NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG,
NRVBB40L45CTT4G
Switch-mode
Power Rectifier
45 V, 40 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube for TO−220
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
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SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES, 45 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B40L45G
AKA
1
3
4 D2PAK 3
CASE 418B
STYLE 3
AY WW
B40L45G
AKA
B40L45
A
Y
WW
G
AKA
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
Device
Package
MBR40L45CTG
TO−220
(Pb−Free)
NRVBB40L45CTT4G D2PAK 3
(Pb−Free)
Shipping
50 Units/Rail
800 /Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR40L45CT/D


NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG, NRVBB40L45CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 145°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half-wave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
20
40
200
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
−65 to +175
−65 to +175
10,000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
Value
1.9
72.9
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF V
0.50
0.48
0.63
0.68
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR mA
1.2
275
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG, NRVBB40L45CTT4G
TYPICAL CHARACTERISTICS
1000
1000
100
150°C
10
25°C
125°C
1
100
150°C
10
25°C
125°C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.6
1E+00
1E−01
1E−02
150°C
125°C
1E+00
1E−01
1E−02
150°C
125°C
1E−03
1E−03
1E−04
25°C
1E−04
25°C
1E−05
0
1E−05
5 10 15 20 25 30 35 40 45 50
0
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
5 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
50
45 dc
40
35 Square Wave
30
25
20
15
10
5
0
80 90 100 110 120 130 140 150 160 170 180
TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating for MBR40L45CTG
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NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG, NRVBB40L45CTT4G
TYPICAL CHARACTERISTICS
30 10000
28
26
24
22 Square Wave
20
25°C
18
16 dc
14 1000
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
100
0 5 10 15 20 25 30 35 40 45
Io, AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 6. Forward Power Dissipation
Figure 7. Capacitance
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
0.01 SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
T1, TIME (sec)
Figure 8. Thermal Response
Junction−to−Case for MBR40L45CTG
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10 100 1000
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NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG, NRVBB40L45CTT4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 3:
PIN 1. ANODE
P
2. CATHODE
3. ANODE
4. CATHODE
L
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NRVBB40L45CTT4G (ON Semiconductor)
Switch-mode Power Rectifier

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MBR40L45CTG, NRVBB40L45CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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USA/Canada
Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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MBR40L45CT/D




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