TSA50R240S1 (Truesemi)
N-Channel MOSFET

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TSA50R240S1
500V 18A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 550V @TJ = 150
• Typ. RDS(on) = 0.21Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
500
18*
11*
55*
±30
284
2.4
0.43
15
104
-55 to +150
300
Value
1.2
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Unit
/W
/W
/W
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 500V, VGS = 0V
TJ = 150
500
--
--
--
--
550
0.6
--
10
--
--
--
1
--
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
-- -- 100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 9A
2.5 -- 4.5
-- 0.21 0.24
gFS
Forward Trans conductance VDS = 40V, ID = 18A
-- 16
--
Rg
Gate resietance
f = 1MHz ,open drain
-- 3.5 --
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 800
-- 340
-- 10
--
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
Ω
pF
pF
pF
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 9A
RG = 20Ω(Note 4)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 9A
Qgs
Gate-Source Charge
VGS = 10V (Note 4)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 9A
trr
Reverse Recovery Time
VGS = 0V, IF = 9A
Qrr Reverse Recovery Charge diF/dt =100A/µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.IAS=2.4A, VDD=50V, Starting TJ=25
3. ISD≤18A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
-- 13
-- 11
-- 100
-- 12
-- 43
-- 5
-- 22
-­
-­
-­
-­
--
-­
-­
ns
ns
ns
ns
nC
nC
nC
-- -­
-- -­
-- 0.9
-- 345
-- 4.5
18
55
1.5
-­
-­
A
A
V
ns
µC
2
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Typical Performance Characteristics
Power dissipation
Max. transient thermal impedance
Safe operating area TC=25 ℃
Safe operating area TC=80℃
ID=f(VDS); TC=25 ; VGS > 7V;
D=0; parameter tp
© 2015 Truesemi Semiconductor Corporation
ID=f(VDS); TC=80 ; VGS > 7V;
D=0; parameter tp
3
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Typical Performance Characteristics
Typ. output characteristic
Typ. output characteristic
ID=f(VDS); Tj=25 ;
parameter tp=10us,VGS
Typ. Drain-Source on resistance
ID=f(VDS); Tj=125 ;
parameter tp=10us,VGS
Typ. Drain-Source on resistance
RDson=f(ID); Tj=125 ; parameter VGS
© 2015 Truesemi Semiconductor Corporation
RDson=f(Tj); Tj=125 ; parameter
ID=6.5A VGS=10V
4
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Typical Performance Characteristics
Typ. Transfer characteristic
Typ. gate charge
ID=f(VDS); VDS=20V ;
parameter tp=10us,
Avalanche energy
VGS=f(Qg), ID=6.5 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=2.4 A; VDD=50 V
© 2015 Truesemi Semiconductor Corporation
VBR(DSS)=f(Tj); ID=1 mA
5
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Typical Performance Characteristics
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
Forward characteristics of reverse diode
EOSS=f(VDS)
IF=f(VSD); parameter: Tj
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Test circuits
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
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TSA50R240S1 (Truesemi)
N-Channel MOSFET

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Package Outline TO-3P
© 2015 Truesemi Semiconductor Corporation
9
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