SIHB22N60AE (Vishay)
MOSFET

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SiHB22N60AE
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
96
12
25
Single
0.156
D2PAK (TO-263)
GD
S
D
G
S
N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-Free and Halogen-Free
D2PAK (TO-263)
SiHB22N60AE-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak temperature) c
For 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.8 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
20
12
49
1.4
204
179
-55 to +150
70
31
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S16-1715-Rev. A, 29-Aug-16
1
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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SiHB22N60AE
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VDS/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 A
VDS = 30 V, ID = 11 A
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 11 A, VDS = 480 V
VDD = 480 V, ID = 11 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
-
-
TYP.
-
0.72
-
-
-
-
-
0.156
4.8
1451
73
5
50
258
48
12
25
19
33
45
21
0.6
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 V
--
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 11 A,
dI/dt = 100 A/μs, VR = 25 V
- 319
- 4.9
- 28
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX.
-
-
4
± 100
±1
1
10
0.180
-
-
-
-
-
-
96
-
-
38
66
90
42
1.2
20
49
1.2
638
9.8
-
UNIT
V
V/°C
V
nA
μA
μA
S
pF
nC
ns
A
V
ns
μC
A
S16-1715-Rev. A, 29-Aug-16
2
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHB22N60AE
Vishay Siliconix
50
TOP 15 V
14 V
13 V
12 V
40 11 V
10 V
9V
8V
7V
30 6 V
BOTTOM 5 V
TJ = 25 °C
20
10
0
0 5 10 15
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
20
3.0
ID = 11 A
2.5
2.0
1.5
1.0
VGS = 10 V
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
30
TOP 15 V
14 V
13 V
12 V
24 11 V
10 V
9V
8V
7V
18 6 V
BOTTOM 5 V
TJ = 150 °C
12
6
100 000
10 000
1000
100
10
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
0 5 10 15
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
20
1
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
50
TJ = 25 °C
40
TJ = 150 °C
30
20
5000
Coss
500
12
10
Eoss
8
6
4
10
0
0
VDS = 29.2 V
5 10 15
VGS, Gate-to-Source Voltage (V)
20
50
0
2
0
100 200 300 400 500 600
VDS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S16-1715-Rev. A, 29-Aug-16
3
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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SiHB22N60AE
Vishay Siliconix
12
VDS = 480 V
VDS = 300 V
VDS = 120 V
9
20
15
6 10
35
0
0 15 30 45 60
Qg, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage (V)
1.4
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100 Operation in this area
limited by RDS(on)
IDM limited
10
Limited by RDS(on)*
1
100 μs
1 ms
0.1
0.01
1
TC = 25 °C
TJ = 150 °C
Single pulse
10 ms
BVDSS limited
10 100 1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
775
750
725
700
675
650
625
ID = 250 μA
600
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
S16-1715-Rev. A, 29-Aug-16
4
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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SiHB22N60AE
Vishay Siliconix
1
Duty cycle = 0.5
0.2
0.1 0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
+- VDD
Fig. 13 - Switching Time Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 14 - Switching Time Waveforms
Vary tp to obtain
required IAS
VDS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- VDD
Fig. 15 - Unclamped Inductive Test Circuit
10 V
Qgs
VG
Qg
Qgd
Charge
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 μF
0.3 μF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S16-1715-Rev. A, 29-Aug-16
5
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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D.U.T.
+
2
-
1
Rg
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
• Low stray inductance
3 • Ground plane
• Low leakage inductance
current transformer
-
- 4+
SiHB22N60AE
Vishay Siliconix
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
- VDD
1 Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V a
2 D.U.T. ISD waveform
Reverse
recovery
current
3
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
4
Inductor current
Body diode forward drop
V DD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
ISD
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91922.
S16-1715-Rev. A, 29-Aug-16
6
Document Number: 91922
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SIHB22N60AE (Vishay)
MOSFET

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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
1 Document Number: 91000




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