IRFI620A (Fairchild Semiconductor)
Power MOSFET

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Advanced Power MOSFET
IRFW/I620A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.626 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V
RDS(on) = 0.8
ID = 5 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
200
5
3.2
18
+_ 30
67
5
4.7
5.0
3.1
47
0.38
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC Junction-to-Case --
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient --
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.65
40
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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IRFW/I620A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.24 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250µ A
V/oC ID=250µ A See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=200V
µA VDS=160V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 0.8 VGS=10V,ID=2.5A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 2.41 -- VDS=40V,ID=2.5A
O4
-- 275 360
--
55
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 25 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 11 30
VDD=100V,ID=5A,
-- 26 60 ns RG=18
See Fig 13
-- 15 40
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
-- 12 17
VDS=160V,VGS=10V,
-- 2.4
-- 6.2
--
--
nC
ID=5A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 5
-- 18
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25oC ,IS=5A,VGS=0V
-- 122 -- ns TJ=25oC,IF=5A
-- 0.51 -- µC diF/dt=100A/µ s
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=4mH, IAS=5A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD<_ 5A, di/dt <_180A/µs, V DD <_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.0
1.5 VGS = 10 V
1.0
0.5 VGS = 20 V
@ Note : TJ = 25 oC
0.0
0 3 6 9 12 15 18
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
400 Crss= Cgd
C iss
300
200 C oss
100 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFW/I620A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
1.8
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 5.0 A
0
0 3 6 9 12
QG , Total Gate Charge [nC]


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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IRFW/I620A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5 1. VGS = 10 V
2. ID = 2.5 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
102 Operation in This Area
is Limited by RDS(on)
101 100 µs
1 ms
10 ms
DC
100
10-1
10-2
100
@ Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
D=0.5
100
0.2
10- 1
0.1
0.05
0.02
0.01
10- 2
10- 5
single pulse
@ Notes :
1. Zθ J C (t)=2.65 o C/W Max.
2. Duty Factor, D=t /t
12
3. TJ M -TC =PD M *Zθ J C (t)
PDM
t1
t2
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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IRFW/I620A
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (I G) Current Sampling (I D)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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IRFW/I620A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD


IRFI620A (Fairchild Semiconductor)
Power MOSFET

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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CoolFET™
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E2CMOSTM
FACT™
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FAST®
FASTr™
GTO™
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MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
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SuperSOT™-8
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VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.




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