D6SBN20 (SHINDENGEN)
SBD Bridge

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SBD Bridge
D6SBN20
200V 6A
特長
• 薄型 SIP パッケージ
• SBD ブリッジ
• 低 VF・低 IR
Feature
• Thin-SIP
• SBD Bridge
• Low VF・Low IR
シングルインライン型
Single In-line Package
■外観図 OUTLINE
Package5S
Unit : mm
Weight : 6.3g(typ.)
D6SBN 20 0264
■定格表 RATINGS
外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Short Form Catalog. As for the marking, refer to the specification “Marking,
Terminal Connection.”
Item
Storage Temperature
Operation Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Dielectric Strength
Mounting Torque
Symbol Conditions
Type No.
50Hz sine wave, Resistance load
With heatsink
Without heatsink
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25
Terminals to Case, AC 1 minute
Recommended torque : 0.5 N m
D6SBN20
Unit
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Pulse measurement, per diode
Pulse measurement, per diode
per diode
junction to case, With heatsink
l junction to lead
junction to ambient
194 J534-1


D6SBN20 (SHINDENGEN)
SBD Bridge

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Thin SIP Bridge
■特性図 CHARACTERISTIC DIAGRAMS
D6SBN20
* Sine wave は 50Hz で測定しています。
50Hz sine wave is used for measurements.
*半導体製品の特性は一般的にバラツキを持っております。
 Typical は統計的な実力を表しています。
Semiconductor products generally have characterristic variation.
Typical is a statistical average of the device’s ability.
J534-1195


D6SBN20 (SHINDENGEN)
SBD Bridge

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Click to Download PDF File for PC



D6SBN20 (SHINDENGEN)
SBD Bridge

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D6SBN20.pdf
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