MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
Switch-mode
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
1.7 Grams (D2PAK−3)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
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SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B60H100G
AKA
D2PAK−3
CASE 418B
STYLE 3
AYWW
B60H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package Shipping
MBR60H100CTG
TO−220 50 Units/Rail
(Pb−Free)
MBRB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
NRVBB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR60H100CT/D


MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 155°C)
Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
100
30
60
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFRM 60 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 350 A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
Symbol
RqJC
RqJA
Value
1.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
vF V
− 0.80 0.84
− 0.68 0.72
− 0.93 0.98
− 0.81 0.84
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR mA
− 2.0 10
0.0013
0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
TYPICAL CHARACTERISTICS
100 100
175°C
10
TJ = 150°C
1.0
125°C
25°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
175°C
10
TJ = 150°C
1.0
125°C
25°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1E−01
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1E−01
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
100 0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
100
48
44 dc
40
36 SQUARE WAVE
32
28
24
20
16
12
8.0
4.0
0
130 135 140 145 150 155 160 165 170 175 180
TC, CASE TEMPERATURE (C°)
Figure 5. Current Derating, Case Per Leg
26
24
22
20
18
16
14
12
10
8.0 SQUARE WAVE
6.0
4.0
2.0
0
0 25 50
dc
dc
75
RATED VOLTAGE APPLIED
RqJA = 16° C/W
RqJA = 70° C/W
(NO HEATSINK)
100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Current Derating, Ambient Per Leg
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MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
TYPICAL CHARACTERISTICS
60
56
52
TJ = 175°C
48
SQUARE WAVE
44
40
36
32
dc
28
24
20
16
12
8
4
0
0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
10000
1000
100
10
0
Figure 7. Forward Power Dissipation
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
100
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MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 9. Test Circuit
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 10. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
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MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
PACKAGE DIMENSIONS
D2PAK−3
CASE 418B−04
ISSUE K
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
A
W
J
H
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
P
L
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
F
VIEW W−W
1
FF
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRB60H100CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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MBR60H100CT/D




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