DHG20C600PB (IXYS)
High Performance Fast Recovery Diode

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Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
DHG 20 C 600PB
advanced
VRRM =
IFAV =
t rr =
600 V
10 A
35 ns
Part number
DHG 20 C 600PB
1 23
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: cathode
Package:
TO-220AB
Industry standard outline
Epoxy meets UL 94V-0
RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
I FSM
I RM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
600 V
600 V
10 A
20 A
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
average forward current
IF = 10 A
IF = 20 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 125 °C
TC = 85 °C
TVJ = 150 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 10 A;
-di /dt = 200 A/µs
F
VR = 400 V
VR = 300 V; f = 1 MHz
I AS = tbd A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
15
1.5
2.37
3.18
2.22
3.11
10
1.31
81.4
1.80
-55 150
70
80
4
35
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified


DHG20C600PB (IXYS)
High Performance Fast Recovery Diode

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Click to Download PDF File for PC

DHG 20 C 600PB
advanced
Symbol
IRMS
RthCH
MD
FC
T stg
Weight
Definition
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
Ratings
min. typ. max.
35
0.50
0.4 0.6
20 60
-55 150
2
Unit
A
K/W
Nm
N
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220AB
C
G
J
K
L
M
N
Q
R
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified




DHG20C600PB.pdf
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