BR806 (MDD)
SILICON BRIDGE RECTIFIERS

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BR-8
0.30(7.60)
0.25(6.35)
0.052(1.3) DIA.
0.048(1.2) TYP.
0.750 MIN.
(19.1)
BR8005 THRU BR810
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,at 5 lbs. (2.3kg) tension
0.770(19.6)
0.730(18.5)
0.52(13.2)
0.48(12.2)
HOLE FOR
NO.6 SCREW
AC 0.52(13.2) 0.770(19.6)
0.48(12.2) 0.730(18.5)
AC
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting:Thru hole for #6 serew,5in.-lbs. torque max.
Weight:0.20o unce, 5.62 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS BR8005 BR801 BR802 BR804 BR806
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600
Maximum RMS voltage
VRMS
35
70 140 280 420
Maximum DC blocking voltage
VDC 50 100 200 400 600
Maximum average
forward output
TC=50 C (Note 1)
TC=100 C (Note 1) I(AV)
8.0
6.0
rectified current at
TA=50 C (Note 2)
6.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
125.0
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
I2t
64
Maximum instantaneous forward voltage drop
per bridge element at 4.0A
VF
1.1
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
10
1.0
Isolation voltage from case to leads
VISO
2500
Typical Thermal Resistance (Note 1)
RθJA
6.0
Operating junction temperature range
TJ
-55 to +125
storage temperature range TSTG -55 to +150
NOTES:
1.Unit mounted on 8.7x 8.7x0.24thick(22x22x0.6cm)Al.plate.
2.Unit mounted on P.C. board with 0.47x 0.47(12x12mm) copper pads,0.375
BR808 BR810 UNITS
800 1000 VOLTS
560 700 VOLTS
800 1000 VOLTS
Amps
Amps
A2s
Volts
µA
mA
VAC
C/W
C
C
MDD ELECTRONIC


BR806 (MDD)
SILICON BRIDGE RECTIFIERS

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Click to Download PDF File for PC

RATINGS AND CHARACTERISTIC CURVES BR8005 THRU BR810
FIG. 1- FORWARD CURRENT DERATING CURVE
10
8 Single Phase
Half Wave 60Hz
Resistive or
inductive Load
6
4
2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
TJ=25 C
0.1 PULSE WIDTH=300 µs
1%DUTY CYCLE
0.01
0.6 0.8 1.0 1.2 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
125
100
75
50
25 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
TJ=100 C
10
1
0.1 TJ=25 C
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
10
1
10
TJ=25 C
1
0.1
1.0
10 100
REVERSE VOLTAGE,VOLTS
0.1
0.01
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
MDD ELECTRONIC




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