P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current2
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
25
16
75
16
Avalanche Energy2
EAS 128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=1mH,VDD=50V.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.5 °C / W
REV 1.3 1 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3
V
2 2.5
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
35 48
28 37
Forward Transconductance1
gfs
VDS = 10V, ID = 10A
23 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 10V,
VDS = 50V, ID = 10A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID @ 10A, VGS = 10V, RGS = 6Ω
Fall Time2
tf
996
127 pF
53
1Ω
25
3.9 nC
8
29
2
nS
39
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
25 A
Forward Voltage1
VSD IF = 10A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
36 nS
52 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.3 2 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
REV 1.3 3 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
REV 1.3 4 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异,不影响电性及Layout。
REV 1.3
5
2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.3 6 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
REV 1.3 7 2016/6/2


P3710BD (UNIKC)
N-Channel Enhancement Mode MOSFET

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P3710BD
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.3 8 2016/6/2




P3710BD.pdf
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