SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
®
P-Channel Enhancement Mode MOSFET
Features
-20V/-11A,
R
DS(ON)
=
17m(max.)
@
V
GS
=-4.5V
RDS(ON) = 25m(max.) @ VGS =-2.5V
RDS(ON) = 45m(max.) @ VGS =-1.8V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
HBM ESD protection level pass 2KV
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Applications
Portable Equipment and Battery Powered
Systems.
Pin Description
DDDD
S S SG
DFN3.3x3.3-8
( 5,6,7,8 )
D D DD
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM3407PS
SM3407PS QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3407P
XXXXX
Package Code
QA : DFN3.3x3.3-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
1
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID a
IDM a
ID c
IS a
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=-4.5V)
Pulsed Drain Current (VGS=-4.5V)
Continuous Drain Current
Diode Continuous Forward Current
TA=25°C
TA=70°C
TC=25°C
TC=100°C
-20
±12
-11
-8.8
-44 *
-35
-22
-10
V
A
TJ
IAS d
EAS d
TSTG
Maximum Junction Temperature
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Storage Temperature Range
L=0.5mH
L=0.5mH
150
-12
36
-55 to 150
°C
A
mJ
°C
PD a Maximum Power Dissipation
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
TC=25°C
TC=100°C
3.1
2
31.25
12.5
W
RθJA a,b Thermal Resistance-Junction to Ambient
t 10s
Steady State
40 °C/W
80
RθJC c Thermal Resistance-Junction to Case
4 °C/W
Note *Package limited.
Note aSurface Mounted on 1in2 pad area, t 10sec.
Note bMaximum under Steady State conditions is 75 °C/W.
Note cThe power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RθJC) when additional heat sink is used.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
2
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
®
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON) e
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-11A
VGS=-2.5V, IDS=-6A
-20
-
-
-0.5
-
-
-
Diode Characteristics
VSD e Diode Forward Voltage
trr f Reverse Recovery Time
Qrr f Reverse Recovery Charge
Dynamic Characteristics f
VGS=-1.8V, IDS=-1A
-
ISD=-1A, VGS=0V
ISD=-11A, dlSD/dt=100A/µs
-
-
-
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10,
IDS=-1A, VGEN=-4.5V,
RG=6
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-11A
-
-
-
Note ePulse test; pulse width300µs, duty cycle2%.
Note fGuaranteed by design, not subject to production testing.
Typ.
-
-
-
-
-
13
18
26
-0.7
63
54
1620
320
290
9
13
26
167
25
1.6
11
Max.
-
-1
-30
-1
±10
17
25
45
-1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
V
µA
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Typical Operating Characteristics
®
Power Dissipation
35
30
25
20
15
10
5
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
40
35
30
25
20
15
10
5
T =25oC,V =-4.5V
CG
0
0 20 40 60 80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
100
10 1ms
T =25oC
1C
0.1
1
10ms
DC
10 50
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
1E-3
R :4oC/W
θJC
0.01 0.1
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Typical Operating Characteristics (Cont.)
®
Output Characteristics
50
V =-2.5,-3,-4,-5,-6,
GS
-7,-8,-9,-10V
40
30
-2V
20
10
-1.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
60
50
V =-1.8V
GS
40
30
V =-2.5V
20 GS
V =-4.5V
GS
10
0
0 8 16 24 32 40
-ID - Drain Current (A)
Gate-Source On Resistance
60
I =-11A
DS
50
40
30
20
10
0
1 2 3 4 5 6 7 8 9 10
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=-250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Typical Operating Characteristics (Cont.)
®
Drain-Source On Resistance
1.8
V = -4.5V
GS
I = -11A
1.6 DS
1.4
1.2
1.0
0.8
0.6
R @T =25oC:
ON j
13m
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
40
10
T =150oC
j
T =25oC
j
1
0.1
0.0 0.3 0.6 0.9 1.2 1.5
-VSD - Source - Drain Voltage (V)
Capacitance
3000
2700
Frequency=1MHz
2400
2100
1800
1500
Ciss
1200
900
600
Crss
300
Coss
0
0 4 8 12 16 20
-VDS - Drain - Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
6
Gate Charge
10
V =-10V
DS
9 I =-11A
DS
8
7
6
5
4
3
2
1
00 10 20 30 40
QG - Gate Charge (nC)
50
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Typical Operating Characteristics (Cont.)
Transfer Characteristics
35
30
25
20
15 T =125oC
j
10
T =25oC
j
5
T =-55oC
j
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-Source Voltage (V)
®
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Avalanche Test Circuit and Waveforms
®
DUT
VDS
L
RG
tp
VDD
IL
0.01
tAV
VDD
IAS
tp VDSX(SUS)
EAS
VDS
Switching Time Test Circuit and Waveforms
DUT
VGS
RG
tp
VDS
RD
VDD
VGS
10%
td(on) tr
90%
VDS
td(off) tf
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Package Information
DFN3.3x3.3-8
D
D1
®
D2
be
S DFN3.3x3.3-8 RECOMMENDED LAND PATTERN
Y
M
B
MILLIMETERS
O
L
MIN.
MAX.
INCHES
MIN.
MAX.
2.6
A 0.70
1.00
0.028
0.039
0.47
A1 0.00
0.05
0.000
0.002
b 0.25
0.35
0.010
0.014
c 0.14
0.20
0.006
0.008
D 3.10
D1 3.05
3.50
3.25
0.122
0.120
0.138
0.128
0.54
D2 2.35
E 3.10
2.55
3.50
0.093
0.122
0.100
0.138
0.65
E1 2.90
3.10
E2 1.64
1.84
e 0.65 BSC
0.114
0.122
0.065
0.072
0.026 BSC
UNIT: mm
H 0.32
0.52
0.013
0.020
K 0.59
0.79
0.023
0.031
L 0.25
0.55
0.010
0.022
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Carrier Tape & Reel Dimensions
P2
D0
P0
B-B
D1
P1
®
E1
F
W
T
B0
K0
A-A B-B
A0
A-A
d
T1
Application
A
H T1
C
d
330.0±2.00 50 MIN.
D FN 3.3x3.3-8
(punch type)
P0
P1
4.0±0.10 8.0±0.10
13.4±1.0
P2
2.0±0.05
13.0+0.50
-0.20
D0
1.5+0.10
-0.00
1.5 MIN.
D1
1.5 MIN.
D W E1
20.2 MIN. 12.0±0.30 1.75±0.10
T A0 B0
0.3±0.05 3.6±0.20 3.6±0.20
F
5.5±0.05
K0
1.1±0.20
(mm)
Copyright © Sinopower Semiconductor, Inc.
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
Taping Direction Information
DFN3.3x3.3-8
USER DIRECTION OF FEED
®
Classification Profile
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SM3407PSQA (Sinopower)
P-Channel Enhancement Mode MOSFET

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SM3407PSQA
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
3 °C/second max.
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
3°C/second max.
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<3 50
Volume mm3
350
<2.5 mm
235 °C
220 °C
2.5 mm
220 °C
220 °C
Table 2. Pb-free Process Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
1.6 mm 2.5 mm
260 °C
260 °C
2.5 mm
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HTRB
HTGB
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
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