PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID
10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
10
7
30
Avalanche Current
IAS 10
Avalanche Energy
L =0.1mH
EAS
5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.5
62.5
UNITS
°C / W
REV 1.2
1 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3 1.9 2.3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
103 170
93 140
Forward Transconductance1
gfs
VDS = 10V, ID = 5A
13 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 10 V,
VDS = 50V, ID = 5A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 5A, VGS = 10V, RGEN = 6Ω
Fall Time2
tf
330
50 pF
22
8.6
1.2 nC
3.5
22
60
nS
30
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
10 A
Forward Voltage1
VSD IF = 5A, VGS = 0V
1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / μS
25 nS
25 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.2
2 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
REV 1.2
3 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
REV 1.2
4 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异,不影响电性及Layout。
REV 1.2
5
2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.2
6 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
REV 1.2
7 2015/7/29


PA410BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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PA410BD
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.2
8 2015/7/29




PA410BD.pdf
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