R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R0878LC18x to R0878LC21x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1600-2100
1600-2100
1600-1800
1700-1900
UNITS
V
V
V
V
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
878
583
338
1765
1456
7500
8250
281×103
340×103
1000
1500
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 1 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Characteristics
Distributed Gate Thyristor types R0878LC18x to R0878LC21x
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
60
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.12 ITM=1400A
- 2.70 ITM=2650A
- 1.447
- 0.480
- - VD=80% VDRM, Linear ramp, Gate o/c
- 70 Rated VDRM
- 70 Rated VRRM
- 3.0
Tj=25°C
- 300
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.8 2.0 VD=67% VDRM, IT=1500A, di/dt=60A/µs,
1.5 3.5 IFG=2A, tr=0.5µs, Tj=25°C
720 -
350 400 ITM=1000A, tp=1000µs, di/dt=60A/µs,
160 - Vr=50V
4.4 -
-
65
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
70
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.032 Double side cooled
- 0.064 Single side cooled
- 20
340 -
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 2 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
18
20
21
VDRM VDSM
V
1800
2000
2100
VRRM
V
1800
1800
1800
VRSM
V
1900
1900
1900
VD
DC V
1150
1250
1400
VR
DC V
1150
1150
1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 3 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 4 of 12
150 µs
Qrr = irr .dt
0
K Factor = t1
t2
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
( )TSINK (new) = TSINK (original ) E k + f Rth(J Hs )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W(TOT) = W(original) + E f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Vr = Commutating source voltage
Where: CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 5 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT )+ C IT + D IT
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
125°C Coefficients
A 1.510816
B -0.01749119
C 4.616469×10-4
D 2.404072×10-3
16.2 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
⎜⎜⎛1
e
t
τp
⎟⎞
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
Term
rp
τp
1
0.01771901
0.7085781
D.C. Double Side Cooled
2
4.240625×10-3
3
6.963806×10-3
0.1435833
0.03615196
4
3.043661×10-3
2.130842×10-3
Term
rp
τp
1
0.03947164
4.090062
D.C. Single Side Cooled
2
0.01022837
3
8.789912×10-3
1.078983
0.08530917
4
4.235162×10-3
0.01128791
5
1.907609×10-3
1.240861×10-3
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 6 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Curves
Figure 1 - On-state characteristics of Limit device
10000
R0878LC18x-21x
Issue 3
Figure 2 - Transient thermal impedance
0.1
R0878LC18x-21x
Issue 3
SSC 0.064K/W
Tj = 125°C
0.01
DSC 0.032K/W
1000
0.001
0.0001
100
0
1234
Instantaneous on-state voltage - VT (V)
5
Figure 3 - Gate characteristics - Trigger limits
6
R0878LC18x-21x
Issue 3
Tj=25°C
5
0.00001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
`
Figure 4 - Gate characteristics - Power curves
20
R0878LC18x-21x
Issue 3
18 Tj=25°C
16
4 Max VG dc
IGT, VGT
3
14
Max VG dc
12
10
8
2 PG Max 30W dc
6
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Trigger Current - IGT (A)
1
4
PG 2W dc
2
Min VG dc
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 7 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Figure 5 - Total recovered charge, Qrr
10000
R0878LC18x-21x
Issue 3
Tj = 125°C
1000
2000A
1500A
1000A
500A
Figure 6 - Recovered charge, Qra (50% chord)
1000
R0878LC18x-21x
Issue 3
Tj = 125°C
2000A
1500A
1000A
500A
100
10
100
Commutation rate - di/dt (A/µs)
1000
100
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
1000
R0878LC18x-21x
Issue 3
Tj = 125°C
2000A
1500A
1000A
500A
Figure 8 - Maximum recovery time, trr (50% chord)
10
R0878LC18x-21x
Issue 3
Tj = 125°C
100
2000A
1500A
1000A
500A
10
10
100
Commutation rate - di/dt (A/µs)
1000
1
10 100 1000
Commutation rate - di/dt (A/µs)
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 8 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Figure 9 – Reverse recovery energy per pulse
1
R0878LC18x-21x
Issue 3
Snubber
0.22µF, 10
Tj = 125°C
Vrm = 67% VRRM
2000A
1500A
1000A
500A
Figure 10 - Sine wave energy per pulse
1.00E+02
R0878LC18x-21x
Issue 3
Tj=125°C
1.00E+01
4kA
1.00E+00 2kA
1.5kA
1kA
1.00E-01
500A
0.1
10
100
Commutation rate - di/dt (A/µs)
1000
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 11 - Sine wave frequency ratings
1.00E+05
500A
R0878LC18x-21x
Issue 3
THs=55°C
100% Duty Cycle
1.00E+04 1kA
1.5kA
2kA
Figure 12 - Sine wave frequency ratings
1.00E+05
500A
1.00E+04
R0878LC18x-21x
Issue 3
100% Duty Cycle
THs=85°C
1kA
1.5kA
2kA
1.00E+03
1.00E+03
4kA
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse Width (s)
1.00E-02
1.00E+00
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 9 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Figure 13 - Square wave frequency ratings
1.00E+05
500A
1kA
1.00E+04
R0878LC18x-21x
Issue 3
THs=55°C
di/dt=100A/µs
100% Duty Cycle
1.5kA
2kA
1.00E+03
4kA
1.00E+02
Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Figure 14 - Square wave frequency ratings
1.00E+05
500A
R0878LC18x-21x
Issue 3
THs=55°C
di/dt=500A/µs
1.00E+04
1kA
100% Duty Cycle
1.00E+03 2kA
1.5kA
4kA
1.00E+02
1.00E+01
1.00E+01
1.00E+00
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+00
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 15 - Square wave frequency ratings
1.00E+05
500A
R0878LC18x-21x
Issue 3
THs=85°C
di/dt=100A/µs
1.00E+04
1kA
100% Duty Cycle
1.5kA
2kA
1.00E+03
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
500A
R0878LC18x-21x
Issue 3
di/dt=500A/µs
THs=85°C
100% Duty Cycle
1kA
1.00E+03
1.5kA
2kA
1.00E+02
4kA
1.00E+02
1.00E+01
4kA
1.00E+01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E+00
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 10 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Distributed Gate Thyristor types R0878LC18x to R0878LC21x
Figure 17 - Square wave energy per pulse
1.00E+03
R0878LC18x-21x
Issue 3
di/dt=100A/µs
Tj=125°C
1.00E+02
Figure 18 - Square wave energy per pulse
1.00E+03
R0878LC18x-21x
Issue 3
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
4kA
1.00E+00
2kA
1.5kA
1kA
1.00E-01
500A
1.00E+01
4kA
2kA
1.00E+00
1.5kA
1kA
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
100000
Gate may temporarily lose control of conduction angle
R0878LC18x-21x
Issue 3
Tj (initial) = 125°C
1.00E+07
I2t: VRRM10V
I2t: 60% VRRM
10000
1.00E+06
ITSM: VRRM10V
ITSM: 60% VRRM
1000
1
3 5 10
Duration of surge (ms)
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
1.00E+05
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 11 of 12
August 2012


R0878LC18K (IXYS)
Distributed Gate Thyristor

No Preview Available !

Click to Download PDF File for PC

Outline Drawing & Ordering Information
Distributed Gate Thyristor types R0878LC18x to R0878LC21x
101A216
ORDERING INFORMATION
(Please quote 10 digit code as below)
R0878
LC
♦♦
Fixed
Type Code
Fixed
Outline Code
Off-state Voltage Code
VDRM/100
18-21
tq Code (200V/µs)
K=60µs, L=65µs, M=70µs
Typical order code: R0878LC20L – 2000V VDRM, 1800V VRRM, 65µs tq, 27mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
www.ixysuk.com
www.ixys.com
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: service@ixyslongbeach.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
© IXYS UK Westcode Ltd.
Data Sheet. Type R0878LC18x to R0878LC21x Issue 3
Page 12 of 12
August 2012




R0878LC18K.pdf
Click to Download PDF File