P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Date:- 07 August 2012
Data Sheet Issue:- K1
Fast Turn-off Thyristor
Types P0327WC08# & P0327WC12#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
800-1200
800-1200
800-1200
900-1300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VFGM
IFGM
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power (100µs pulse width)
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=80% VDRM, IFG=1A, tr1µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
330
120
670
525
3250
3575
63.9×1033
47×103
500
1000
12
18
5
1.5
60
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
A
V
W
W
V
°C
°C
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 1 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Characteristics
Fast turn-off thyristor types P0327WC08# & P0327WC12#
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
tq Turn-off time (note 2)
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
15
15
-
-
3.3
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.17 ITM=715A
- 1.55
- 0.87
- - VD=80% VDRM
- 30 Rated VDRM
- 30 Rated VRRM
- 3.0 Tj=25°C
- 200 Tj=25°C
VD=6V, IT=1A
- 600 Tj=25°C
45 -
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V
30 -
-
35
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
-
30
ITM=300A, tp=500µs, di/dt=50A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.095 Double side cooled
- 0.190 Single side cooled
- 5.5
70 -
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µC
µC
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 2 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Notes on Ratings and Characteristics
Fast turn-off thyristor types P0327WC08# & P0327WC12#
1.0 Voltage Grade Table
Voltage Grade
08
12
VDRM VDSM VRRM
V
800
1200
VRSM
V
900
1300
VD VR
DC V
540
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 3 of 12
August 2012


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Fast Turn-off Thyristor

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Fast turn-off thyristor types P0327WC08# & P0327WC12#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 100µs integration time.
100 µs
i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) E k + f Rth(J Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 4 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Fast turn-off thyristor types P0327WC08# & P0327WC12#
The total dissipation is now given by:
W(TOT) = W (original) + E f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
12.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 20V, 20with a short-circuit current rise time of not more than
1µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 5 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Curves
Figure 1 - On-state characteristics of Limit device
Fast turn-off thyristor types P0327WC08# & P0327WC12#
Figure 2 - Transient thermal impedance
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 6 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Fast turn-off thyristor types P0327WC08# & P0327WC12#
Figure 3 - Gate characteristics at 25°C junction temperature
Figure 4 - Gate trigger characteristic
Trigger point of all thyristors lie within the areas shown.
Gate drive load line must lie outside appropriate IG/VG rectangle
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 7 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Figure 5 – Typical recovered charge
Fast turn-off thyristor types P0327WC08# & P0327WC12#
Figure 6 - Sine wave frequency ratings
Figure 7 - Sine wave frequency ratings
Figure 8 - Sine wave energy per pulse
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 8 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Figure 9 - Square wave frequency ratings
Fast turn-off thyristor types P0327WC08# & P0327WC12#
Figure 10 - Square wave frequency ratings
Figure 11 - Square wave frequency ratings
Figure 12 - Square wave frequency ratings
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 9 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Figure 13 - Square wave energy per pulse
Fast turn-off thyristor types P0327WC08# & P0327WC12#
Figure 14 - Square wave energy per pulse
Figure 15 – Maximum reverse recovery energy loss per pulse at Tj = 125°C and Vrrm = 804 volts
Figure 16 - Maximum surge and I2t Ratings
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 10 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Fast turn-off thyristor types P0327WC08# & P0327WC12#
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 11 of 12
August 2012


P0327WC08F (IXYS)
Fast Turn-off Thyristor

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Outline Drawing & Ordering Information
Fast turn-off thyristor types P0327WC08# & P0327WC12#
ORDERING INFORMATION
P0327
Fixed
Type Code
WC
Fixed
Outline Code
Typical order code: P0327WC12D – 1200V VDRM, 20µs tq
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
(Please quote 10 digit code as below)
♦♦
Off-state Voltage Code
VDRM/100
08 -12
tq Code
C=15µs, D=20µs, E=25µs,
F=30µs
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
www.ixysuk.com
www.ixys.com
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: service@ixyslongbeach.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
© IXYS UK Westcode Ltd.
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1
Page 12 of 12
August 2012




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