2SK1809 (Inchange Semiconductor)
N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID= 5A@ TC=25
·Drain Source Voltage
: VDSS= 600V(Min)
·Fast Switching Speed
·Low on-resistance
·For switchinggregulator,DC-DC Converter
isc Product Specification
2SK1809
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=255 A
Ptot Total Dissipation@TC=25
60 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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2SK1809 (Inchange Semiconductor)
N-Channel MOSFET Transistor

No Preview Available !

Click to Download PDF File for PC

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
2SK1809
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 10mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VDF Body to drain diode forward voltage IS= 5A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 2.5A
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
Ciss Input capacitance
Crss Reverse transfer capacitance
Coss Output capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr Rise time
ton Turn-on time
tf Fall time
toff Turn-off time
VGS=10V;
ID=2.5A;
VDD=200V;
RL=12Ω
MIN TYPE MAX UNIT
600 V
±30
V
2.0 3.0 V
0.9 V
1.5 Ω
±10 μA
250 μA
1000
45 pF
250
45
12
ns
55
105
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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