M0225YH420 (IXYS)
Soft Recovery Diode

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An IXYS Company
Date:- 8 Jun, 2004
Data Sheet Issue:- 1
Soft Recovery Diode
Types M0225YH300 to M0225YH450
Old Type No.: SM30-45HXC084
Absolute Maximum Ratings
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3000-4500
3100-4600
UNITS
V
V
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
I2t
Tj op
Tstg
OTHER RATINGS
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Maximum average forward. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
MAXIMUM
LIMITS
225
147
89
421
365
2000
2200
20.0×103
24.2×103
-40 to +150
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
°C
°C
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 1 of 11
June, 2004


M0225YH420 (IXYS)
Soft Recovery Diode

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Characteristics
Soft Recovery Diode Types M0225YH300 to M0225YH450
PARAMETER
VFM Maximum peak forward voltage
VT0 Threshold voltage
rT Slope resistance
VFRM Maximum forward recovery voltage
IRRM Peak reverse current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
R
thJK
Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
3.3
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 4.54 IFM=635A
- 3.80 IFM=450A
- 1.90
V
V
- 4.16
m
- 200 di/dt = 1000A/µs, 25°C
- 400 di/dt = 1000A/µs
V
- 50 Rated VRRM
mA
220 -
µC
100 130 IFM=550A, tp=500µs, di/dt=40A/µs, Vr=50V, µC
70 - 50% Chord.
A
3-
µs
- 0.1 Double side cooled
- 0.2 Single side cooled
K/W
- 5.5
kN
140 -
g
Notes:-
1) Unless otherwise indicated Tj=150°C.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 2 of 11
June, 2004


M0225YH420 (IXYS)
Soft Recovery Diode

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Soft Recovery Diode Types M0225YH300 to M0225YH450
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
30
32
34
36
38
40
42
44
45
VRRM
(V)
3000
3200
3400
3600
3800
4000
4200
4400
4500
VRSM
(V)
3100
3300
3500
3700
3900
4100
4300
4500
4600
VR dc
(V)
1700
1800
1850
1900
1950
2000
2050
2100
2150
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the
coefficients of the expression for the forward characteristic given below:
VF = A + B ln(I F ) + C I F + D I F
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
150 µs
I.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
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June, 2004


M0225YH420 (IXYS)
Soft Recovery Diode

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Soft Recovery Diode Types M0225YH300 to M0225YH450
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery
loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then
be evaluated from:
[ ]TSINK = TJ (MAX ) E k + f RthJK
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
RthJK = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot ) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring
oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current
signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of
this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of
snubber capacitor or excessively small values of snubber resistor. Such excessive component values
may lead to device damage due to the large resultant values of snubber discharge current. If required,
please consult the factory for assistance.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 4 of 11
June, 2004


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Soft Recovery Diode

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Soft Recovery Diode Types M0225YH300 to M0225YH450
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I AV = − VT 0 +
VT 0 + 4 ff 2 rT WAV
2 ff 2 rT
Where VT0 =1.9V, rT = 4.16m
ff = form factor (normally unity for fast diode applications)
WAV
=
T
Rth
T = Tj(MAX ) TK
7.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for VF
in terms of IF given below:
VF = A + B ln(IF ) + C I F + D IF
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for VF agree with the true device characteristic over a current
range, which is limited to that plotted.
25°C Coefficients
A -0.98548669
B 0.7956059
C 3.12049×10-3
D -0.02422947
150°C Coefficients
0.604350122
0.01967453
1.245792×10-3
0.1197498
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum
ratings shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included
as parallel to the first.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 5 of 11
June, 2004


M0225YH420 (IXYS)
Soft Recovery Diode

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Curves
Figure 1 – Forward characteristics of Limit device
10000
M0225YH300-450
Issue 1
Soft Recovery Diode Types M0225YH300 to M0225YH450
Figure 2 – Maximum forward recovery voltage
10000
M0225YH300-450
Issue 1
1000
150°C
25°C
1000
100
150°C
25°C
100
0
2 4 6 8 10 12
Maximum instantaneous forward voltage - VFM (V)
Figure 3 - Recovered charge, Qrr
1000
M0225YH300-450
Issue 1
Tj = 150°C
1500A
1000A
550A
300A
10
10
100
1000
10000
Rate of rise of forward current - di/dt (A/µs)
Figure 4 - Recovered charge, Qra (50% chord)
1000
M0225YH300-450
Issue 1
Tj = 150°C
2000A
1000A
500A
250A
100 100
10
1
10 100
Commutation rate - di/dt (A/µs)
1000
10
1
10 100
Commutation rate - di/dt (A/µs)
1000
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
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June, 2004


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Soft Recovery Diode

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Figure 5 - Maximum reverse current, Irm
1000
M0225YH300-450
Issue 1
Tj = 150°C
1500A
1000A
550A
300A
100
Soft Recovery Diode Types M0225YH300 to M0225YH450
Figure 6 - Maximum recovery time, trr (50% chord)
10
M0225YH300-450
Issue 1
Tj = 150°C
1500A
1000A
550A
300A
10
1
1 10 100 1000
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulse
10
M0225YH300-450
Issue 1
Tj = 150°C
Vr=67%VRRM
0.5µF, 2.2
Snubber
1000A
800A
600A
1
300A
1
1 10 100
Commutation rate - di/dt (A/µs)
Figure 8 - Sine wave energy per pulse
1.00E+03
M0225YH300-450
Issue 1
Tj = 150°C
1.00E+02
1.00E+01
2000A
1000A
500A
250A
100A
1000
1.00E+00
0.1
1.00E-01
0.01
1
10 100 1000
Commmutation rate - di/dt (A/µs)
10000
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
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June, 2004


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Soft Recovery Diode

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Figure 9 - Sine wave frequency vs. pulse width
1.00E+05
100A
M0225YH300-450
Issue 1
TK = 55°C
1.00E+04
250A
100% Duty Cycle
500A
1.00E+03
1000A
1.00E+02 2000A
Soft Recovery Diode Types M0225YH300 to M0225YH450
Figure 10 - Sine wave frequency vs. pulse width
1.00E+05
100A
M0225YH300-450
Issue 1
TK = 85°C
100% Duty Cycle
1.00E+04
250A
500A
1.00E+03
1000A
1.00E+02
2000A
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 11 - Square wave energy per pulse
1.00E+03
M0225YH300-450
Issue 1
di/dt =100A/µs
Tj = 150°C
1.00E+02
1.00E+01
2000A
1.00E+00 1000A
500A
1.00E-01 250A
100A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 12 - Square wave energy per pulse
1.00E+03
M0225YH300-450
Issue 1
di/dt =500A/µs
Tj = 150°C
1.00E+02
2000A
1000A
500A
250A
100A
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 8 of 11
June, 2004


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Soft Recovery Diode

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Soft Recovery Diode Types M0225YH300 to M0225YH450
Figure 13 - Square wave frequency vs. pulse width
1.00E+05
M0225YH300-450
Issue 1
di/dt =100A/µs
TK=55°C
100A
1.00E+04
100% Duty Cycle
250A
1.00E+03
500A
1000A
Figure 14 - Square wave frequency vs. pulse width
1.00E+05
M0225YH300-450
Issue 1
di/dt =500A/µs
TK = 55°C
100A
1.00E+04
100% Duty Cycle
250A
1.00E+03
500A
1.00E+02
2000A
1.00E+02
1000A
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 15 - Square wave frequency vs. pulse width
1.00E+05
100A
M0225YH300-450
Issue 1
di/dt =100A/µs
TK = 85°C
1.00E+04
250A
100% Duty Cycle
500A
1.00E+03
1000A
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 16 - Square wave frequency vs. pulse width
1.00E+05
M0225YH300-450
Issue 1
di/dt =500A/µs
TK = 85°C
100A
1.00E+04
250A
100% Duty Cycle
1.00E+03
500A
1.00E+02
1.00E+02
1000A
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 9 of 11
June, 2004


M0225YH420 (IXYS)
Soft Recovery Diode

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Figure 17 – Maximum surge and I2t ratings
10000
Soft Recovery Diode Types M0225YH300 to M0225YH450
1.00E+06
1000
I2t: VRRM10V
I2t: VR=60% VRRM
IFSM: VRRM10V
1.00E+05
IFSM: VR=60% VRRM
100 1
3 5 10 1
Duration of surge (ms)
5 10
Tj (initial) = 150°C
M0225YH300-450
Issue 1
50 100
Duration of surge (cycles @ 50Hz)
1.00E+04
Figure 18 – Transient thermal impedance
1
M0225YH300-450
Issue 1
0.1
SSC 0.2°C/W
DSC 0.1°C/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
Time (s)
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 10 of 11
1
10 100
June, 2004


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Soft Recovery Diode

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Outline Drawing & Ordering Information
Soft Recovery Diode Types M0225YH300 to M0225YH450
100A317
ORDERING INFORMATION
(Please quote 10 digit code as below)
M0225
YH
Fixed
Type Code
Fixed
outline code
Voltage code
VRRM÷100
30-45
Typical order code: M0225YH320 – 3200V VRRM, 26.6mm clamp height capsule.
0
Fixed code
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
WESTCODE
An IXYS Company
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
www.westcode.com
www.ixys.com
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
© Westcode Semiconductors Ltd.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1
Page 11 of 11
June, 2004




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