J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3
GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
– 30
– 30
10
350
2.8
Lead Temperature
(1/16from Case for 10 Seconds)
TL 300
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
Gate – Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yos
Re(yfs)
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
30
– 2.0
5.0
4500
Max Unit
100
– 6.0
Vdc
pA
Vdc
mA
15
50
7500
mmhos
mmhos
REV 1
4–144
Motorola Small–Signal Transistors, FETs and Diodes Device Data


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

POWER GAIN
24
f = 100 MHz
20
16
12 400 MHz
8.0 Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
4.0
0 2.0 4.0 6.0 8.0 10 12 14
ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
J304
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
L1
C1
C5
RgL3
C6
C2
VGS
C3
C4
CASE
L2
C7
TO 500
LOAD
COMMON
VDS
+15 V
ID = 5.0 mA
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
VALUE
100 MHz 400 MHz
7.0 pF
1000 pF
1.8 pF
17 pF
3.0 pF
1.0 pF
1–12 pF 0.8–8.0 pF
1–12 pF 0.8–8.0 pF
0.0015 µF
0.0015 µF
3.0 µH*
0.15 µH*
0.14 µH*
0.001 µF
0.001 µF
0.2 µH**
0.03 µH**
0.022 µH**
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16long,
3/8I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4long,
3/8I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4I.D.
(AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–145


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

J304
10
8.0
6.0
4.0
f = 400 MHz
NOISE FIGURE
(Tchannel = 25°C)
6.5
ID = 5.0 mA
5.5
4.5
3.5
f = 400 MHz
VDS = 15 V
VGS = 0 V
2.0
100 MHz
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Effects of Drain–Source Voltage
2.5 100 MHz
1.5
0 2.0 4.0 6.0 8.0 10 12
ID, DRAIN CURRENT (mA)
Figure 4. Effects of Drain Current
INTERMODULATION CHARACTERISTICS
+ 40
+ 20
0 VDS = 15 Vdc
f1 = 399 MHz
– 20 f2 = 400 MHz
– 40
3RD ORDER INTERCEPT
– 60
– 80
– 100
– 120
– 140
– 160
– 120
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
– 100 – 80 – 60 – 40 – 20
Pin, INPUT POWER PER TONE (dB)
0
+ 20
Figure 5. Third Order Intermodulation Distortion
14
4–146
Motorola Small–Signal Transistors, FETs and Diodes Device Data


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
J304
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
bis @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 6. Input Admittance (yis)
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
10
grs @ IDSS, 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 7. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 8. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 9. Output Admittance (yos)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–147


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

J304
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20° 10°
0° 350° 340°
330°
40° 1.0 100 ID = 0.25 IDSS 320°
100 200
200 300
0.9
50° 400 310°
300
60°
0.8
ID = IDSS
400
500
300°
600
70° 0.7 500 290°
600 700
80° 0.6 700 800 280°
90°
800
900
900
270°
100° 260°
30°
20° 10°
0° 350° 340°
330°
40° 0.4 320°
50° ID = IDSS, 0.25 IDSS
900
800
60° 600 700
70° 500
400
80° 300
200
90° 100
100°
0.3
0.2
0.1
0.0
310°
300°
290°
280°
270°
260°
110° 250° 110° 250°
120° 240° 120° 240°
130° 230° 130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 10. S11s
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 11. S12s
30°
20° 10°
0° 350° 340°
330°
40° 320°
0.6
50°
0.5
60°
70° 900
800
900
0.4
80° 700 800
0.3
90° 600 700 ID = 0.25 IDSS
600
100° 500
500
0.3
400 100
110° 400
300 200 0.4
300
120°
ID = IDSS
200 100 0.5
130°
0.6
310°
300°
290°
280°
270°
260°
250°
240°
230°
30°
20° 10°
0° 350° 340°
330°
40°
100
1.0
200
100 200
300
ID
400
500
=
0.25
IDSS
320°
300
400
0.9 500
600
700
50°
ID = IDSS
0.8
600 800
700
800 900 900
310°
60° 300°
70° 0.7 290°
80° 280°
0.6
90° 270°
100° 260°
110° 250°
120° 240°
130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 12. S21s
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 13. S22s
4–148
Motorola Small–Signal Transistors, FETs and Diodes Device Data


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
J304
20
10
7.0 gig @ IDSS
5.0
3.0 grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
big @ IDSS
20 30
big @ 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 14. Input Admittance (yig)
0.5
0.3
0.2 brg @ IDSS
0.1
0.07
0.05
0.03 0.25 IDSS
0.02
0.01
0.007
0.005
10
gig @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 15. Reverse Transfer Admittance (yrg)
10
7.0 gfg @ IDSS
5.0
3.0 gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3 bfg @ IDSS
0.2 brg @ 0.25 IDSS
0.1
10
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 16. Forward Transfer Admittance (yfg)
1.0
0.7 bog @ IDSS, 0.25 IDSS
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
gog @ IDSS
gog @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 17. Output Admittance (yog)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–149


J304 (Motorola)
JFET High Frequency Amplifier

No Preview Available !

Click to Download PDF File for PC

J304
30°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
20° 10°
0° 350° 340°
330°
0.7
ID = 0.25 IDSS
100 200 300
0.6 400
100
0.5
200
300
400
500
600
700
500
0.4 ID = IDSS 600
700
800
900
0.3 800
900
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
30°
20° 10°
0° 350° 340°
330°
40° 0.04 320°
0.03
50°
0.02
60°
70° 0.01
80°
0.0
100
90°
500
100°
600
600 ID = 0.25 IDSS
ID = IDSS
110°
700
700 0.01
800
120° 800
0.02
900
130°
900 0.03
310°
300°
290°
280°
270°
260°
250°
240°
230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 18. S11g
140° 0.04 220°
150° 160° 170° 180° 190° 200° 210°
Figure 19. S12g
30°
20° 10°
0° 350° 340°
330°
40° 0.5 320°
100
0.4
50°
100
ID = IDSS
310°
0.3
60° 300°
70°
0.2
ID = 0.25 IDSS
290°
80° 280°
0.1
900
90° 270°
900
100° 260°
110° 250°
120° 240°
130° 230°
30°
20° 10°
0° 350° 340°
330°
1.5 300
40°
1.0 200
100
500
400
600
700
320°
0.9 800 900
50°
ID = IDSS, 0.25 IDSS
310°
0.8
60° 300°
70° 0.7 290°
80° 280°
0.6
90° 270°
100° 260°
110° 250°
120° 240°
130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 20. S21g
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 21. S22g
4–150
Motorola Small–Signal Transistors, FETs and Diodes Device Data




Click to Download PDF File