834CLUA-B6TT2x
S-80835CLUA-B6UT2x
S-80836CLUA-B6VT2x
S-80837CLUA-B6WT2x
S-80838CLUA-B6XT2x
S-80839CLUA-B6YT2x
S-80840CLUA-B6ZT2x
S-80841CLUA-B62T2x
S-80842CLUA-B63T2x
S-80843CLUA-B64T2x
S-80844CLUA-B65T2x
S-80844KLUA-D2AT2x*2
S-80845CLUA-B66T2x
S-80846CLUA-B67T2x
S-80847CLUA-B68T2x
S-80848CLUA-B69T2x
S-80849CLUA-B7AT2x
S-80850CLUA-B7BT2x
S-80851CLUA-B7CT2x
9


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
Table 3 (2/2)
Detection Hysteresis width
voltage range
(Typ.)
SC-82AB
SOT-23-5
SOT-89-3
5.2 V±2.0 %
0.260 V
S-80852CLNB-B7DT2x S-80852CLMC-B7DT2x S-80852CLUA-B7DT2x
5.3 V±2.0 %
0.265 V
S-80853CLNB-B7ET2x S-80853CLMC-B7ET2x S-80853CLUA-B7ET2x
5.4 V±2.0 %
0.270 V
S-80854CLNB-B7FT2x S-80854CLMC-B7FT2x S-80854CLUA-B7FT2x
5.5 V±2.0 %
0.275 V
S-80855CLNB-B7GT2x S-80855CLMC-B7GT2x S-80855CLUA-B7GT2x
5.6 V±2.0 %
0.280 V
S-80856CLNB-B7HT2x S-80856CLMC-B7HT2x S-80856CLUA-B7HT2x
5.7 V±2.0 %
0.285 V
S-80857CLNB-B7IT2x
S-80857CLMC-B7IT2x
S-80857CLUA-B7IT2x
5.8 V±2.0 %
0.290 V
S-80858CLNB-B7JT2x
S-80858CLMC-B7JT2x
S-80858CLUA-B7JT2x
5.9 V±2.0 %
0.295 V
S-80859CLNB-B7KT2x S-80859CLMC-B7KT2x S-80859CLUA-B7KT2x
6.0 V±2.0 %
0.300 V
S-80860CLNB-B7LT2x
S-80860CLMC-B7LT2x
S-80860CLUA-B7LT2x
*1. Describes the release voltage.
*2. Refer to the Table 19 in “Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 4 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
SNT-4A
S-80808CLPF-B7MTFU
S-80809CLPF-B7NTFU
S-80810CLPF-B7OTFU
S-80811CLPF-B7PTFU
S-80812CLPF-B7QTFU
S-80813CLPF-B7RTFU
S-80814CLPF-B7STFU
S-80815CLPF-B6ATFU
S-80816CLPF-B6BTFU
S-80817CLPF-B6CTFU
S-80818CLPF-B6DTFU
S-80819CLPF-B6ETFU
S-80820CLPF-B6FTFU
S-80821CLPF-B6GTFU
S-80822CLPF-B6HTFU
S-80823CLPF-B6ITFU
S-80824CLPF-B6JTFU
S-80825CLPF-B6KTFU
S-80826CLPF-B6LTFU
S-80827CLPF-B6MTFU
S-80828CLPF-B6NTFU
S-80829CLPF-B6OTFU
S-80830CLPF-B6PTFU
S-80831CLPF-B6QTFU
S-80832CLPF-B6RTFU
S-80833CLPF-B6STFU
S-80834CLPF-B6TTFU
S-80835CLPF-B6UTFU
S-80836CLPF-B6VTFU
S-80837CLPF-B6WTFU
S-80838CLPF-B6XTFU
TO-92*1
S-80815CLY-n2-U
S-80816CLY-n2-U
S-80817CLY-n2-U
S-80818CLY-n2-U
S-80819CLY-n2-U
S-80820CLY-n2-U
S-80821CLY-n2-U
S-80822CLY-n2-U
S-80823CLY-n2-U
S-80824CLY-n2-U
S-80825CLY-n2-U
S-80826CLY-n2-U
S-80827CLY-n2-U
S-80828CLY-n2-U
S-80829CLY-n2-U
S-80830CLY-n2-U
S-80831CLY-n2-U
S-80832CLY-n2-U
S-80833CLY-n2-U
S-80834CLY-n2-U
S-80835CLY-n2-U
S-80836CLY-n2-U
S-80837CLY-n2-U
S-80838CLY-n2-U
10


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 4 (2/2)
Detection Hysteresis width
voltage range
(Typ.)
SNT-4A
TO-92*1
3.9 V±2.0 %
0.195 V
S-80839CLPF-B6YTFU
S-80839CLY-n2-U
4.0 V±2.0 %
0.200 V
S-80840CLPF-B6ZTFU
S-80840CLY-n2-U
4.1 V±2.0 %
0.205 V
S-80841CLPF-B62TFU
S-80841CLY-n2-U
4.2 V±2.0 %
0.210 V
S-80842CLPF-B63TFU
S-80842CLY-n2-U
4.3 V±2.0 %
0.215 V
S-80843CLPF-B64TFU
S-80843CLY-n2-U
4.4 V±2.0 %
0.220 V
S-80844CLPF-B65TFU
S-80844CLY-n2-U
4.45 V typ.
4.70 V max.*2
S-80844KLY-n2-U*3
4.5 V±2.0 %
0.225 V
S-80845CLPF-B66TFU
S-80845CLY-n2-U
4.6 V±2.0 %
0.230 V
S-80846CLPF-B67TFU
S-80846CLY-n2-U
4.7 V±2.0 %
0.235 V
S-80847CLPF-B68TFU
S-80847CLY-n2-U
4.8 V±2.0 %
0.240 V
S-80848CLPF-B69TFU
S-80848CLY-n2-U
4.9 V±2.0 %
0.245 V
S-80849CLPF-B7ATFU
S-80849CLY-n2-U
5.0 V±2.0 %
0.250 V
S-80850CLPF-B7BTFU
S-80850CLY-n2-U
5.1 V±2.0 %
0.255 V
S-80851CLPF-B7CTFU
S-80851CLY-n2-U
5.2 V±2.0 %
0.260 V
S-80852CLPF-B7DTFU
S-80852CLY-n2-U
5.3 V±2.0 %
0.265 V
S-80853CLPF-B7ETFU
S-80853CLY-n2-U
5.4 V±2.0 %
0.270 V
S-80854CLPF-B7FTFU
S-80854CLY-n2-U
5.5 V±2.0 %
0.275 V
S-80855CLPF-B7GTFU
S-80855CLY-n2-U
5.6 V±2.0 %
0.280 V
S-80856CLPF-B7HTFU
S-80856CLY-n2-U
5.7 V±2.0 %
0.285 V
S-80857CLPF-B7ITFU
S-80857CLY-n2-U
5.8 V±2.0 %
0.290 V
S-80858CLPF-B7JTFU
S-80858CLY-n2-U
5.9 V±2.0 %
0.295 V
S-80859CLPF-B7KTFU
S-80859CLY-n2-U
6.0 V±2.0 %
0.300 V
S-80860CLPF-B7LTFU
S-80860CLY-n2-U
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 19 in “Electricala Characteristics for Customized Products” for electrical characteristics.
11


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
Output Forms
1. Output Forms in S-808xxC Series
Table 5
S-808xxC Series
Nch open-drain output products
(Active Low)
“N” is the last letter of the product name.
e.g. S-80815CN
CMOS output products
(Active Low)
“L” is the last letter of the product name.
e.g. S-80815CL
2. Output Forms and Their Usage
Table 6
Usage
Nch open-drain output products CMOS output products
(Active Low)
(Active Low)
Different power supplies
Yes No
Active Low reset for CPUs
Yes Yes
Active High reset for CPUs
No No
Detection voltage change by resistor divider
Yes
No
Example for two power supplies
VDD1
VDD2
Example for one power supply
VDD
VDD
V/D
Nch
CPU
OUT
VSS
V/D
CMOS OUT
CPU
VSS
Figure 3
V/D
Nch
CPU
OUT
VSS
12


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Pin Configurations
SC-82AB
Top view
43
12
Figure 4
SOT-23-5
Top view
54
12 3
Figure 5
SOT-89-3
Top view
Table 7
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
NC*1
No connection
4
VSS
GND pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Table 8
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
GND pin
4
NC*1
No connection
5
NC*1
No connection
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Pin No.
1
2
3
Table 9
Symbol
OUT
VDD
VSS
Description
Voltage detection output pin
Voltage input pin
GND pin
123
Figure 6
SNT-4A
Top view
14
23
Figure 7
Table10
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VSS
GND pin
3
NC*1
No connection
4
VDD
Voltage input pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
13


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
TO-92
Bottom view
123
Pin No.
1
2
3
Table 11
Symbol
OUT
VDD
VSS
Description
Voltage detection output pin
Voltage input pin
GND pin
Figure 8
14


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products
Table 12
Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82AB
dissipation
SNT-4A
Symbol
VDDVSS
VOUT
IOUT
PD
Operating ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
(Ta = 25 °C unless otherwise specified)
Absolute maximum ratings
Unit
7V
VSS0.3 to VSS+7
V
VSS0.3 to VDD+0.3
V
50 mA
150 (When not mounted on board) mW
350*1
mW
140 (When not mounted on board) mW
300*1
mW
40 to +85
°C
40 to +125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
500
400
300 SC-82AB
200
SNT-4A
100
0
0 50 100 150
Ambient Temperature Ta (°C)
Figure 9 Power Dissipation of Package (When Mounted on Board)
15


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.2_01
2. Detection Voltage Typ. 1.5 V or More Products
Table 13
Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82AB
dissipation
SOT-23-5
Symbol
VDDVSS
VOUT
IOUT
PD
SOT-89-3
SNT-4A
TO-92
Operating ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
(Ta = 25 °C unless otherwise specified)
Absolute maximum ratings
Unit
12 V
VSS0.3 to VSS+12
V
VSS0.3 to VDD+0.3
V
50 mA
150 (When not mounted on board) mW
350*1
mW
250 (When not mounted on board) mW
600*1
mW
500 (When not mounted on board) mW
1000*1
mW
140 (When not mounted on board) mW
300*1
mW
400 (When not mounted on board) mW
800*1
mW
40 to +85
°C
40 to +125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
1200
1000
800
600
SOT-89-3
TO-92
SOT-23-5
SC-82AB
400
200
SNT-4A
0
0 50
100 150
Ambient Temperature Ta (°C)
Figure 10 Power Dissipation of Package (When Mounted on Board)
16


S-80820C (Seiko)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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Rev.6.2_01
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
Release voltage
VDET
+VDET
S-80808
S-80809
VDET(S)
×0.98
0.802
0.910
VDET(S)
0.834
0.944
VDET(S)
×1.02
0.867
0.979
V
V
V
1
1
1
S-80810
1.017 1.054 1.091
V
1
S-80811
1.125 1.164 1.203
V
1
S-80812
1.232 1.273 1.315
V
1
S-80813
1.340 1.383 1.427
V
1
S-80814
1.448 1.493 1.538
V
1
Hysteresis width
VHYS
S-80808
S-80809
0.018 0.034 0.051
0.028 0.044 0.061
V
V
1
1
S-80810
0.037 0.054 0.071
V
1
S-80811
0.047 0.064 0.081
V
1
S-80812
0.056 0.073 0.091
V
1
S-80813
0.066 0.083 0.101
V
1
S-80814
0.076 0.093 0.110
V
1
Current consumption
ISS
VDD = 1.5 V S-80808 to 09
1.3
3.5
μA 2
VDD = 2.0 V S-80810 to 14
1.3
3.5
μA
2
Operating voltage
VDD
0.65 5.0 V 1
Output current
IOUT
Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V
0.04
0.2
mA 3
Leakage current
ILEAK
Output transistor,
Nch, VDS = 5.0 V, VDD = 5.0 V
60
nA 3
Response time
tPLH
⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2
Δ − VDET
ΔTa • −VDET
Ta = −40 to +85 °C
±100
±350
ppm/
°C
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
17


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S-808xxC Series
Rev.6.2_01
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
VDET
VDET(S) VDET(S) VDET(S)
×0.98
×1.02
V
1
Hysteresis width
Current consumption
Operating voltage
Output current
VHYS
ISS
VDD
IOUT
VDD = 3.5 V
VDD = 4.5 V
VDD = 6.0 V
VDD = 7.5 V
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
VDD = 2.4 V
S-80827 to 60
VDET
×0.03
0.95
0.59
2.88
VDET
×0.05
0.8
0.8
0.9
0.9
1.36
4.98
VDET
×0.08
2.4
2.4
2.7
2.7
10.0
V
μA
μA
μA
μA
V
mA
mA
1
2
2
2
2
1
3
3
Leakage current
ILEAK
Output transistor,
Nch, VDS = 10.0 V, VDD = 10.0 V
100 nA 3
Response time
tPLH
⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2
Δ − VDET
ΔTa • −VDET
Ta = −40 to +85 °C
±100
±350
ppm/
°C
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
18


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S-808xxC Series
2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
Release voltage
VDET
+VDET
S-80808
S-80809
VDET(S)
×0.98
0.802
0.910
VDET(S)
0.834
0.944
VDET(S)
×1.02
0.867
0.979
V
V
V
1
1
1
S-80810
1.017 1.054 1.091
V
1
S-80811
1.125 1.164 1.203
V
1
S-80812
1.232 1.273 1.315
V
1
S-80813
1.340 1.383 1.427
V
1
S-80814
1.448 1.493 1.538
V
1
Hysteresis width
VHYS
S-80808
S-80809
0.018 0.034 0.051
0.028 0.044 0.061
V
V
1
1
S-80810
0.037 0.054 0.071
V
1
S-80811
0.047 0.064 0.081
V
1
S-80812
0.056 0.073 0.091
V
1
S-80813
0.066 0.083 0.101
V
1
S-80814
0.076 0.093 0.110
V
1
Current consumption
Operating voltage
Output current
Response time
Detection voltage
temperature
coefficient*2
ISS VDD = 1.5 V S-80808 to 09
VDD = 2.0 V S-80810 to 14
VDD
IOUT Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V
Output transistor,
Pch, VDS = 2.1 V, VDD = 4.5 V
tPLH
Δ − VDET
ΔTa • −VDET
Ta = −40 to +85 °C
0.65
0.04
2.9
1.3
1.3
0.2
5.8
±100
3.5
3.5
5.0
60
±350
μA
μA
V
mA
mA
μs
ppm/
°C
2
2
1
3
4
1
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
19


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S-808xxC Series
Rev.6.2_01
2-2. Detection Voltage Typ.1.5 V or More Products
Table 17
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
VDET
VDET(S) VDET(S) VDET(S)
×0.98
×1.02
V
1
Hysteresis width
Current consumption
Operating voltage
Output current
VHYS
ISS
VDD
IOUT
VDD = 3.5 V
VDD = 4.5 V
VDD = 6.0 V
VDD = 7.5 V
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
VDD = 2.4 V
S-80827 to 60
VDET
×0.03
0.95
0.59
2.88
VDET
×0.05
0.8
0.8
0.9
0.9
1.36
4.98
VDET
×0.08
2.4
2.4
2.7
2.7
10.0
V
μA
μA
μA
μA
V
mA
mA
1
2
2
2
2
1
3
3
Output transistor, VDD = 4.8 V
Pch, VDS = 0.5 V S-80815 to 39
VDD = 6.0 V
S-80840 to 56
1.43
1.68
2.39
2.78
mA 4
mA 4
VDD = 8.4 V
S-80857 to 60
2.08
3.42
mA 4
Response time
Detection voltage
temperature
coefficient*2
tPLH
Δ − VDET
ΔTa • −VDET
Ta = −40 to +85 °C
⎯ ⎯ 60 μs 1
±100
±350
ppm/
°C
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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S-808xxC Series
Test Circuits
1.
VDD
V
VDD
S-808xxC OUT
Series
VSS
V
R*1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 11
2.
A
VDD
VDD S-808xxC OUT
Series
VSS
3.
VDD
Figure 12
VDD
S-808xxC OUT
V Series
A
VSS
V
VDS
4.
VDD
Figure 13
VDD
V
VDS
S-808xxC OUT
V Series
A
VSS
Figure 14
21


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Rev.6.2_01
Timing Chart
1. Nch Open-drain Output Products
Hysteresis width (VHYS)
VDD
VDD
Release voltage (+VDET)
Detection voltage (VDET)
Minimum operating voltage
VSS
Output from the OUT pin
VDD
OUT
VSS
R
100 kΩ
V
VSS
Figure 15
2. CMOS Output Products
Hysteresis width (VHYS)
VDD
VDD
Release voltage (+VDET)
Detection voltage (VDET)
Minimum operating voltage
VSS
Output from the OUT pin
VDD
OUT
VSS
V
VSS
Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the
shaded region.
Figure 16
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S-808xxC Series
Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in
Figure 17 is OFF, the comparator input voltage is (RB + RC) VDD .
RA + RB + RC
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage VDET. When the VDD falls below VDET (point A in Figure 18), the Nch transistor
becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time
the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed to
RB VDD .
RA + RB
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the
VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses VDET, as long as it does not exceed the release voltage +VDET.
1-5. When the VDD rises above +VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pch
transistor becomes ON to provide VDD level at the output.
VDD
*1 RA
+
VSS
VREF
RB
RC
N1
*1. Parasiteic diode
Figure 17 Operation 1
Pch
Nch
*1
OUT
*1
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S-808xxC Series
Rev.6.2_01
Hysteresis width (VHYS)
(1) (2) (3) (4)
B
A
(5)
VDD
Release voltage (+VDET)
Detection voltage (VDET)
Minimum operating voltage
VSS
VDD
VSS
Output from the OUT pin
Figure 18 Operation 2
2. Other Characteristics
2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 19 shows the temperature characteristics of the detection voltage.
VDET [V]
+0.945 mV/°C
VDET25*1
0.945 mV/°C
40 25
85 Ta [°C]
*1. VDET25 is an actual detection voltage value at 25°C.
Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C)
2-2. Temperature Characteristics of Release Voltage
The temperature change Δ + VDET of the release voltage is calculated by using the temperature
ΔTa
chnange Δ − VDET of the detection voltage as follows:
ΔTa
Δ
+ VDET
ΔTa
=
+ VDET
VDET
×
Δ
VDET
ΔTa
The temperature change of the release voltage and the detection voltage have the same sign
consequently.
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2-3. Temperature Characteristics of Hysteresis Voltage
The temperature change of the hysteresis voltage is expressed as
Δ
+ VDET
ΔTa
Δ
VDET
ΔTa
and is calculated
as follows:
Δ
+ VDET
ΔTa
Δ
VDET
ΔTa
=
VHYS
VDET
×
Δ
VDET
ΔTa
Standard Circuit
VDD
OUT
VSS
R*1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 20
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
Technical Terms
1. Detection Voltage (VDET), Release Voltage (+VDET)
The detection voltage (VDET) is a voltage at which the output turns to low. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(VDET) Min. and the maximum (VDET) Max. is called the detection voltage range (Refer to Figure 21).
Example: For the S-80815CN, the detection voltage lies in the range of 1.470(VDET)1.530.
This means that some S-80815CNs have 1.470 V for VDET and some have 1.530 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified
minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure
22). The range is calculed from the actual detection voltage (VDET) of a product and is expressed by
VDET×1.03≤+VDET≤−VDET ×1.08.
Example: For the S-80815CN, the release voltage lies in the range of 1.514(+VDET)1.652.
This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V.
25


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S-808xxC Series
Rev.6.2_01
VDD
(VDET) Max.
(VDET) Min.
Detection voltage
Detection voltage range
Release voltage
(+VDET) Max.
(+VDET) Min.
VDD
Release voltage range
OUT OUT
Figure 21 Detection Voltage (CMOS Output Products) Figure 22 Release Voltage (CMOS Output Products)
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
+VDET is always larger than VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B The voltage at point A =VHYS in Figure 18). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release
of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high
(release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When
the input voltage drops below the detection voltage (VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes
from low to high. A through-type current is again generated, a voltage drop appears, and repeating the
process finally induces oscillation.
VDD
RA
VIN
S-808xxCL
OUT
RB
VSS
Figure 23 An Example for Bad Implementation of Input Voltage Divider
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S-808xxC Series
Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2x, S-80824KNY-n2-U
Table 18
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ. Max.
Unit
Test
circuit
Detection voltage*1
Release voltage
Current consumption
Operating voltage
VDET
+VDET
ISS
VDD
VDD=6.0 V
2.295
4.300
0.95
2.400*2
4.400
0.8
2.505
4.500
2.4
10.0
V
V
μA
V
1
1
2
1
Output current
Leakage current
Response time
Detection voltage
temperature
coefficient*3
IOUT
ILEAK
tPLH
Output transistor, VDD = 0.95 V
Nch, VDS = 0.5 V VDD = 1.2 V
Output transistor,
Nch, VDD = 10.0 V, VDS = 10.0 V
Δ − VDET
ΔTa • −VDET
Ta = −40 to 85 °C
0.03
0.23
0.24
0.50
±100
mA
mA
0.1 μA
60 μs
±350 ppm/°C
3
3
3
1
1
*1. VDET: Actual detection voltage value
*2. Specified detection voltage value (VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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Rev.6.2_01
2. S-80844KLUA-D2AT2x, S-80844KLY-n2-U
Table 19
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
Release voltage
Current consumption
Operating voltage
VDET
+VDET
ISS
VDD
VDD = 6.0 V
4.295
0.95
4.450*2
1.0
4.605
4.700
3.0
10.0
V
V
μA
V
1
1
2
1
Output current
Response time
Detection voltage
temperature
coefficient*3
IOUT Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V VDD = 2.4 V
Output transistor,
Pch, VDS = 0.5 V
VDD = 4.8 V
tPLH
Δ − VDET
ΔTa • −VDET
Ta = −40 to 85 °C
0.23
1.60
0.36
0.50
3.70
0.62
±100
mA 3
mA 3
mA 4
60 μs 1
±350 ppm/°C 1
*1. VDET: Actual detection voltage value
*2. Specified detection voltage value (VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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S-808xxC Series
3. S-80846KNUA-D2CT2x, S-80846KNY-n2-U
Table 20
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Detection voltage*1
Hysteresis width
Current consumption
Operating voltage
Output current
Leakage current
Response time
Detection voltage
temperature
coefficient*3
VDET
VHYS
ISS VDD = 6.0 V
VDD
IOUT Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V VDD = 2.4 V
ILEAK
Output transistor,
Nch, VDD = 10.0 V, VDS = 10.0 V
tPLH
Δ − VDET
ΔTa • −VDET
Ta = −40 to 85 °C
4.500
0.95
0.59
2.88
Typ. Max.
4.600*2
0.05
0.9
1.36
4.98
4.700
0.10
2.7
10.0
0.1
60
Unit
Test
circuit
V1
V1
μA 2
V1
mA 3
mA 3
μA 3
μs 1
±100 ±350 ppm/°C 1
*1. VDET: Actual detection voltage value
*2. Specified detection voltage value (VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ]( )Δ − VDET
ΔTa
mV/°C *1 = −VDET(S) Typ.
V
*2
×
Δ − VDET
ΔTa VDET
ppm/°C *3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Precautions
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
power supply voltage (VDD) is slow near the detection voltage.
When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII Semiconductor Corporation shall not
bear any responsibility for the products on the circuits described herein.
SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection
with any infringement of the products including this IC upon patents owned by a third party.
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Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80808CL
0.90
0.85
+VDET
0.80
-VDET
0.75
-40 -20 0 20 40 60 80
Ta (°C)
S-80814CL
1.55
1.50
+VDET
1.45
1.40
1.35
-VDET
1.30
1.25
-40 -20 0 20 40 60 80
Ta (°C)
S-80815CL
1.60
S-80860CL
6.40
1.55
+VDET
6.30
6.20
+VDET
6.10
1.50
-VDET
6.00
5.90
-VDET
1.45
-40 -20 0 20 40 60 80
Ta (°C)
5.80
-40 -20 0 20 40 60 80
Ta (°C)
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80808CL
8.0
S-80814CL
8.0
7.0 7.0
6.0
5.0
4.0
3.0
-40 -20 0 20 40 60 80
Ta (°C)
S-80815CL
8.0
6.0
5.0
4.0
3.0
-40 -20 0 20 40 60 80
Ta (°C)
S-80860CL
8.0
7.0 7.0
6.0 6.0
5.0 5.0
4.0
3.0
-40 -20 0 20 40 60 80
Ta (°C)
4.0
3.0
-40 -20 0 20 40 60 80
Ta (°C)
30




S-80820C.pdf
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