VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
RDS(on)的典型值是 0.15Ω,低电容,开关速度快。
Typical RDS(on)=0.15,low intrinsic capacitance Ciss, fast switching.
用途 / Applications
显示器监控,不间断电源,DC-DC 转换。
Monitor displays, UPS,DC-DC converters.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。 See Marking Instructions.
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VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain- gate Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Total Power Dissipation
Insulation Withstand Voltage
Junction Temperature Range
Storage Temperature Range
符号
Symbol
VDS
VDGR
VGS
ID(Tc=25)
IDM
PTOT
VISO
Tj
Tstg
DATA SHEET
数值
Rating
200
200
±30
20
72
125
2500
150
-55150
单位
Unit
V
V
V
A
A
W
V
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Forward On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
符号
Symbol
V(BR)DSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
Ciss
Coss
Crss
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=VGS
ID=250μA
VGS=10V ID=12A
VDS=200V
VGS=30V
VGS=-30V
VGS=0V
Tj=25
VGS=0V
VDS=0V
VDS=0V
ISD=12A
VGS=0V
f=1.0MHz
VDS=20V
最小值 典型值 最大值 单位
Min Typ Max Unit
200 V
2.0 3.0 4.0 V
0.15 0.18
10
100
-100
μA
nA
1.3 V
900
180 pF
70
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VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
印章说明 / Marking Instructions
BR
****
VTI640
DATA SHEET

说明:
BR:  
VTI640: 
****: 
Note:
BR:   
VTI640:
****: 
为公司代码
为产品型号
为生产批号代码,随生产批号变化。
Company Code
Product Type.
Lot No. Code, code change with Lot No.
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VTI640 (BLUE ROCKET ELECTRONICS)
N-CHANNEL MOSFET

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VTI640
Rev.D Mar.-2016
波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free)
DATA SHEET
说明:
1、预热温度 25150℃,时间 6090sec;
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
3、焊接制程冷却速度为 210/sec.
Note:
1.Preheating:25~150, Time:60~90sec.
2.Peak Temp.:255±5, Duration:5±0.5sec.
3. Cooling Speed: 2~10/sec.
耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions
温度:270±5
时间:10±1 sec.
Temp.:270±5
Time:10±1 sec
包装规格 / Packaging SPEC.
散件包装 / BULK
Package Type
封装形式
TO-220/F
Units/Bag
/
200
Bags/Inner Box
/
10
Units 包装数量
Units/Inner Box Inner Boxes/Outer Box
/
/
2,000
5
Units/Outer Box
/
10,000
Dimension 包装尺寸 (unitmm3)
Bag
Inner Box
Outer Box
135×190 237×172×102 560×245×195
套管包装 / TUBE
Package Type
封装形式
TO-220/F
Units/Tube
/套管
50
Tubes/Inner Box
套管/
20
Units 包装数量
Units/Inner Box Inner Boxes/Outer Box
/
/
1,000
5
Units/Outer Box
/
5,000
Dimension 包装尺寸 (unitmm3)
Tube 套管
Inner Box
Outer Box
532×31.4×5.5 555×164×50 575×290×180
使用说明 / Notices
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