D2403 (Renesas)
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DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2403 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Base current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
IB(pulse)
PT
Tj
Tstg
Conditions
PW 10 ms
duty cycle 50 %
PW 10 ms
duty cycle 50 %
16 cm2 × 0.7 mm ceramic board mounted
Ratings
80
60
6.0
3.0
5.0
0.2
0.4
2.0
150
55 to +150
Unit
V
V
V
A
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I&%2
I(%2
h)(
h)(
V%(
V&( VDW 
V&( VDW 
V%( VDW
f7
CRE
tRQ
tVWJ
tI
Conditions
V&% = 80 V, I( = 0
V(% = 6.0 V, I& = 0
V&( = 2.0 V, I& = 0.1 A
V&( = 2.0 V, I& = 1.0 A
V&( = 2.0 V, I& = 0.1 A
I& = 2.0 A, I% = 0.1 A
I& = 3.0 A, I% = 0.15 A
I& = 2.0 A, I% = 0.1 A
V&( = 10 V, I( = 0.3 A
V&% = 10 V, I( = 0, f = 1 MHz
I& = 1.0 A, V&&= 10 V
I% = I% = 0.1 A
R/ = 5.0
hFE CLASSIFICATION
Marking
h)(
GX
100 to 200
GY
160 to 320
GZ
200 to 400
2SD2403
MIN.
80
100
630
TYP.
200
670
150
210
0.89
130
30
150
652
40
MAX.
100
100
400
730
300
500
1.2
Unit
nA
nA
mV
mV
mV
V
MHz
pF
ns
ns
ns
2 Data Sheet D16156EJ2V0DS


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TYPICAL CHARACTERISTICS (Ta = 25°C)
2SD2403
Data Sheet D16156EJ2V0DS
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[MEMO]
2SD2403
Data Sheet D16156EJ2V0DS
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2SD2403
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4




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