CHM6031LPAPT (Chenmko Enterprise)
N-Channel Enhancement Mode Field Effect Transistor

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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM6031LPAPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 55 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small package. (TO-252A)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
CONSTRUCTION
* N-Channel Enhancement
.280 (7.10)
.238 (6.05)
.220 (5.59)
.195 (4.95)
(1) (3) (2)
TO-252A
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
CIRCUIT
D (3)
(1) G
S (2)
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation at Tc = 25 °C
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
.024 (0.61)
.016 (0.40)
Dimensions in inches and (millimeters)
TO-252A
CHM6031LPAPT
30
±20
55
140
50
-55 to 150
-55 to 150
Units
V
V
A
W
°C
°C
50 °C/W
2006-02


CHM6031LPAPT (Chenmko Enterprise)
N-Channel Enhancement Mode Field Effect Transistor

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RATING CHARACTERISTIC CURVES ( CHM6031LPAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
30 V
1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VDS =10V, ID = 26A
1 1.6 3
V
8.5 11
m
12 15
32 S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=24V, ID=48A
VGS=5V
VDD= 15V
ID =55A, VGS= 10 V
RGEN= 24
27 33
6
14
10 16
190 250
55 90
130 200
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage IS = 26A, VGS= 0 V
55
0.93 1.3
A
V




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