NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

NVATS5A113PLZ
Power MOSFET
60 V, 29.5 m, 38 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
PW 10 s, duty cycle 1%
Power Dissipation
Tc = 25C
ID
IDP
PD
Value
60
20
38
114
60
Unit
V
V
A
A
W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
95 mJ
Avalanche Current (Note 3)
IAV
18 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 18 A
3 : L 500 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol
RJC
Value
2.5
Unit
C/W
Junction to Ambient (Note 4)
RJA
80.1
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
C/W
www.onsemi.com
VDSS
60 V
RDS(on) Max
29.5 m@ 10 V
38 m@ 4.5 V
44 m@ 4 V
ID Max
38 A
ELECTRICAL CONNECTION
P-Channel
2, 4
1 1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A113PLZ/D


NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

NVATS5A113PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2 2.6 V
Forward Transconductance
gFS VDS = 10 V, ID = 18 A
37 S
Static Drain to Source On-State
Resistance
RDS(on)
ID = 18 A, VGS = 10 V
ID = 9 A, VGS = 4.5 V
ID = 5 A, VGS = 4 V
22.5 29.5 m
27 38 m
29 44 m
Input Capacitance
Ciss
2,400
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
250 pF
Reverse Transfer Capacitance
Crss
195 pF
Turn-ON Delay Time
td(on)
15 ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.1
125 ns
250 ns
Fall Time
tf
200 ns
Total Gate Charge
Qg
55 nC
Gate to Source Charge
Qgs VDS = 30 V, VGS = 10 V, ID = 35 A
7.5 nC
Gate to Drain “Miller” Charge
Qgd
12 nC
Forward Diode Voltage
VSD
IS = 35 A, VGS = 0 V
0.98
1.5 V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
www.onsemi.com
2


NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

NVATS5A113PLZ
www.onsemi.com
3


NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

NVATS5A113PLZ
www.onsemi.com
4


NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

PACKAGE DIMENSIONS
unit : mm
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
NVATS5A113PLZ
4
2
13
1 : Gate
2 : Drain
3 : Source
4 : Drain
RECOMMENDED
SOLDERING FOOTPRINT
6.5
1.5
2.3 2.3
www.onsemi.com
5


NVATS5A113PLZ (ON Semiconductor)
Power MOSFET

No Preview Available !

Click to Download PDF File for PC

NVATS5A113PLZ
ORDERING INFORMATION
Device
NVATS5A113PLZT4G
Marking
ATP113
Package
DPAK(Single Gauge) / ATPAK
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NVATS5A113PLZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
6




NVATS5A113PLZ.pdf
Click to Download PDF File