G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

Date:- 18 Feb, 2004
Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor
Type G1000L#250
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VDC-link
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Maximum continuous DC-link voltage.
MAXIMUM
LIMITS
2500
2500
18
1400
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Maximum turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
500
970
7.5
8.9
125x103
1000
160
8
100
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type G1000L#250 Issue 1
Page 1 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Characteristics
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
PARAMETER
VTM Maximum peak on-state voltage.
IL Latching current.
IH Holding current.
dv/dtcr Critical rate of rise of off-state voltage.
IDM Peak off state current.
IRM Peak reverse current.
IGKM Peak negative gate leakage current.
VGT Gate trigger voltage.
IGT Gate trigger current.
td Delay time.
tgt Turn-on time.
tf Fall time.
tgq Turn-off time.
Igq Turn-off gate current.
Qgq Turn-off gate charge.
ttail Tail time.
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink.
F Mounting force.
Wt Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120
-
-
-
10
-
-
TYP MAX TEST CONDITIONS
- 2.5 IG=2A, IT=1000A.
10 50 Tj=25°C.
10 50 Tj=25°C.
- - VD=80%VDRM, VGR=-2V.
- 30 Rated VDRM, VGR=-2V
- 50 Rated VRRM
- 50 VGR=-16V
1.2 - Tj=-40°C.
1.0 - Tj=25°C. VD=24V, RL=100m
0.8 - Tj=125°C.
1.5 4.0 Tj=-40°C.
0.8 2.0 Tj=25°C.
VD=24V, RL=100m
0.3 0.7 Tj=125°C.
VD=50%VDRM, ITGQ=1000A, IGM=20A, diG/dt=20A/µs
1.0 -
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD).
2.0 - Conditions as for td, (10%IGM to 10%VD).
VD=50%VDRM, ITGQ=1000A, CS=2µF,
1.0 -
diGQ/dt=25A/µs, VGR=-16V, (90%ITGQ to 10%IVD).
16
280
2000
40
-
19 Conditions as for tf, (10%IGQ to 10%ITGQ).
- Conditions as for tf.
3000 Conditions as for tf.
60 Conditions as for tf, (10%ITGQ to ITGQ<1A).
- Conditions as for tf.
- 0.05 Double side cooled.
- 0.13 Cathode side cooled.
- 0.08 Anode side cooled.
- 12 (see note 2).
300 - Housing option LL
170 - Housing option LM
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type G1000L#250 Issue 1
Page 2 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 3. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition. While not
given in the ratings, VDC should ideally be limited to 65% VDRM in this product.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 18 Volts.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves of figure 8.
The curves are effective over the normal operating range of the device and assume a snubber circuit
equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
Ls
Ds R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 10.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively
Vs should be limited to 600 Volts to avoid possible device failure.
Data Sheet. Type G1000L#250 Issue 1
Page 3 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-
off (see diagram 10) to exceed VRGM which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon
the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Data Sheet. Type G1000L#250 Issue 1
Page 4 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IG
IGM
100µs
Gate current
100µs
15V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Data Sheet. Type G1000L#250 Issue 1
Diagram 6.
Page 5 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode current
and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,
however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable
junction temperature range. The curves of figures 1 & 4 should be used in conjunction, when considering
forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest
junction temperature start-up condition.
Feedback
R1
Current-
sence
CT
Gate-drive
DUT
0.9VAK
C1 Vs
0.1IA
Not to scale
Anode current
Gate current
IGT Anode-Cathode
Voltage
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt
respectively, VD and i are also adjustable.
Cc Lc
R1
i Tx D
CT
Gate-drive
DUT
Cd Vd
Diagram 8, Turn-on test circuit.
The definitions of turn-on parameters used in the characteristic data are given in diagram 10 on page 8.
The gate circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.
The data in the curves of figure 5, gives the turn-on losses with snubber discharge, a snubber of the form
given in diagram 2 is assumed. Only typical losses are given due to the large number of variables which
effect Eon. It is unlikely that all negative aspects would appear in any one application, so typical figures can
be considered as worst case. Where the turn-on loss is higher than the figure given it will in most cases
be compensated by reduced turn-off losses, as variations in processing inversely effect many parameters.
For a worst case device, which would also have the lowest turn-off losses, Eon would be 1.5x values given
in the curves of figure 5. Turn-on losses are measured over the integral period specified below:-
10 µs
Eon = iv.dt
0
The turn-on loss can be sub-divided into two component parts, firstly that associated with tgt and secondly
the contribution of the voltage tail. For this series of devices tgt contributes 50% and the voltage tail 50%
(These figures are approximate and are influenced by several second order effects). The loss during tgt is
greatly affected by gate current and as with turn-on time, it can be reduced by increasing IGM. The turn-on
loss associated with the voltage tail is not effected by the gate conditions and can only be reduced by
limiting di/dt, where appropriate a turn-on snubber should be used. In applications where the snubber is
discharged through the GTO thyristor at turn-on, selection of discharge resistor will effect Eon. The curves
of figure 5 are given for a snubber as shown in diagram 2, with R=5, this is the lowest recommended
value giving the highest Eon, higher values will reduce Eon.
Data Sheet. Type G1000L#250 Issue 1
Page 6 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2.7 Turn-off characteristics
The basic circuit used for the turn-off test is given in diagram 9. Prior to the negative gate pulse being
applied constant current, equivalent to ITGQM, is established in the DUT. The switch Sx is opened just
before DUT is gated off with a reverse gate pulse as specified in the characteristic/data curves. After the
period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to
rise across DUT until Dc turns-on at a voltage set by the active clamp Cc, the voltage will be held at this
value until energy stored in Lx is depleted, after which it will fall to VDC .The value of Lx is selected to give
required VD Over the full tail time period. The overshoot voltage VDM is derived from Lc and forward voltage
characteristic of DC, typically VDM=1.2VD to 1.5VD depending on test settings. The gate is held reverse
biased through a low impedance circuit until the tail current is fully extinguished.
Lc
Dc
Sx RL
Lx Rs
CT Ds
Vd
i DX
Cs Cd
Gate- DUT
drive
Cc
Vc
RCD snubber
Diagram 9, Turn-off test circuit.
The definitions of turn-off parameters used in the characteristic data are given in diagram 10 on page 8.
Data Sheet. Type G1000L#250 Issue 1
Page 7 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Diagram 10, Turn-on and turn-off parameter definitions.
In addition to the turn-off figures given in characteristic data, the curves of figure 6 give the relationship of
QGQ to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due to a great dependence
upon the gate circuit impedance, which is a function of gate drive design not the device. The tgq is also, to
a lesser extent, affected by circuit impedance and as such the maximum figures given in data assume a
good low impedance circuit design. The minimum off time to re-fire the device is distinct from tgw, the gate
off time given in characteristics. The GTO thyristor may be safely re-triggered when a small amount of tail
current is still flowing. In contrast, the gate circuit must remain low impedance until the tail current has
fallen to zero or below a level which the higher impedance VGR circuit can sink without being pulled down
below –2 Volts. If the gate circuit is to be switched to a higher impedance before the tail current has
reached zero then the requirements of diagram 11 must be applied.
i tail
R
(VGR- itailR)>2V
VGR
Diagram 11.
The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to
decay to zero. The figure is applicable under all normal operating conditions for the device; provided
suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this
time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in
the curves of figure 7, the integration period for the losses is nominally taken to the end of the tail time
(Itail<1A) i.e. :-
tgt +ttail
Eoff iv.dt
0
Data Sheet. Type G1000L#250 Issue 1
Page 8 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
The curves of figure 7 give the turn-off energy with a fixed value of VDM and VD=50%VDRM. The curves are
for energy against turn-off current/snubber capacitance with a correction for voltage inset as an additional
graph (snubber equivalent to diagram 2 is assumed). From these curves a typical value of turn-off energy
for any combination of ITGQ/Cs and VD or VDM can be derived. Only typical data is included, to allow for the
trade-off with on-state voltage (VTM) which is a feature of these devices, see diagram 12. When calculating
losses in an application, the use of a maximum VTM and typical Eoff will (under normal operating
frequencies) give a more realistic value. The lowest VTM device of this type would have a maximum turn-
off energy of 1.5x the figure given in the curves of figures 7.
Trade-off between VTM & Eoff
E off
VTM
Diagram 12
Diagram 13.
2.8 Safe turn-off periphery
The necessity to control dv/dt at tun-off for the GTO thyristor implies a trade-off between ITGQ/VDM/Cs. This
information is given in the curves of figure 8. The information in these curves should be considered as
maximum limits and not implied operating conditions, some margin of 'safety' is advised with the
conditions of the curves reserved for occasional excursions. It should be noted that these curves are
derived at maximum junction temperature, however, they may be applied across the full operating
temperature range of the device provided additional precautions are taken. At very low temperature,
(below –10°C) the fall-time of device becomes very rapid and can give rise to very high turn-off voltage
spikes, as such it is advisable to reduce snubber loop inductance to <0.2µH to minimise this effect.
Data Sheet. Type G1000L#250 Issue 1
Page 9 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Curves
Figure 1 –Forward gate characteristics
100
G1000L#250
Issue 1
For Tj=-40°C to 125°C
Minimum
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Figure 2 - On-state characteristics of Limit device
10000
G1000L#250
Issue 1
Tj=25°C
Tj=125°C
Maximum
10 1000
1 100
0.1
0
0.5 1
Instantaneous forward gate voltage, VFG (V)
1.5
Figure 3 – Typical forward blocking voltage Vs.
external gate-cathode resistance
1.1
G1000L#250
Issue 1
10
0
246
Instantaneous on state voltage, VT (V)
Figure 4 – Gate trigger current
10
G1000L#250
Issue 1
Tj=125°C
1
8
`
0.9
0.8 1
0.7
0.6
0.5
1
10 100
External gate-cathode resistance, RGK
1000
0.1
-50
-25
0 25 50 75 100 125 150
Junction temperature, Tj (°C)
Data Sheet. Type G1000L#250 Issue 1
Page 10 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Figure 5 – Typical turn-on
(including snubber discharge)
0.35
0.3
G1000L#250
Issue 1
VD=50%VDRM,
IGM=20A, diFG/dt=10A/µs
Cs=2µF, Rs=5Ω,
Tj=125°C
energy per pulse
di/dt=300A/µs
Figure 6 – Maximum gate turn-off charge
3.5
G1000L#250
Issue 1
VD=50%VDRM, VDM=VDRM
diGQ/dt25A/µs,
3 Cs=2µF, Tj=125°C
0.25
0.2
0.15
di/dt=200A/µs
di/dt=100A/µs
2.5
2
1.5
1
0.1
0.5
0.05
0
500
1000
1500
Turn on current, ITM (A)
2000
0
0 200 400 600 800 1000
Turn off current, ITGQ (A)
Figure 7 – Typical turn-off energy per pulse
2
G1000L#250
Issue 1
1.8 VD=50%VDRM, VDM=2000V
diGQ/dt=25A/µs,
Tj=125°C
Cs=1µF
Cs=2µF
1.6
Figure 8 – Maximum permissible turn-off current
3.5
G1000L#250
Issue 1
VD=50%VDRM, VDM=VDRM
diGQ/dt=25A/µs,
3 LS<300nH, Tj=125°C
1.4
Cs=0.5µF
1.2
1
0.8
2.5
2
1.5
0.6
0.4
0.2
0
0
200
400
600
800
1000
1200
Turn off current, ITGQ (A)
1
0.5
0
0
500 1000
Turn off current, ITGQ (A)
1500
Data Sheet. Type G1000L#250 Issue 1
Page 11 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Figure 9 – Transient thermal impedance
0.1
G1000L#250
Issue 1
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Double side cooled
0.01
0.001
0.001
0.01
Figure 10 – Maximum i2t and surge ratings
100000
G1000L#250
Issue 1
Tj (initial) = 125°C
0.1
Time, t (s)
10000
1 10
1.00E+07
I2t: VRRM 10V
I2t: 60% VRRM
1.00E+06
ITSM: VRRM 10V
ITSM: 60% VRRM
1000
1
3 5 10
Duration of surge (ms)
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
1.00E+05
Data Sheet. Type G1000L#250 Issue 1
Page 12 of 13
February, 2004


G1000LM250 (IXYS)
Anode-Shorted Gate Turn-Off Thyristor

No Preview Available !

Click to Download PDF File for PC

WESTCODE An IXYS Company
Outline Drawing & Ordering Information
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
101A349
Outline Option LL
101A350
Outline Option LM
ORDERING INFORMATION
(Please quote 10 digit code as below)
G1000
Fixed
Type Code
L#
Outline Code
LL = 26mm Clamp height
LM = 17.5mm Clamp height
Typical order code: G1000LL250 – 2500V VDRM, 26mm clamp height capsule.
♦♦
Fixed Voltage Code
VDRM/100
25
0
Fixed Code
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
WESTCODE
An IXYS Company
www.westcode.com
www.ixys.com
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with
the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the
conditions and limits contained in this report.
© Westcode Semiconductors Ltd.
Data Sheet. Type G1000L#250 Issue 1
Page 13 of 13
February, 2004




G1000LM250.pdf
Click to Download PDF File