2SK1924 (Inchange Semiconductor)
N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID= 6A@ TC=25
·Drain Source Voltage
: VDSS= 600V(Min)
·Fast Switching Speed
isc Product Specification
2SK1924
APPLICATIONS
·Ultrahigh-speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=256 A
Ptot Total Dissipation@TC=25
70 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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2SK1924 (Inchange Semiconductor)
N-Channel MOSFET Transistor

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Click to Download PDF File for PC

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1924
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= 10V; ID=1mA
VGS= 10V; ID= 3A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 480V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=20V;
VGS=0V;
fT=1MHz
tr Rise Time
ton Turn-on Time
tf Fall Time
toff Turn-off Time
VGS=10V;
ID=4A;
VDD=200V;
RL=50Ω
MIN TYPE MAX UNIT
600 V
2.0 3.0 V
1.1 1.5 Ω
±100 nA
1 mA
1100
45 pF
150
25
18
ns
60
240
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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